On a bounded solution to a pair of coupled nonlinear ordinary differential equations

We present a bounded, decaying solution to a pair of coupled, nonlinear second-order ordinary differential equations arising in the theory of natural convection. The solution is found by transforming the problem into a non-autonomous system in the phase-plane. A uniqueness proof is given for the bounded solution.     

Isothermal detonation and its stochastic modeling

An isothermal model describing detonation under confined conditions, for example, in a porous medium; in a reasonable approximation is presented. It is shown that such a detonation can be analyzed qualitatively by the stochastic method of cellular automata.Lavrent'ev Institute of Hydrodynamics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk. Translated from Fizika Goreniya i Vzryva, Vol. 30, No. 3, pp. 112–124, May–June, 1994.     

Calculation of threshold and critical characteristics of ferritic-pearlitic steels

Translated from Fiziko-Khimicheskaya Mekhanika Materialov, Vol. 27, No. 4, pp. 77–81, July–August, 1991.     

Landsat-7 ETM+ on-orbit reflective-band radiometric stability and absolute calibration

Launched in April 1999, the Landsat-7 Enhanced Thematic Mapper Plus (ETM+) instrument is in its sixth year of operation. The ETM+ instrument has been the most stable of any of the Landsat instruments. To date, the best onboard calibration source for the reflective bands has been the Full Aperture Solar Calibrator, a solar-diffuser-based system, which has indicated changes of between 1% to 2% per year in the ETM+ gain for bands 1-4 and 8 and less than 0.5%/year for bands 5 and 7. However, most of this change is believed to be caused by changes in the solar diffuser panel, as opposed to a change in the instrument's gain. This belief is based partially on vicarious calibrations and observations of "invariant sites", hyperarid sites of the Sahara and Arabia. Weighted average slopes determined from these datasets suggest changes of 0.0% to 0.4% per year for bands 1-4 and 8 and 0.4% to 0.5% per year for bands 5 and 7. Absolute calibration of the reflective bands of the ETM+ is consistent with vicarious observations and other sensors generally at the 5% level, though there appear to be some systematic differences.     

A reliable and manufacturable method to induce a stress of >1 GPa on a P-channel MOSFET in high volume manufacturing

This letter discusses a reliable and manufacturable integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond 1 mA//spl mu/m at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film.     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Multispectral land sensing: where from, where to?

This work begins with some brief historical comments to set the stage for a discussion of the long-term potential for land remote sensing technology. This is followed by comments about what is needed to accelerate the achievement of this potential. The discussion is concluded with what concomitant development is needed with regard to a hyperspectral data analysis system.