The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned,ion-damaged GaAs

As shown previously, the misfit dislocation density of strained epitaxial III–V layers can be significantly reduced by isolating sections (via patterned etching) of a GaAs substrate before epitaxial growth. A disadvantage of this technique is that the wafer surface is no longer planar, which can complicate subsequent device fabrication. As an alternative, we have investigated growth of 350 nm of In_0.5Ga{0.95}As by molecular beam epitaxy at two temperatures on substrates which were patterned and selectively damaged by Xe ion implantation (300 keV, 10¹⁵ cm²). Selectively etched substrates were prepared as reference samples as well. The propagation of the misfit dislocations was stopped by the ion-implanted regions of the low growth temperature (400° C) material, but the damaged portions also acted as copious nucleation sources. The resulting dislocation structure was highly anisotropic, with dislocation lines occurring in virtually only one direction. At the higher growth temperature (500° C) the defect density fell, but the ion damaged sections no longer blocked dislocation glide. Images from cathodoluminescence and transmission electron microscopy show thatthe low growth temperature material has a dislocation density of 70,000 cm^-1 in the 110 direction and less than 10,000 cm^-1 in the 110 direction. Ion channeling and x-ray diffraction show that strain is relieved in only one direction. The strain relief is consistent with the relief derived from TEM dislocation counts and Burgers vector determination. However, even this high dislocation count is not sufficient to reach the expected equilibrium strain. Reasons for the anisotropy are discussed.     

Globally optimal transmitter placement for indoor wireless communication systems

A global optimization technique is applied to solve the optimal transmitter placement problem for indoor wireless systems. An efficient pattern search algorithm - DIviding RECTangles (DIRECT) of Jones et al.- has been connected to a parallel three-dimensional radio propagation ray tracing modeler running on a 200-node Beowulf cluster of Linux workstations. Surrogate functions for a parallel wideband code-division multiple-access (WCDMA) simulator were used to estimate the system performance for the global optimization algorithm. Power coverage and bit-error rate are considered as two different criteria for optimizing locations of a specified number of transmitters across the feasible region of the design space. This paper briefly describes the underlying radio propagation and WCDMA simulations and focuses on the design issues of the optimization loop.     

Information systems leadership

Information system (IS) leadership is a critical area for many organizations because of their increasing dependence on ISs both for operational stability and for enablement of process innovation and business strategy. IS Leadership is distinctive from leadership in general because the Chief Information Officer (CIO) is expected to combine IS technical skills with an in-depth understanding of the organization across all functions from operational to strategic. Thus, unique leadership challenges arise due to the technology/business interface. The breadth of the IS Leadership role implies that IS Leadership research needs to cover a wide range of topics concerning the role and characteristics of the CIO, the CIO's interface with the top management team, and the CIO's organizational impact. This essay discusses the distinctive aspects of IS Leadership, identifies the dominant themes in prior IS Leadership research,and introduces five papers on IS Leadership in this issue.     

Diversity improvement estimation from rain Radar databases using maximum likelihood estimation

This research examines route diversity as a fade mitigation technique in the presence of rain, for terrestrial microwave links. The improvement in availability due to diversity depends upon the complex spatio-temporal properties of rainfall. To produce a general model to predict the advantage due to route diversity it is necessary to be able to predict the correlation of rain attenuation on arbitrary pairs of microwave links. This is achieved by examination of a database of radar derived rain rate fields. Given a representative sample of rain field images, the joint rain attenuation statistics of arbitrary configurations of terrestrial links can be estimated. Existing rain field databases often yield very small numbers of high joint attenuation events. Consequently, estimates of the probability of joint high attenuation events derived from ratios of the number of occurrences can be highly inaccurate. This paper assumes that pairs of terrestrial microwave links have joint rain attenuation distributions that are bi-lognormally distributed. Four of the five distribution parameters can be estimated from ITU-R models. A maximum likelihood estimation (MLE) method is used to estimate the fifth parameter, i.e., the covariance or correlation. The predicted diversity statistics vary smoothly and yield plausible extrapolations into low probability situations.     

Low thermal resistance high-speed top-emitting 980-nm VCSELs

Increasing copper plated heatsink radii from 0 to 4 /spl mu/m greater than the mesa in vertical-cavity surface-emitting lasers (VCSELs) reduced the measured thermal resistance for a range of device sizes to values 50% lower than previously reported over a range of device sizes. For a 9-/spl mu/m diameter oxide aperture, the larger heatsink increases output power and bandwidth by 131% and 40%, respectively. The lasers exhibit a 3-dB modulation frequency bandwidth up to 9.8 GHz at 10.5 kA/cm/sup 2/. The functional dependence of thermal resistance on oxide aperture diameter indicates the importance of lateral heat flow to mesa sidewalls.     

A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.     

Electrical characterization of poly(amide-imide) for application in organic field effect devices

The admittance spectra and current–voltage (I–V) characteristics are reported of metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) capacitors employing cross-linked poly(amide–imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan δ values as low as 7 × 10⁻³ over most of the range. Except at the lowest voltages, the I–V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell–Wagner frequency response from which the transverse bulk hole mobility was estimated to be ∼2 × 10⁻⁵ cm² V⁻¹s⁻¹ or ∼5 × 10⁻⁸ cm² V⁻¹s⁻¹ depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be ∼5 × 10¹⁰ cm⁻² eV⁻¹ or ∼9 × 10¹⁰ cm⁻² eV⁻¹ again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices.