Microstructure and Thermoelectric Properties of Dense YB<Subscript>22</Subscript>C<Subscript>2</Subscript>N Samples Fabricated Through Spark Plasma Sintering

Dense samples of the higher boride YB₂₂C₂N have been fabricated through the spark plasma sintering (SPS) method with different sintering aids. YB₂₂C₂N is a representative of a series of newly discovered rare-earth borocarbonitrides, which may be the long-awaited n-type counterpart of boron carbide, “B₄C.” The effect of Si, SiC, Al, and TiC additions on the sintering process of YB₂₂C₂N has been studied. The best sintered bodies with densities higher than 90% of theoretical density were obtained by means of SPS at 1700°C. We show that the additive choice and pressure have an effect on grain size and density. An investigation of the effect of atmosphere on the sintering behavior has also been carried out. It was found that sinterability is enhanced under nitrogen atmosphere. Thermoelectric properties of the materials sintered with additives have been evaluated, and we discuss their dependences on the fabrication process route.     

The effect of roll-processing orientation on stress corrosion cracking of warm-rolled 304L stainless steel in oxygenated and deoxygenated high temperature pure water

Stress corrosion crack growth rates of 304L stainless steel after one-directionally warm-rolled along the longitudinal (L) direction were measured in oxygenated and deoxygenated pure water at 288 °C. The fracture mode is mainly intergranular in the Transverse-longitudinal (T-L) orientation specimen, while it is occasionally intergranular in the Longitudinal-transverse (L-T) orientation specimen. The crack growth rates in the T-L orientation are higher than those in the L-T orientation in both oxygenated and deoxygenated environments, which is related to the effective cracking growth path as the result of microstructural anisotropy and applied loading direction.     

Class DE current-source parallel resonant inverter

This paper introduces a Class DE current-source parallel resonant inverter, along with its design procedure and experimental results. This circuit offers several desirable features. First, the proposed circuit lacks harmonic components of input current over the voltage-source inverters. Second, the source pin of the MOSFET is directly connected to the ground, so that it is not necessary to use a complicated gate-drive circuit. Third, by maintaining zero-current switching, power loss by the parasitic inductor at turn-off decreases. The measured efficiency is over 90% at the output power of 3.5 W and the operating frequency of 0.5 MHz     

In situ HREM study on the structural instability of isolated nanometre-sized alloy particles in the Sn-Bi system

The structural instability of isolated nm-sized alloy particles has been investigated by in situ transmission electron microscopy, using particles in the Sn-Bi system. In a pure tin (Sn) particle, no structural fluctuation was induced under electron-beam irradiation. In a tin-rich solid solution particle, an orientational fluctuation took place at a rate of approximately once per 1-3 s. In a high concentration alloy particle with a two-phase microstructure, a structural fluctuation occurred at a rate of a few hertz. Namely, the fluctuation became more frequent with increasing bismuth (Bi) concentration, no matter whether it consists of a single phase or multiple phases. A good parallelism can be found between this fluctuation enhancement with bismuth concentration and the fact that the free-energy difference between a solid particle and the corresponding liquid one decreases continuously with bismuth concentration and approaches a value close to zero at the eutectic composition. These results lead to a view that a nm-sized solid particle exhibits a structural instability under electron-beam irradiation when the free-energy difference between a solid particle and the corresponding liquid one is reduced to a value close to zero.     

Analysis of class D inverter with irregular driving patterns

This paper presents an analysis of Class D inverter when irregular driving patterns are given to the gate drive of the switch devices. The analysis has been carried out with focusing on the waveforms, harmonics, low-frequency components, output power, and equivalent dc resistance, which are numerically analyzed and discussed. Class D inverters with six different Q factors from 0.1 to 20 are analyzed about 2/sup 16/ driving patterns for each Q. Superior four models of the six inverters are built and tested in circuit experiments. The calculated waveforms are compared to the experimental results. Both of them are agreed well in time domain and frequency domain. Analytical results show a possibility of a novel control method with irregular driving patterns. In spite of discontinuous control, the output power or voltage can be strictly changed as if continuous using the selected driving patterns in some ranges.     

Lithium Ion Secondary Cell Prepared by a Printing Procedure,and Its Application to All-Solid-State Inorganic Lithium Ion Cells

We have developed a straightforward printing method for preparation of a lithium secondary cell. LiCo_1/3Ni_1/3Mn_1/3O₂ and Li₄Ti₅O₁₂ viscous printable pastes were used for the cathode and anode, respectively. Electrochemical measurement was used to characterize the capacitance of each cell, and field-emission scanning electron microscopy and particle size measurements were used to characterize particle size and morphology. These film electrodes functioned stably both in a standard liquid electrolyte and in an Li₂SiO₃ solid electrolyte, although the capacitance of the all-solid-state cell was significantly lower than that of the cell containing liquid electrolyte. When liquid electrolyte was used, the capacity decreased by 36% after 50 cycles. However, the capacity of 0.2 mA h/g remained almost the same even after 50 charge–discharge cycles, demonstrating the stability and strength of the all-solid-state lithium ion cell. It was also found that the cell resistance mostly arose from the electrode/electrolyte interface and not from the bulk electrolyte. Addition of a sol–gel to the solid electrolyte printable paste improved cell performance.     

Two-dimensional GaAs photonic switch array with direct gain andhigh contrast

The fabrication and design of a 4×4 surface-normal reflection photonic switch array, with an operating principle based on the change of the gain coefficient in GaAs, is described. A 3-μm-thick GaAs active layer and carrier confinement layers are sandwiched between a semiconductor multilayer reflector and an antireflection window. The beryllium ion implantation technique is used to make a narrow current path to reduce the operation current. Each photonic switch independently realizes direct amplification and absorption of the optical signal. It features an optical gain of 4 dB and a contrast of 9.6 dB, for an applied voltage of 2.2 V. The array has a simple planar structure     

Historical review of OCR research and development

Research and development of OCR systems are considered from a historical point of view. The historical development of commercial systems is included. Both template matching and structure analysis approaches to R&D are considered. It is noted that the two approaches are coming closer and tending to merge. Commercial products are divided into three generations, for each of which some representative OCR systems are chosen and described in some detail. Some comments are made on recent techniques applied to OCR, such as expert systems and neural networks, and some open problems are indicated. The authors' views and hopes regarding future trends are presented     

Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate

We investigated the possibility of forming a step-free quantum well structure. A step-free InAs monolayer was grown on a selectively grown mesa by controlling surface phases with in-situ monitoring of surface photo-absorption. We selectively grew a GaAs buffer at 800°C and cooled the sample keeping the (2×2)-like As stabilized surface. Atomic force microscopy (AFM) observation demonstrated that fully step-free surfaces were formed on the 8 μm wide mesa. Then, a monolayer-thick InAs was formed on this step-free surface and this InAs layer was capped by GaAs under the (2×2)-like condition. The quantum level of the step-free InAs layer was evaluated by spatially resolved photoluminescence (μPL) measurement. Uniform PL intensity and the lack of a double layer peak indicated the formation of a step-free InAs quantum well, which was in good agreement with AFM observation.     

Three replacement models with two kinds of damage

This paper proposes three replacement policies for a modified cumulative damage model. An item receives shocks and suffers two kinds of damage: one is produced by shocks and the other increases with time at constant rate a. It fails only when the total damage exceeds a failure level K at some shock and is replaced before failure at time T, at shock N, or at damage k. The expected cost rates of three replacement policies are obtained. When shocks occur in a Poisson process, optimal T^*, N^* and k^* which minimize them are computed numerically. Finally, two extended cases where a is a function of time and K is a random variable are also considered.