Saturation intensity and time response of InGaAs-InGaP MQW opticalmodulators

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7±0.1) kW/cm² for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations     

The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned,ion-damaged GaAs

As shown previously, the misfit dislocation density of strained epitaxial III–V layers can be significantly reduced by isolating sections (via patterned etching) of a GaAs substrate before epitaxial growth. A disadvantage of this technique is that the wafer surface is no longer planar, which can complicate subsequent device fabrication. As an alternative, we have investigated growth of 350 nm of In_0.5Ga{0.95}As by molecular beam epitaxy at two temperatures on substrates which were patterned and selectively damaged by Xe ion implantation (300 keV, 10¹⁵ cm²). Selectively etched substrates were prepared as reference samples as well. The propagation of the misfit dislocations was stopped by the ion-implanted regions of the low growth temperature (400° C) material, but the damaged portions also acted as copious nucleation sources. The resulting dislocation structure was highly anisotropic, with dislocation lines occurring in virtually only one direction. At the higher growth temperature (500° C) the defect density fell, but the ion damaged sections no longer blocked dislocation glide. Images from cathodoluminescence and transmission electron microscopy show thatthe low growth temperature material has a dislocation density of 70,000 cm^-1 in the 110 direction and less than 10,000 cm^-1 in the 110 direction. Ion channeling and x-ray diffraction show that strain is relieved in only one direction. The strain relief is consistent with the relief derived from TEM dislocation counts and Burgers vector determination. However, even this high dislocation count is not sufficient to reach the expected equilibrium strain. Reasons for the anisotropy are discussed.     

用于平板显示制造中的真空设备——BOC Edwards特有的模块组合系统

在过去的10年内,平板显示业(FPD)迅猛发展,以满足对高品质的显示设备,如显示器,电视机,手机和掌上电脑(PDA)等的需求。显示行业研究机构的最新统计表明:显示器的销售由2003年的440亿美元增至2006年的730亿美元,预计2009年将达到900亿美元。而产能的扩张更令人惊讶:以每年42%的增长率,从2005年的39000m2玻璃到2009年预计的121000m2。为了使平板显示器能更普遍地使用,降低生产成本是关键。FPD行业已经通过增加玻璃尺寸非常成功地降低了每块面板的成本。这个增长比率每年都在递增,从2000年的0.35m(23代)到2006年的4.4m(27代),6年内翻了10番…     

Solution Processing Route to Multifunctional Titania Thin Films: Highly Conductive and Photcatalytically Active Nb:TiO2

This paper reports the synthesis of highly conductive niobium doped titanium dioxide (Nb:TiO₂) films from the decomposition of Ti(OEt)₄ with dopant quantities of Nb(OEt)₅ by aerosol‐assisted chemical vapor deposition (AACVD). Doping Nb into the Ti sites results in n‐type conductivity, as determined by Hall effect measurements. The doped films display significantly improved electrical properties compared to pristine TiO₂ films. For 5 at.% Nb in the films, the charge carrier concentration was 2 × 10²¹ cm^?3 with a mobility of 2 cm² V^–1 s^–1 . The corresponding sheet resistance is as low as 6.5 Ω sq^–1 making the films suitable candidates for transparent conducting oxide (TCO) materials. This is, to the best of our knowledge, the lowest reported sheet resistance for Nb:TiO₂ films synthesized by vapour deposition. The doped films are also blue in colour, with the intensity dependent on the Nb concentration in the films. A combination of synchrotron, laboratory and theoretical techniques confirmed niobium doping into the anatase TiO₂ lattice. Computational methods also confirmed experimental results of both delocalized (Ti⁴⁺) and localized polaronic states (Ti³⁺) states. Additionally, the doped films also functioned as photocatalysts. Thus, Nb:TiO₂ combines four functional properties (photocatalysis, electrical conductivity, optical transparency and blue colouration) within the same layer, making it a promising alternative to conventional TCO materials.     

