Transmission capacity of optical path overhead transfer schemeusing pilot tone for optical path network

Photonic networks based on the optical path concept and wavelength division multiplexing (WDM) technology require unique operation, administration, and maintenance (OAM) functions. In order to realize the required OAM functions, the optical path network must support an effective management information transfer method. The method that superimposes a pilot tone on the optical signal appears very interesting for optical path overhead transfer. The pilot tone transmission capacity is determined by the carrier to noise ratio which depends on the power spectral density of the optical signal. The pilot tone transmission capacity of an optical path network employing WDM technology is elucidated; 4.5 kb/s transmission can be realized when the pilot tone modulation index is set at 3%     

An improved Gaussian approximation for probability of bit-erroranalysis of asynchronous bandlimited DS-CDMA systems with BPSK spreading

This paper analyzes probability of bit-error (P_e) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of P_e analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low P_e (< 10^-3) or a prohibitively large computational complexity. The paper presents an alternate method of P_e analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P _e performance, user capacity and the accuracy of the proposed method     

The Solutions for Adjustment and Reconstruction of Water-Drive Surface Systems in the Old Areas of Daqing Oilfield

Introduction 　　Owing to long-time running, more facilities including stations, pipelines, vessels have become corrosive and aged ,some process has grown old, it has exert more burden for the maintenance and repair.Simultaneously, the fluid production rate, oil production rate and water injection rate has changed greatly so that the inflicts and problems from the established surface systems will become more obvious. Energy cost of production and running has increasing continuously. Capacity has been unbalance in systems and areas. 　　……     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

Three ways to implement interfacial techniques: application tomeasurements of chromatic dispersion, birefringence, and nonlinearsusceptibilities

Depending on the spectal width of the source illuminating an interferometer, measurement procedures can utilize either the whole interferogram, or only the fringe envelope, or only the fringe quick oscillations. With an ultraband spectrum source, a simplified adaptation of the methods of Fourier transform spectroscopy yields the variations of the test-fiber propagation constant over the whole wavelength-interval of the source. Chromatic dispersion can then be computed from a single interferogram. With narrower spectrum sources, only the fringe envelopes are utilized and yield measurements of mode delay, with application to chromatic and polarization mode dispersion. In this case, however, interferograms at several wavelengths are necessary. With even narrower spectrum sources, the fringe quick oscillations provide measurements of phase shifts, related to changes in the mode propagation constant, when outside perturbations are applied to the test fiber. A direct method for measuring the third-order nonlinear susceptibilities is discussed. In this case the outside perturbation is an intense pump laser field     

A Note on PIN Polynomials and PRIN Rational Functions

This brief presents a necessary and sufficient condition for testing positive, real, imaginary, and negative rational functions. A related term, the positive, imaginary, and negative polynomial, is defined and two necessary and sufficient conditions for testing it are given.     

Cooling and Solidification of Melted Drops in an Immiscible Cooling Medium

The cooling and solidification of melted drops during their movement in an immiscible cooling medium is widely employed for granulation in the chemical industry, and a study of these processes to provides a basis for the design of the granulation tower height and the temperature of the cooling medium is reported. A physical model of the cooling and solidification of the drop is established and the numerical calculation is performed. The influences of the key factors in the solidification, i.e., Bi number, drop diameter, temperature of the cooling medium, etc. are presented. The cooling and solidification during wax granulation in a water‐cooling tower and during urea granulation in an air‐cooling tower (spraying tower) are described in detail. Characteristics of the solidification and temperature distribution within the particle at different times are shown. The model and calculations can be used for structure design of the granulation tower and optimization of the operation parameters.