锅炉炉管爆破原因分析

对在爆裂的水冷壁管正常管段和鼓包处所取的试样分别进行化学分析、金相检验、硬度测定和高温拉伸试验。分析结果表明，在近烧嘴的炉管长期处于超温工作状态，引起该部位材质严重劣化，高温强度不断下降，当该部位的高温强度低于锅炉炉管对材质所要求的技术条件即会发生爆裂。对炉管的继续使用提出了应急的预防措施。     

火电厂实施废水零排放的可行性探讨

对合肥发电厂的用排水现状进行了介绍，并提出了实施废水零排放的可行性方案。     

DLL23XA双侧向测井仪的研制

以往双侧向测井仪动态范围小，测量精度低，为此开发了DLL23XA双侧向测井仪。该仪器主要单元采用厚膜电路，稳定性、一致性好；深、浅屏流源采用可变功率控制，提高了仪器的动态范围。仪器采用3506P例进行数据传输，可方便地配接各种地面系统。     

静电火灾的产生及其防治

文章详细分析了静电产生的机理，指出积聚静电电荷的多少与材料的电阻率和介电常数有关。讨论了静电火灾发生的条件，指出静电火灾的发生具有隐蔽性、复杂性和突发性。但只要对其规律进行深入地研究，可以找到有效地防止静电火灾发生的办法。     

宽低温STN—LCD加热装置的研制

本文介绍了宽低温ＳＴＮ－ＬＣＤ加热装置的设计和制备方法，并对低温加热的实验结果进行了讨论和分析，相应的研究结果表明此法有利于拓宽ＳＴＮ液晶显示器的负温工作范围。     

准分子激光器异步感应密封传动技术

一种新型准分子激光器循环系统中的密封传动技术，具有可耐高气压，不失耦，不使用昂贵强磁材料，结构简单等优点，虽有涡流损失过大之不足，但能很好地适用于小功率下运行。     

Experimental evaluation of the strength distribution of E-glass fibres at high strain rates

A bimodal Weibull distribution function was applied to analyse the strength distribution of glass fibre bundles under tensile impact. The simulation was performed using a one-dimensional damage constitutive model. The results show that there were two concurrent flaw populations in the fracture process. The regression analysis using the bimodal Weibull distribution function was in good agreement with experiment.     

前馈和反馈相结合的控制策略在宝钢线材厂控冷轧线上的应用实践

在详细分析料坯在水箱内冷却热过程特点的基础上，提出了前馈和反馈相结合的水流量优化控制策略，并将该策略应用于宝钢线材厂控冷轧线上。实际运行结果表明：该策略能够合理地控制水箱水流量，从而保证了线材水箱出口处的温度满足工艺要求，大大提高了线材成品的质量。所做工作对国内同类企业有重要的意义。     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress