Refractory objects and materials for continuous steel casting

In the OAO Borovich Refractory Combine production has been assimilated for a complete set of refractories for continuous steel casting, i.e. from a pipe for protecting a stream of metal to a submerged nozzle. In technical and life characteristics the products correspond to that of world analogs, they provide accident free steel pouring, make it possible to reduce the specific consumption of refractories per ton of steel, to increase CBCM productivity, to reduce billet scrap, and to reduce steel cost. Translated from Novye Ogneupory, No. 8, pp. 4–9, August 2008.     

Formation of the complex oxide NaNdTiO<Subscript>4</Subscript>

The processes of phase formation in the Na₂CO₃-TiO₂ and Na₂CO₃-TiO₂-Nd₂O₃ systems are investigated in the temperature range 600–900°C. The high-temperature solid-phase reactions underlying the process of formation of complex oxide NaNdTiO4 are studied. It is established that the synthesis of the NaNdTiO₄ compound occurs through the reaction of the intermediate product Na₈Ti₅O₁₄ with neodymium oxide in the temperature range 720–780°C. The optimum method is proposed for synthesizing NaNdTiO₄, which makes it possible to reduce the temperature of the synthesis, to avoid the formation of impurities, and to obtain the product in a finely dispersed state.     

Aggregate stability of ZrO2 aqueous sols in electrolyte solutions

The aggregate stability of submicron and nanosized ZrO₂ aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10^?3–10^?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO₂ particles is estimated.     

Tellurium clusters in channels of the porous silica ZSM-11

The distribution and structure of tellurium nanoclusters synthesized in crystal channels of the porous silica ZSM-11 are investigated using the maximum-entropy method and the Rietveld analysis. It is shown that the intercalated tellurium atoms are arranged in channels of the ZSM-11 zeolite not randomly but in the form of scraps of infinite chains similar to those observed in massive tellurium. The distances between the nearest neighbor tellurium atoms vary in the range 2.53(4)–2.70(3) ?. The clusters Te₄ are formed at the intersections of channels in the structure. These clusters have the form of distorted tetrahedra in which the tellurium atoms are separated by distances of 2.53(4) and 2.90(4) ?. Original Russian Text ? A.E. Lapshin, Yu.F. Shepelev, Yu.I. Smolin, E.A. Vasil’eva, 2008, published in Fizika i Khimiya Stekla.     

二维多波束蜂窝网覆盖方法研究

提出一种基于二维多波束形成的蜂窝网覆盖方法,该方法旨在通过对平面阵阵元权矢量的控制,使所形成的波束在空域上呈非均匀蜂窝网结构,达到重点地区覆盖密度高,非重点区域覆盖密度低的目的,减小资源利用率,并重点分析了波束设计思路和权值的计算方法,仿真结果表明:该覆盖方法是有效的.     

建筑电气设计中AutoCAD二次开发的研究

基于AutoCAD的二次开发环境下,建立幻灯片库,在AutoCAD本身所包含的程序帮助下,将已建好的幻灯片库嵌入到AutoCAD用户专用下拉菜单中.给设计者创造属于自己的开发环境,使AutoCAD在建筑电气设计中的使用更加灵活,极大的提高设计效率.     

例谈概率论与微积分的联系及相互间的应用

通过一些实例的解答,讨论了微积分与概率论2门学科之间解题方法的相互应用,进而反映了概率论与微积分之间的联系和微积分在概率论发展过程中对概率论的渗透与推动,并得到了求解形如∫-＋∞∞f（x）e-g（x）dx（其中f（x）=ax^2＋bx＋c,g（x）=ix^2＋jx＋k）的公式.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.