首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   748302篇
  免费   8406篇
  国内免费   2199篇
电工技术   13594篇
综合类   956篇
化学工业   115662篇
金属工艺   30138篇
机械仪表   23448篇
建筑科学   17138篇
矿业工程   5085篇
能源动力   19390篇
轻工业   60449篇
水利工程   8848篇
石油天然气   17929篇
武器工业   76篇
无线电   81830篇
一般工业技术   151529篇
冶金工业   131792篇
原子能技术   18519篇
自动化技术   62524篇
  2021年   6779篇
  2019年   6441篇
  2018年   11135篇
  2017年   11366篇
  2016年   11905篇
  2015年   7571篇
  2014年   12801篇
  2013年   34119篇
  2012年   19963篇
  2011年   27154篇
  2010年   21676篇
  2009年   24381篇
  2008年   24752篇
  2007年   24473篇
  2006年   21172篇
  2005年   19376篇
  2004年   18799篇
  2003年   18329篇
  2002年   17714篇
  2001年   17297篇
  2000年   16474篇
  1999年   16636篇
  1998年   39155篇
  1997年   28305篇
  1996年   21918篇
  1995年   16888篇
  1994年   15117篇
  1993年   14934篇
  1992年   11345篇
  1991年   11003篇
  1990年   10736篇
  1989年   10486篇
  1988年   9981篇
  1987年   9038篇
  1986年   8861篇
  1985年   9934篇
  1984年   9061篇
  1983年   8582篇
  1982年   7798篇
  1981年   7913篇
  1980年   7644篇
  1979年   7575篇
  1978年   7526篇
  1977年   8292篇
  1976年   10542篇
  1975年   6661篇
  1974年   6400篇
  1973年   6474篇
  1972年   5519篇
  1971年   5071篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
31.
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.  相似文献   
32.
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal.  相似文献   
33.
We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.  相似文献   
34.
Epoxy novolac/anhydride cure kinetics has been studied by differential scanning calorimetry under isothermal conditions. The system used in this study was an epoxy novolac resin (DEN431), with nadic methyl anhydride as hardener and benzyldimethylamine as accelerator. Kinetic parameters including the reaction order, activation energy and kinetic rate constants, were investigated. The cure reaction was described with the catalyst concentration, and a normalized kinetic model developed for it. It is shown that the cure reaction is dependent on the cure temperature and catalyst concentration, and that it proceeds through an autocatalytic kinetic mechanism. The curing kinetic constants and the cure activation energies were obtained using the Arrhenius kinetic model. A suggested kinetic model with a diffusion term was successfully used to describe and predict the cure kinetics of epoxy novolac resin compositions as a function of the catalyst content and temperature. Copyright © 2003 Society of Chemical Industry  相似文献   
35.
A set of poly[N‐oligo(ethylene oxide)yl 4‐vinylpyridinium tosylate] (P4VOEOOTs) has been prepared by spontaneous polymerization of 4‐vinylpyridine. This method gives a grafted polyelectrolyte having a positive charge on every backbone pyridinic moiety. The P4VP15Ts, P4VP164Ts, P4VP350Ts and P4VP750Ts aqueous solution conductivities were determined in the concentration range from 6 × 10?4 to 10?2 M at 25 °C. The variation of the conductivity versus concentration of the investigated system exhibits typical polyelectrolyte behaviour. The polyelectrolyte mobility was found to be dependent on the oligo(ethylene oxide) (OEO) side‐chain length. Manning's rod‐like model fails to describe these results. A simple steric effect is proposed to explain the influence of the OEO length. Copyright © 2003 Society of Chemical Industry  相似文献   
36.
The activation of safety valves causes the development of flow reaction forces that have to be transferred in an adequate way via the piping to the steel structure or via the connected vessel into the foundation. If the safety valve outlet piping is connected to a blowdown system or, in case of blowing off into the atmosphere, are equipped with a T‐piece at the outlet, the stationary reaction forces are compensated completely. The transient opening process, however, develops flow reaction forces which culminate in peaks of short duration. In this article, a simple method will be proposed for the estimation of the resulting reaction forces as a function of the length of the pipe at the safety valve outlet. CFD calculations and blowdown tests executed with a full‐lift safety valve have confirmed this method on principle. Special importance is attributed to the short duration of the effect of the reaction forces which seems to have only a negligible impact on the supporting steel structure.  相似文献   
37.
The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 105. The instruments developed cover the ranges 103, 104, and 105 Pa.  相似文献   
38.
39.
Chloride doped polyaniline conducting polymer films have been prepared in a protic acid medium (HCl) by potentiodynamic method in an electrochemical cell and studied by cyclic voltammetry and FTIR techniques. The FTIR spectra confirmed Cl- ion doping in the polymers. The polymerization rate was found to increase with increasing concentration of aniline monomer. But the films obtained at high monomer concentration were rough having a nonuniform flaky polyaniline distribution. Results showed that the polymerization rate did not increase beyond a critical HCl concentration. Cyclic voltammetry suggested that, the oxidation-reduction current increased with an increase in scan rate and that the undoped polyaniline films were not hygroscopic whereas chloride doped polyaniline films were found to be highly hygroscopic.  相似文献   
40.
A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号