Photon-assisted capacitance–voltage study of organic metal–insulator–semiconductor capacitors

The results are reported of a detailed investigation into the photoinduced changes that occur in the capacitance–voltage (C–V) response of an organic metal–insulator–semiconductor (MIS) capacitor based on the organic semiconductor poly(3-hexylthiophene), P3HT. During the forward voltage sweep, the device is driven into deep depletion but stabilizes at a voltage-independent minimum capacitance, C_min, whose value depends on photon energy, light intensity and voltage ramp rate. On reversing the voltage sweep, strong hysteresis is observed owing to a positive shift in the flatband voltage, V_FB, of the device. A theoretical quasi-static model is developed in which it is assumed that electrons photogenerated in the semiconductor depletion region escape geminate recombination following the Onsager model. These electrons then drift to the P3HT/insulator interface where they become deeply trapped thus effecting a positive shift in V_FB. By choosing appropriate values for the only disposable parameter in the model, an excellent fit is obtained to the experimental C_min, from which we extract values for the zero-field quantum yield of photoelectrons in P3HT that are of similar magnitude, 10^?5 to 10^?3, to those previously deduced for π-conjugated polymers from photoconduction measurements. From the observed hysteresis we deduce that the interfacial electron trap density probably exceeds 10¹⁶ m^?2. Evidence is presented suggesting that the ratio of free to trapped electrons at the interface depends on the insulator used for fabricating the device.     

A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.     

Low thermal resistance high-speed top-emitting 980-nm VCSELs

Increasing copper plated heatsink radii from 0 to 4 /spl mu/m greater than the mesa in vertical-cavity surface-emitting lasers (VCSELs) reduced the measured thermal resistance for a range of device sizes to values 50% lower than previously reported over a range of device sizes. For a 9-/spl mu/m diameter oxide aperture, the larger heatsink increases output power and bandwidth by 131% and 40%, respectively. The lasers exhibit a 3-dB modulation frequency bandwidth up to 9.8 GHz at 10.5 kA/cm/sup 2/. The functional dependence of thermal resistance on oxide aperture diameter indicates the importance of lateral heat flow to mesa sidewalls.     

Optical properties of highly scattering media determined from changes in attenuation, phase, and modulation depth

The optical properties of scattering media determine the attenuation (A) and the transit time (?t?) of light reflected from the medium as well as the phase (?) and modulation depth (M) of an intensity-modulated lightwave. Our primary finding is that the ratio of changes in A, ?, and M is approximately independent of the scattering properties and gives a good estimate of the absorption coefficient. These changes can be induced either by small changes in the absorption coefficient of the medium, by the tuning of the wavelength, or by changes in the light source-detector distance. The application for the in vivo monitoring of hemoglobin and oxyhemoglobin concentrations in human tissue is discussed.     

Role of Tyrosine Kinase Syk in Thrombus Stabilisation at High Shear

Understanding the pathways involved in the formation and stability of the core and shell regions of a platelet-rich arterial thrombus may result in new ways to treat arterial thrombosis. The distinguishing feature between these two regions is the absence of fibrin in the shell which indicates that in vitro flow-based assays over thrombogenic surfaces, in the absence of coagulation, can be used to resemble this region. In this study, we have investigated the contribution of Syk tyrosine kinase in the stability of platelet aggregates (or thrombi) formed on collagen or atherosclerotic plaque homogenate at arterial shear (1000 s⁻¹). We show that post-perfusion of the Syk inhibitor PRT-060318 over preformed thrombi on both surfaces enhances thrombus breakdown and platelet detachment. The resulting loss of thrombus stability led to a reduction in thrombus contractile score which could be detected as early as 3 min after perfusion of the Syk inhibitor. A similar loss of thrombus stability was observed with ticagrelor and indomethacin, inhibitors of platelet adenosine diphosphate (ADP) receptor and thromboxane A₂ (TxA₂), respectively, and in the presence of the Src inhibitor, dasatinib. In contrast, the Btk inhibitor, ibrutinib, causes only a minor decrease in thrombus contractile score. Weak thrombus breakdown is also seen with the blocking GPVI nanobody, Nb21, which indicates, at best, a minor contribution of collagen to the stability of the platelet aggregate. These results show that Syk regulates thrombus stability in the absence of fibrin in human platelets under flow and provide evidence that this involves pathways additional to activation of GPVI by collagen.     

Individual Differences in Susceptibility to False Memory in the Deese-Roediger-McDermott Paradigm.

The authors addressed whether individual differences in the working memory capacity (WMC) of young adults influence susceptibility to false memories for nonpresented critical words in the Deese-Roediger-McDermott associative list paradigm. The results of 2 experiments indicated that individuals with greater WMC recalled fewer critical words than individuals with reduced WMC when participants were forewarned about the tendency of associative lists (e.g., bed, rest, . . .) to elicit illusory memories for critical words (e.g., sleep). In contrast, both high and low WMC participants used repeated study-test trials to reduce recall of critical words. These findings suggest that individual differences in WMC influence cognitive control and the ability to actively maintain task goals in the face of interfering information or habit. (PsycINFO Database Record (c) 2010 APA, all rights reserved)