我国内螺纹铜管的生产技术与发展方向

本文论述了我国内螺纹铜管业生产、工艺、产品技术条件、齿型及市场现状 ,提出了内螺纹铜管的研发方向。     

智能工作站主机的MMPIS实验模型研究──一个全互连式结构MMPIS硬件环境的设计与实现

本文介绍中日国际合作开发研究的Ａ１型智能网（Ａ１型ＩＮ）智能工作站（ＩＷ）主机的并行推理硬件结构的实验模型设计与实现，给出了一种并行推理硬件支持环境实现方案和该方案在实现中若干问题的解决方法。     

新型重整催化剂的研究——Pt／L中沸石酸碱性的作用

Ｐｔ／ＫＬ、Ｐｔ／ＢａＫＬ及Ｐｔ／ＨＬ上的铂与沸石的酸碱位发生相互作用，导致催化剂上存在不同电子状态和粒度分布的铂位，从而产生有着完全不同催化作用、不同抗硫性能的两类催化剂，即以碱性沸石为载体的“单功能”催化剂和以酸性沸石为载体的“双功能”催化剂。在Ｐｔ／ＫＬ、Ｐｔ／ＢａＫＬ催化剂上，存在着对硫敏感的具有环化脱氢功能和对硫不敏感的仅具有脱氢功能的两类铂活性位。     

内燃机油添加剂之间相互作用的研究

探讨了内燃机油添加剂之间的相互作用，磺酸盐与水杨酸盐的相容性差，混合后有沉淀物生产；水杨酸盐与丁二酰亚胺，ＺＤＤＰ有较弱的相互作用，添加量小时无沉淀物生成，添加量大时才有沉淀物生成；磺酸盐与丁二酰亚胺，ＺＤＤＰ的相容性好，混合后沉淀物生成。该结论为内燃机油的调配，贮存和全用提供了科学依据。     

OSCILLATION AMPLITUDE OF THE FREE END OF A FLEXIBLY MOUNTED RIGID CYLINDER IN TRIANGLE ARRANGEMENT

In this paper,the oscillation amplitude of the free end of a group of threecylinders are studied.The three cylinders are erected at the vertices of an equilateral trian-gle,and three arrangements are made in this study.One of the three cylinders is served asa working cylinder which is mounted by a flexible cantilever and two accelerometers areattached on the free end in two directions.The results of the three-cylinder arrangementare compared with those of two cylinders in tandem/side-by-side arrangement in the samecondition.The experimental results show that the rear cylinder of a group of three cylin-ders is affected more seriously than that of the corresponding two cylinders in the contrastarrangement.The main direction of oscillation is changed.The transversal oscillation isstronger than the longitudinal oscillation in the three-cylinder arrangement.On the con-trary,the transversal oscillation is much weaker than the longitudinal oscillation in two-cylinder arrangement.The largest transversal oscillat     

GLOBAL: A Design for Random Testability Algorithm

1MotivationsIncreasingdensityofVLSIchipsmakesthecostoftestingveryexpensive.Designfortestabilitycantemperthisproblemdrastically.Therearetwokindsofsolutions:(i)localsolutionl3'2]withlowcomputingcomplexity,whichcannotalwaysgetsatisfactoryresults;(ii)globa.lsolutionwithprohibitivecomputingcomplekityl1'5].T.H.Chen'andM.A.Breuer[1lpresentedanILPmodeltoplacetestpointsglobally.Becauseofitscomputingcomplealty,[1lcanonlydealwithsmallormediumscalecircuits.SCOAPisusedin[1],whichisnotaveryaccuratet…     

令牌多环网性能—可靠性综合评价

网络的性能与可靠性已分别得到广泛的研究,然而,怎样分析具有容错机制的环网的性能仍属有待开拓的研究领域,本文提出了一种分析具有自修复机制的多环网络系统的方法,并给出了报文传输时间分布的拉氏变换式,平均等待时间及平均队列长度公式,分析结果可用于评估故障与修复过程对实时令牌环网的实时响应特性的影响,对基于LAN的分布式实时系统设计具有指导意义。     

非线性系统鲁棒吸引的动态补偿方法

考虑非线性不确定系统的鲁棒吸引问题,借助于动态输出反馈,构造了两类控制律。这两类控制律分别可使相应的闭环系统被一任意小的区域鲁棒吸引,或被一预先设置的区域有限吸引。     

Clinical study on effect of bushen shengxue paste in treating renal anemia patients

OBJECTIVE: To evaluate the therapeutical mechanism of Bushen Shengxue Paste (BSSXP) on anemia. METHODS: Chronic renal failure induced anemia patients were treated with BSSXP, clinical manifestation, anemia and renal function as indicators were observed in patients. The erythropoietin (EPO) and inhibition of colony-forming unit-erythrocyte (CFU-E) in patients' serum were determined by CFU-E in vitro. RESULTS: The patients' symptoms, renal function and anemia were improved after administration with BSSXP 1-2 course. EPO in serum was slightly increased. The inhibition of CFU-E in patient's serum was significantly decreased. CONCLUSIONS: BSSXP could improve the anemia degree, its mechanism might be through clearing the inhibitor of CFU-E in serum.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors