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51.
S. M. Arnold A. F. Saleeb H. Q. Tan Y. Zang 《International journal for numerical methods in engineering》1994,37(11):1931-1944
The issue of developing effective and robust schemes to implement a class of the Ogden-type hyperelastic constitutive models is addressed. To this end, special purpose functions (running under MACSYMA) are developed for the symbolic derivation, evaluation, and automatic FORTRAN code generation of explicit expressions for the corresponding stress function and material tangent stiffness tensors. These explicit forms are valid over the entire deformation range, since the singularities resulting from repeated principal-stretch values have been theorectically removed. The required computational algorithms are outlined, and the resulting FORTRAN computer code is presented. 相似文献
52.
In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load 相似文献
53.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
54.
攀钢转炉炼钢用碳化硅提温的试验研究 总被引:1,自引:1,他引:0
低品位碳化硅是转炉炼钢的有效提高温剂。工业性试验结果表明,碳化硅加入8.0kg/t钢水提温40.3-70.3℃(平均48.4℃);渣中TFe降低1.3%;加提温剂有利于转炉内造渣脱硫和碱少炉渣对耐火砖的侵蚀。文中还给出了攀钢转炉半钢冶炼铸用钢不水时加与不加碳化硅的tλ,[C]λ区域。 相似文献
55.
56.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
57.
MA Perrella C Patterson L Tan SF Yet CM Hsieh M Yoshizumi ME Lee 《Canadian Metallurgical Quarterly》1996,271(23):13776-13780
58.
Tan W.S. Uren M.J. Houston P.A. Green R.T. Balmer R.S. Martin T. 《Electron Device Letters, IEEE》2006,27(1):1-3
A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface. 相似文献
59.
Ng J.S. Tan C.H. David J.P.R. Hill G. Rees G.J. 《Electron Devices, IEEE Transactions on》2003,50(4):901-905
Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes. 相似文献
60.