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61.
Ryohei Kimura Akiyoshi Monma Jinsong Duan Mitsuru Uesugi 《Wireless Personal Communications》2006,38(1):27-42
Orthogonal frequency division multiplexing (OFDM) is robust against multi-path interference due to using a lot of low symbol rate sub-carriers. In order to mitigate the degradation due to multi-path interference, guard time interval (GI) is inserted into each OFDM symbol. However, redundant allocation to GI leads to loss of effective transmission power. We propose the Block-OFDM which can reduce the GI overhead ratio per frame compared with conventional OFDM. In Block-OFDM system frequency domain equalization (FDE) is carried out in order to remove multi-path interference. We evaluated Block-OFDM performance in a frequency selective fading channel and compared with that of conventional OFDM.
Ryohei Kimura received his B.E. and M.S degrees in communications engineering form Tohoku University, Sendai, Japan, in 2001 and 2003, respectively. In 2003, he joined Panasonic Mobile Communications Co., Ltd. His current research interests include such mobile communication technologies as OFDM and MIMO (MLD), and the like.
Akiyoshi Monma received his B.E. in communications engineering form Tohoku University, Sendai, Japan, in 1998. In 1998, he joined Panasonic Mobile Communications Sendai R&D Lab. Co., Ltd. His current research interests include such mobile communication technologies as OFDM and PAPR reduction, and the like.
Jinsong Duan received his B.E. and M.S. from Changsha Institute of Technology, China in 1987 and 1990. He received his Ph.D. from Osaka City University, Japan in 2000. From 2000–2003 he was with Mitsubishi Electric Corporation, where he engaged in research and development of WCDMA systems. From 2003, he joined Panasonic Mobile Communications Co., Ltd. His current interests include such mobile communication technologies as OFDM, MIMO, link adaptation, scheduling, and TDMA/FDMA/CDMA systems.
Mitsuru Uesugi received his B.E. degree from Waseda University in 1986 and received his Ph.D degree from Tohoku University in 2004, respectively. He is a general manager in the Mobile Communication Technology Development Center of Panasonic Mobile Communications Co., Ltd. His current research interests include such mobile communication technologies as equalization, interference cancellation, modulation method, and the like. 相似文献
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根据SDH通信原理,研究并拓展了基于数字微波传输通道的以太网络技术,以山西广播电视监测网络为实例,详细阐述了网络建设过程中的关键技术和维护要点。该网络结合自身特点,因地制宜采用数字微波传输方式成功进行组网,不仅合理利用了广电资源,在数字微波的综合应用方面也有较为实用的借鉴意义。 相似文献
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Zhiqiang Niu Wenjun Ma Jinzhu Li Haibo Dong Yan Ren Duan Zhao Weiya Zhou Sishen Xie 《Advanced functional materials》2012,22(24):5209-5215
A critical challenge in nanocomposite fabrication by adding SWCNTs as reinforcement is to realize an effective transfer of the excellent mechanical properties of the SWCNTs to the macroscale mechanical properties of the matrix. Using directly grown SWCNT films with continuous reticulate structure as the template, Cu/SWCNTs/Cu laminated nanocomposites are fabricated by an electrodepositing process. The resulting Cu/SWCNTs/Cu laminated nanocomposites exhibit extremely high strength and Young's modulus. The estimated Young's modulus of the SWCNT bundles in the composite are between 860 and 960 GPa. Such a high strength and an effective load‐transfer capacity are ascribed to the unique continuous reticulate architecture of SWCNT films and the strong interfacial strength between the SWCNTs and Cu matrix. Raman spectroscopy is used to characterize the loading status of the SWCNTs in the strained composite. It provides a route to investigate the load transfer of SWCNTs in the metal matrix composites. 相似文献
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Unpassivated/passivated AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 1.25 MeV 60Co γ-rays at a dose of 1 Mrad(Si). The saturation drain current of the unpassivated devices decreased by 15% at 1 Mrad γ-dose, and the maximal transconductance decreased by 9.1% under the same condition; more- over, either forward or reverse gate bias current was significantly increased, while the threshold voltage is relatively unaffected. By sharp contrast, the passivated devices showed scarcely any change in saturation drain current and maximal transconductance at the same γ dose. Based on the differences between the passivated HEMTs and un- passivated HEMTs, adding the C–V measurement results, the obviously parameter degradation of the unpassivated AlGaN/GaN HEMTs is believed to be caused by the creation of electronegative surface state charges in sourcegate spacer and gate–drain spacer at the low dose (1 Mrad). These results reveal that the passivation is effective in reducing the effects of surface state charges induced by the 60Co γ-rays irradiation, so the passivation is an effective reinforced approach. 相似文献