Synthesis and characterization of tungsten disulphide films grown by pulsed-laser deposition

The synthesis and characterization of tungsten disulphide (WS₂) films grown on 440C stainless steel substrates using the 248 nm line from a KrF excimer laser are reported. Film properties could be adjusted by controlling substrate temperature and by laser or thermal anneals. X-ray photoelectron spectroscopy, glancing angle XRD, Raman spectroscopy and high-resolution scanning electron microscopy were used to evaluate film chemistry, crystallinity and morphology. Films grown at room temperature were amorphous, near stoichiometric, and had a multiplicity of chemical states. Local order and bonding were improved most dramatically through post-deposition laser anneals. Crystallite size could be increased by raising the substrate temperature during deposition and, to a lesser degree, by post-deposition thermal anneals. Local disorder was observed within the larger crystallites compared to those that were laser annealed. Crystallinity was induced in amorphous films by mechanical rubbing at room temperature under conditions where frictional heating was negligible. The degree of control over film properties provided by PLD demonstrates its value for growing/designing tribological coatings.     

EFFECT OF THE RATIO Th/U ON TL DATING ACCURACY

ＥＦＦＥＣＴＯＦＴＨＥＲＡＴＩＯＴｈ／ＵＯＮＴＬＤＡＴＩＮＧＡＣＣＵＲＡＣＹ￥Ｐ．Ｌ．Ｌｅｕｎｇ（梁宝鎏）；ＭｉｃｈａｅｌＪ．Ｓｔｏｋｅｓ（ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓａｎｄＭａｔｅｒｉａｌｓＳｃｉｅｎｃｅ，ＣｉｔｙＰｏｌｙｔｅｃｈｎｉｃｏ...     

Multitemporal passive microwave mapping in MACHYDRO'90

MACHYDR0'90 was an experiment conducted in Pennsylvania in 1990 to study the synergistic use of remote sensors in multitemporal hydrologic studies. As part of this mission the pushbroom microwave radiometer was flown and used to produce brightness temperature maps. Verification studies and vegetation algorithms for mixed land cover areas are described     

A neural network control system with parallel adaptive enhancementsapplicable to nonlinear servomechanisms

In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load     

Optoelectronic integration of a GaAs/AlGaAs bistable field effecttransistor (BISFET) and LED

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V     

A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm