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11.
Because of heat amount is different from peripheral to central of friction welding interface, which is leaded to vary the characterizations along that interface. Current study, respectively, focused on the effect of different friction pressure on micro-structural and mechanical properties of that friction welding joint interface. Presently, these friction pressures are 110, 130, 150 and 170 MPa while kept all other conditions constant. The effects of different friction pressure on welding interface characterization were investigated by EDX, SEM, tensile, compression, impact and hardness tests. The tensile tests carried out on the standardized test piece with diameter 6 mm and 8 mm, thus, compression tests were extracted from the positions of 0°, 45° 90° with test specimen of 4 mm diameter and 6.5 mm length at weld center. Whereas, the impact test pieces were picked up in two positions, the first one is symmetrical, which it obtained to the respect of the rotation axis and the interface, on the other hand, the second one is non-symmetrical with the axis of rotation and symmetrical to the interface, for making the notch head coincide with the center of the welded joint, The obtained results showed that with reducing of friction pressure will present lack of bonding increasing from peripheral toward the welding center, which will responsible on reducing of the mechanical properties such as tensile, compression and impact strength. 相似文献
12.
目的研究蛋类礼盒包装结构的缓冲性能。方法以蛋类尺寸为基础,建立可发性聚乙烯(expandable polyethylene. EPE)缓冲单元结构和组合结构,进行静态仿真分析和实验验证,比较结构在形状、叠合层数、组合形式等参数变化时的载荷与位移。结果结构层数变化相同时,单元结构的极限载荷从143N增加到236 N,组合结构的极限载荷从224 N增加到476 N,均呈近线性增长。结论蛋类礼盒包装中,组合结构的承载能力优于单元结构,通过单元结构的组合,可满足不同蛋类的包装要求。 相似文献
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基于C4AF可以提高水泥基材料的抗蚀性,以高铁低钙水泥熟料为研究对象,掺入不同含量的CuO,通过对熟料及其水化产物进行X射线衍射(XRD)、水化热、抗压强度、非蒸发水含量和固化氯离子能力等测试,探究Cu2+对高铁低钙水泥熟料水化性能与氯离子吸附固化能力的影响.结果发现,适量CuO的掺入促进了高铁低钙水泥熟料中C4AF的生成,降低了熟料液相的粘度,有利于C3S的晶粒生长,有利于提高高铁低钙水泥熟料的水化活性和固化氯离子能力,最佳掺量为0.2 wt%. 相似文献
15.
Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth. 相似文献
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分别使用AutoCAD、StruCAD 3D及Solid Works软件在石油井架、底座校核中进行强度分析,AutoCAD软件的主要优势在工程制图领域,兼具强度分析功能,适用于单个形状比较规则的型材强度分析;StruCAD 3D是专门针对大型钢结构进行强度校核的分析软件,具有强大的计算处理功能,兼具风载处理能力,在处理大型、复杂结构的时候应优先考虑应用该软件;当遇到需要进行实体造型、模拟实际情况进行校核时,SolidWorks软件较为方便,可以直观地看到应变情况。 相似文献
18.
目的研究热风辅助射频(hot air-assisted radio frequency,HA-RF)干燥过程中维生素C随温度变化的降解动力学模型。方法在6.5 cm极板间距和60℃热风系统条件下进行HA-RF干燥,重点研究胡萝卜丁中维生素C在干燥过程中的降解动力学,包括脱氢抗坏血酸(dehydroascorbic acid,DHAA)和抗坏血酸(ascorbic acid,AA)。总维生素C含量采用2,4-硝基苯肼分光光度法测定,AA采用2,6-二氯吲哚酚滴定法测定。结果HA-RF干燥过程中维生素C的降解规律符合一级可逆模型,其降解活化能为40.54 kJ/mol。DHAA活化能为35.83 kJ/mol,表明DHAA的稳定性低于AA。结论本研究使用的干燥温度为62.5~77.5℃,较高的干燥温度下维生素C降解速率较高,较低处理温度下的降解过程具有更好的模型适应度(R2>0.98)。 相似文献
19.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. 相似文献
20.