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151.
We derive an effective single-band Hubbard type Hamiltonian for CuO2 planes. The Hamiltonian includes both electron-electron repulsion and electron-phonon coupling to oxygen vibrational modes. We start with first-principles density functional theory parameters and then map onto a single-band model. Unlike previous mappings to a single-band Hamiltonian, ours explicitly preserves the Fermi surface shape and matrix elements of the many-band Hamiltonian. We consider both in-plane oxygen breathing modes as well as out-of-plane tilting modes. The latter modes have a quadratic electron-phonon coupling, and are also highly anharmonic in La2CuO4 based superconductors. The coupling to breathing modes is too small to account for highT
c, while the coupling to quadratic modes is much stronger even though they would be neglected in a standard Migdal-Eliashberg approach to superconductivity. 相似文献
152.
We solve the Kohn-Sham equations self-consistently in the local density approximation for spheroidal sodium clusters in the particle range 8 ≤ Z ≤ 40. We use a smooth fermi-like jellium density to simulate the influence of the ions in the surface region and obtain similar results as Ekardt and Penzar, but slightly different regions of prolate-to-oblate transitions. We present the systematics of potential energy curves with respect to transitions between oblate, prolate and spherical shapes. Shape transitions occur at particle numbers 12/14 (prolate/oblate), 18/20/22 (oblate/spherical/prolate) and 30/32 (prolate/oblate), which are in good agreement with experimental results. The quadrupole and hexadecupole overlap of the electron density with the jellium is investigated, showing a strong hexadecupole dependence for selected clusters. Collective dipole resonances are described in a simple sum rule approach, which reveals a double splitting according to the different resonance frequencies along the principal axes of the spheroid. The systematics of the resonance peaks for the larger clusters with Z ≥ 20 is in good agreement with experimental results. 相似文献
153.
Theoretical analyses for the single fibre pull-out and push-out models under monotonic loading are given which are based on a shear-lag analysis in a fracture mechanics approach considering non-constant friction at the debonded interface as a result of fibre Poisson contraction (or expansion). The solutions allow the determination of typical fibre/matrix interfacial properties such as the interfacial fracture toughness, Gic, the coefficient of friction, μ, and the residual clamping stress, q0. Under cyclic loading the interfacial properties are expected to degrade as a result of repetitive abrasion, and a power law function is assumed between μ and the number of elapsed cycles, N. However, Gic is assumed to be unaffected and a fracture mechanics based debond criterion is derived for the relationship between the external applied stress, the debond length and the reduced friction coefficient for both fibre pull-out and fibre push-out. In addition, the relative displacements between the free fibre end and the matrix top are obtained for cyclic fatigue when the fibre is loaded and unloaded. A relationship obtained for the protrusion (or intrusion) length in fibre pull-out (or push-out) experiments allows the severity of the interface frictional degradation to be evaluated and characterised. Similarities and differences in the frictional degradation behaviour between fibre pull-out and push-out are also identified. 相似文献
154.
Fracture toughness and fatigue crack propagation (FCP) of plain and modified anhydride-cured epoxy resin (EP) were studied at ambient temperature. Liquid carboxyl-terminated acrylonitrile-butadiene (CTBN) and silicon (SI) rubber dispersions were used as tougheners for the EP. The morphology of the modified EP was characterized by dynamic mechanical analysis (DMA) and by scanning electron microscopy (SEM). The fracture toughness, Kc, of the compositions decreased with increasing deformation rate. Kc of the EP was slightly improved by CTBN addition and practically unaffected by incorporation of the SI dispersion when tests were performed at low cross-head speed, v. Both modifiers improved Kc at high v, and also the resistance to FCP, by shifting the curves to higher stress intensity factor ranges, ΔK, by comparison with the plain EP. It was established that both fracture and fatigue performance rely on the compliance, JR, at the rubbery plateau, and thus on the apparent molecular mass between crosslinks, Mc. The failure mechanisms were less dependent upon the loading mode (fracture, fatigue), but differed basically for the various modifiers. Rubber-induced cavitation and shear yielding of the EP were dominant for CTBN, whereas crack bifurcation and branching controlled the cracking in SI-modified EP. The simultaneous use of both modifiers resulted in a synergistic effect for both the fracture toughness at high deformation rate and the FCP behavior. 相似文献
155.
Agnieszka J Klemm Piotr Klemm Kazimierz Rozniakowski Tomasz W Wojtatowicz 《Building and Environment》2002,37(12):1221-1232
This paper present the results of the investigation into a potential application of laser radiation for the detection of phase transition processes occurring on the surface layers of porous materials. An attempt was made to discuss in the approximation equations, the relationships between coefficients of the reflected light, the temperature and humidity of the surrounding environment. Laser light reflected from the porous surface carries information about the roughness of the structure. The presence of water microdrop on the surface of the porous material, as a result of condensation and thus a phase transition, leads to the phase displacement of individual rays, which is represented by different images. Therefore, a comprehensive analysis of the reflected light parameters allows a dynamic study of the phase transition phenomena without mechanical intervention. 相似文献
156.
An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature. 相似文献
157.
Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy. 相似文献
158.
This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained. 相似文献
159.
This paper presents observations regarding the cracking behavior of tensile-loaded structural adhesive joints. Experiments showed that fracture occurred by the development and propagation of a damage zone, rather than a single, sharp crack, and that the presence of the adhesive spew fillet did not affect the fracture load of the adhesive joints studied. For joints bonded with the mineral-filled epoxy Cybond 4523GB (American Cyanamid), there was approximately 5 mm of subcritical crack propagation prior to final fracture. Fracture-load predictions based on the initial uncracked geometry made in previous papers were unaffected by this small change in geometry. For joints bonded with the rubber-toughened epoxy Permabond ESP 310, approximately 50 mm of subcritical crack propagation was observed. It was again found that predictions made in previous papers on the basis of the initial geometry gave a good estimate of the final fracture load even though this subcritical crack propagation significantly altered the geometry, and thus the applied energy release rates. The effect of shear deformations of the adherends was also investigated, and it was found that shear deformations could be neglected in engineering calculations for joints subject to remote tensile loading. 相似文献
160.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献