Positive holes in magnesium oxide. Correlation between magnetic, electric, and dielectric anomalies

Magnetic susceptibility measurements of high purity MgO single crystals (<50-wt. ppm transition metals) by means of a vibrating-sample magnetometer shows an anomaly at 800 K. At the same temperature the electric conductivity increases anomalously, the static dielectric constant epsilon increases from 9 to approximately 150, a pronounced positive surface charge appears, and Fe2+ in the MgO matrix oxidizes to Fe3+. The data are consistent with O2(2-) (peroxy) defects, representing self-trapped, spin-paired positive holes at Mg2+ vacancy sites. Diamagnetic at low temperatures, the holes start to decouple their spins > 600 K, probably forming at first V0 centers (two O- at an Mg2+ vacancy), then V- centers (single O- at an Mg2+ vacancy), and releasing mobile O- states. These O- represent itinerant charge carriers on acceptor levels near the O 2p-dominated valence band and conduct by O- /O2- valency fluctuations. The O- concentration is of the order of 8 X 10(19) cm-3.     

Recent progress of CERN RD50 Collaboration

The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider （LHC） which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski （MCz-Si）, epitaxial silicon （Epi-Si） on Czochralski silicon （Cz-Si） substrate, intentionally thermal donor （TD） compensated p-type MCz-Si and oxygen enriched （DOFZ） silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.     

D2工具钢在气淬和回火过程中的各向异性畸变

分别使用铸造试样及两种不同锻造程度的锻件试样，对高合金冷作模具钢D2在气淬和回火过程中的畸变行为进行了研究。试验结果表明，铸造试样的畸变是等向性的，而锻造试样的畸变显然呈各向异性。各向异性畸变程度随奥氏体化温度的升高而增加。在本试验范围内，不同的锻造程度对各向异性的畸变程度影响不大。回火后各向异性畸变程度有所降低。使用测膨胀方法及金相检验探讨了产生各向异性畸变的可能机制。     

液-液萃取法分离铂族金属

从矿石提取铂族金属,将其精制到所要求的很高纯度,以应多方面的使用,需要大量复杂的操作过程。现在,从铂族混合液中,产出单一铂族金属的最终精制过程,是用选择沉淀来实现,然而,就分离程度而论,其效率是低的。一种改进的方法——液—液萃取法,已发展到中间工场阶段。本文在此法分离的基础上,着重谈某些化学及操作的原理。     

Experimental Study of Microstructure Evolution during Tempering of Quenched Steel and Its Application

LARGE-SIZED FORGINGS are usually intensivelyquenched to obtain the desired microstructuredistribution,high strength and hardness.Becauseresidual stresses are high in quenched large-sizedforgings,tempering processes follow quenchingprocesses to reduce the residual stress and obtain goodmechanical properties.Several differentmicrostructures are generated in quenched steelforgings,such as martensite,bainite and retainedaustenite.Modeling of microstructure evolution inquenched steel during …     

鋁电解工艺的现状

历史資料在第二次世界大战之前,彼施涅公司的鋁厂装备的是3～5万安培的預焙阳极电解槽和2～3万安培的側部导电自焙阳极电解槽。电解槽的技术指标列于表1。