Depth of intergranular oxygen diffusion during environment-dependent fatigue crack growth in alloy 718

The elevated-temperture fatigue crack growth behavior in alloy 718, when subjected to a loading frequency lower than the transitional frequency of this alloy, is viewed as fully environment dependent. In this process, the crack growth increment per loading cycle is assumed to be equal to the intergranular oxygen diffusion depth at the crack tip during the cycle effective oxidation time. In order to identify the trend of this diffusion depth an experimental program was carried out on compact tension specimens made of alloy 718 at 650 °C in which fatigue crack growth measurements were made for cyclic load conditions with and without hold time periods at minimum load level. This work resulted in establishing a relationship correlating the intergranular oxygen diffusion depth and the value of the stress intensity factor range ΔK. This relationship, when integrated over the cycle effective oxidation time, results in a closed-form solution describing the environment-dependent fatigue crack growth rate. A comparison is made between the results of this solution when applied to different loading frequencies and the corresponding experimental results. This comparison shows good agreement between the two sets of results. Furthermore, by combining the parabolic rate law of diffusion and the equation for the intergranular oxygen diffusion depth, an explicit expression for the oxygen diffusivity of grain boundaries is derived. It is found that this diffusivity is both a ΔK- and a frequency-dependent parameter.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained     

Cost Effective VLSI Architectures for Full-Search Block-Matching Motion Estimation Algorithm

In this paper, we present efficient VLSI architectures for full-search block-matching motion estimation (BMME) algorithm. Given a search range, we partition it into sub-search arrays called tiles. By fully exploiting data dependency within a tile, efficient VLSI architectures can be obtained. Using the proposed VLSI architectures, all the block-matchings in a tile can be processed in parallel. All the tiles within a search range can be processed serially or concurrently depending on various requirements. With the consideration of processing speed, hardware cost, and I/O bandwidth, the optimal tile size for a specific video application is analyzed. By partitioning a search range into tiles with appropriate size, flexible VLSI designs with different throughput can be obtained. In this way, cost effective VLSI designs for a wide range of video applications, from H.261 to HDTV, can be achieved.     

Effect of Bi and Sr concentrations on the formation of the 2223 phase in Bi-Pb-Sb-Sr-Ca-Cu-O materials, obtained under different conditions of thermal treatment

The superconducting properties and the phase and chemical composition of Bi _x Pb_0.3Sb_0.1Sr _y Ca₂Cu₃O_z (x=1.5, 1.6, and 1.7;y=1.9, 2.0, and 2.1) materials synthesized by one-step and multistep thermal treatments have been investigated. The multistep annealing between 825–875°C promotes the 2223 phase. The change of Bi concentration has little effect on the 2223 phase formation, regardless of the kind of thermal treatment used, but increasing the Sr concentration (y> 2) strongly inhibits this phase. It has also been established that the loss of Pb after synthesis depends on the initial Bi concentration. The loss of Pb decreases when the initial Bi content is lower.     

Kinetic study of the hydrolysis of isocyanic acid in the gas phase

The hydrolysis of isocyanic acid in the gaseous phase has been investigated at temperatures between 553 and 613 K by mass spectrometry and evaluated to obtain the corresponding kinetic data. The reaction order and reaction constant have been determined. Finally, the influence of water on the catalysed formation of melamine from isocyanic acid under the operating conditions employed has been investigated in order to determine whether there is a need to try the process gas.     

A numerical model for the dissolution of spherical particles in binary alloys under mixed mode control

A general numerical model is described for the dissolution kinetics of spherical particles in binary systems for any combination of first order reactions at the particle-matrix interface and long distance diffusion within the matrix. The model is applicable to both finite and infinite media and handles both complete and partial particle dissolution. It is shown that interfacial reactions can have a strong effect on the dissolution kinetics, the solute concentration at the particle-matrix interface and the solute concentration profile in the matrix.     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。     

Experimental determination of thermal conductivity of apple and potato at different moisture contents

Thermal conductivity of apple and potato samples was measured by means of a specifically designed apparatus based on Fitch's method. The thermal conductivity was determined at various moisture contents at the sample mean temperature of 30 °C. As expected the conductivity decreases with the decrease in moisture content. Thermal conductivity data were correlated with moisture content using a straight line.