一种用于UHF RFID的低压高效电源产生电路

介绍了一种为无源UHF RFID设计的高效高灵敏度电源产生电路.该电路基于0.18μm工艺,其中包含了两个电荷泵,一个参考电流源和一组偏置电路.由于其偏置电路消除了传统电路中的阈值损失和体效应,使该电路在低压下的电源转换性能得到很大的提高.要为100kΩ负载提供1.5V电源电压,所需最小输入电压为350mV,转换效率为22%.在负载为60kΩ时,最高可以获得29.8%的转换效率.仿真结果表明,新的电路结构比传统的电荷泵具有更优越的性能.     

黑龙江移动GSM网络交换设备搬迁建设方案探讨

着重论述了在全网交换设备搬迁过程中，对交换及配套传输工程所采取的关键技术、建设思路、建设方案、阶段安排以及流程分析等，并详细探讨了在搬迁中遇见的问题及解决方案。     

Vapor Phase Growth of Centimeter-Sized Band Gap Engineered Cesium Lead Halide Perovskite Single-Crystal Thin Films with Color-tunable Stimulated Emission

Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl_3(1–x)Br_3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl_3(1–x)Br_3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm⁻²) amplified spontaneous emission is achieved based on CsPbCl_3(1–x)Br_3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl_3(1–x)Br_3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm⁻¹. This study not only provides a versatile method to fabricate high quality CsPbCl_3(1–x)Br_3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.     

Influence of Photolithography on the Cross-Sectional Shape of Polysiloxane as an Optical Waveguide Material on Printed Circuit Boards

Optical waveguide cross-sectional shapes that deviate from rectangles or squares may cause significant loss of signal. In this study, a photolithography approach was adopted to fabricate waveguides on printed circuit boards, using photo-imageable polysiloxane as a waveguide material. The effects of I-line ultraviolet (UV) lamp exposure, 355-nm Nd:YAG laser direct imaging, and 248-nm excimer laser direct imaging on the cross-sectional shape of waveguides were investigated. For I-line UV lamp exposure, increasing the exposure time could cause changes in the tilt angle of the waveguides from negative (inverted trapezoid) to positive (trapezoid). To obtain rectangular waveguides, the optimum I-line UV lamp exposure time was found to be around 150 s. From the results for 355-nm Nd:YAG laser direct imaging, the width and tilt angle of the waveguides varied with the energy density of the laser beam irradiating the core materials, being controlled by the repetition rate and focus. Lowering the laser energy density could produce waveguides with small widths and tilt angles. Excimer laser direct imaging at 248 nm was found to be unsuitable for waveguide patterning since the core materials could not be cured at this wavelength.     

高压环境双水平井SAGD三维物理模拟实验

针对原始地层压力较高且难于在短期内降压的特稠油油藏,为了研究双水平井SAGD在高压环境下的开发效果,利用高温、高压三维物理模拟系统进行了SAGD物理模拟实验,并分析了在原始地层压力较高的特稠油油藏中进行SAGD生产的各项特征。研究结果表明:与低压环境下的SAGD生产过程相比,在高压环境下蒸汽腔发育过程虽然也分为3个阶段,但是蒸汽腔体积小,横向扩展范围有限;生产过程中没有出现稳产阶段,产油速率和油汽比在达到最大值以后迅速降低,大量原油在高含水和低油汽比阶段被产出;生产过程中热损失速率先缓慢、后迅速增加,最后保持稳定,与蒸汽腔发育的3个阶段相对应。根据实验研究结果可知,在高压环境下进行SAGD生产难以取得较为理想的开发效果,低压环境下SAGD开发的采收率远高于高压环境下SAGD的采收率。因此,高压环境下实施SAGD不能有效释放蒸汽潜热从而提高稠油油藏采收率,在能降低油藏压力的条件下,应首先利用适当工艺措施降低油藏平均压力,再实施SAGD开发。     

东濮凹陷古近系沙河街组烃源岩生烃底限及其差异探讨

随着油气勘探不断向地层深部拓展,弄清烃源岩层生烃底限对于确定含油气盆地有效勘探领域范围和评价油气资源潜力都具有十分重要的意义。为此,以渤海湾盆地东濮凹陷古近系沙河街组烃源岩为研究对象,根据烃源岩层生排烃机理,采用有机元素变化分析法、生烃潜力法、残留烃量法和排烃量法4类7种方法对该区烃源岩的生烃底限进行了研究。结果表明:1用不同方法确定的沙河街组烃源岩生烃底限相差不大,全区生烃底限对应的镜质体反射率值(Ro)介于3.23%~3.97%,平均为3.71%,全区生烃底限对应的深度H值介于5 244~5 525m,平均为5 433 m;2凹陷北部生烃底限Ro介于3.61%~3.97%,平均为3.81%,其生烃底限H值介于5 415~5 545m,平均为5 488 m;3凹陷南部生烃底限Ro介于3.20%~3.74%,平均为3.48%,其生烃底限H值介于5 265~5 375m,平均为5 278 m。结论认为:该区南、北地区生烃底限存在差异,北部地区生烃底限对应的热演化程度(Ro)值和深度值明显高于南部地区,这与凹陷北部沙河街组发育巨厚膏盐层有关,主要体现为南、北地区在有机质类型、地层温度和压力等方面存在着差异性。     

采用多点地质统计法重构页岩的数字岩心

由于实验设备获得的页岩岩样大多是微米或毫米尺度,如果要获得更大尺度和范围内的孔隙结构,必须通过对其特征的三维重构才能实现。为此,提出了基于纳米精度的体数据与多点地质统计方法的页岩三维数字岩心重构方法。以页岩纳米CT数据为训练图像,使用数据模板提取其中的结构特征,通过多点地质统计方法将结构特征重构到数字岩心中;形成了以变差函数曲线、孔隙直径分布和孔隙连通性来判别重构岩心与真实页岩结构相似度的判别方法 ;基于格子玻尔兹曼方法验证了相似度评价方法。结果表明:(1)变差函数可以检验重构岩心与真实岩心的空间相似性,孔隙直径分布和孔隙连通性可以检验流动特征的相似性;(2)当变差函数曲线、孔隙直径分布和孔隙连通性相似时,重构岩心与真实岩心的渗透率相近,表明所提出的重构方法与结构相似度评价方法是有效的;(3)由于强非均质性,不同位置的重构页岩岩心渗透率差异可超过100倍。该研究成果对构建三维大尺寸强非均质性页岩数字岩心、认识页岩孔隙结构、分析流动规律具有指导作用。     

Application of high-quality SiO/sub 2/ grown by multipolar ECR source to Si/SiGe MISFET

A 5 nm-thick SiO/sub 2/ gate was grown on an Si (p/sup +/)/Si/sub 0.8/Ge/sub 0.2/ modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*10/sup 16/ cm/sup -2/. Leakage current as low as 1 mu A was obtained with the gate biased at 4 V. The MISFET with 0.25*25 mu m/sup 2/ gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.<>     

MIS型单晶硅液晶光阀

详细介绍了一种新颖、快速响应的金属－绝缘层－半导体构成的MIS型单晶硅液晶光阀的结构、工作机理、制作工艺和性能参数测试。液晶采用45°扭曲向列型混合场效应工作模式。所得到的光阀的极限分辨率为40lp／mm，口径40mm，最大对比度＞100：1，在930nm（△λ＝40nm）写入光灵敏度为20μW／cm2，响应时间为15ms。报道了该光阀在大屏幕投影显示中的应用。     

加压热煤气脱硫技术研究初步结果

新建成了一套热煤气脱硫剂试验台架系统,加压流化床操作,已成功地投入运行。进行了钛酸锌脱硫剂的初步试验,并取得了4个循环试验的结果。