TEM Studies of High Temperature Corrosion Behaviour of TiAl Intermetallics with Surface Modifications

The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl₃ diffusion coating was studied in an environment of H₂/H₂S/H₂O at 850^oC. The kinetic results demonstrate that the TiAl₃ coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al₂O₃ scale on the surface of the TiAl₃‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800^oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate.     

Performance limitation due to statistical Raman crosstalk in a WDM system with multiple-wavelength bidirectionally pumped Raman amplification

A general theoretical model of statistical Raman crosstalk and its impact on system performance in a multiwavelength bidirectionally pumped Raman fiber amplifier (RFA) is developed for the first time, where we have taken modulation statistics, dispersion-induced pulse walk-off and signal-induced pump depletion into account. Two kinds of statistical Raman crosstalk, from signal-induced forward-pump depletion and from signal-signal Raman interaction, are included in one model. Formulas for normalized Raman crosstalk, Raman crosstalk-induced relative intensity noise spectral density, and its variance and system performance impact in terms of Q penalty are presented for both a single-span system and a dispersion-compensated multispan wavelength-division-multiplexed (WDM) link. Based on these formulas, we numerically investigate the impact of Raman crosstalk on system performance in a three-wavelengths bidirectionally pumped 40 /spl times/ 40-Gb/s WDM system for various fiber types. In addition, Raman crosstalk in a four-wavelength bidirectionally pumped RFA was experimentally measured. The results agree well with our theory.     

求解二维结构-声耦合问题的一种直接方法

本文基于传递矩阵法(TMM)和虚拟边界元法(VBEM)，提出了一种求解在谐激励作用下二维结构-声耦合问题的直接法。文中对任意形状的二维弹性环建立了一阶非齐次运动微分方程组，便于用齐次扩容精细积分法求解，对于含有任意形状孔穴的无穷域流体介质的Helmholtz外问题，采用复数形式的Burton-Miller型组合层势法建立了虚拟边界元方程，保证了声压在全波数域内存在唯一解。根据叠加原理并结合最小二乘法，提出了一种耦合方程的直接解法，由于该方法不存在迭代过程，因而具有较高的计算精度和效率。文中给出了二个典型弹性环在集中谐激励力作用下声辐射算例，计算结果表明本文方法较通常采用的混合FE／BE法更为有效。     

Adaptive agents and multiagent systems

New information systems and recent applications (grid computing, Web Services, and so on) are often distributed, large-scale, open, heterogeneous, and characterized by a dynamic environment. To model these complex systems, researchers have spent much effort during the last few years on multiagent systems. The aim is to model complex distributed systems as a set of (possibly organized) software agents that interact in a common environment. The decomposition of a system into a number of agents lets the system react and adapt better in a changing environment. Moreover, organized structures ("social" structures) can emerge from interactions between agents, which in turn constrain and coordinate the agents' behavior. A multiagent system takes its metaphors of interaction from social systems rather than using the metaphor of the isolated thinker that early artificial intelligence researchers preferred. An important issue when dealing with this increasing complexity is to build adaptive agents and multiagent systems. Agents and multiagent systems must be aware of their own capabilities and of changes to other agents and their environment. To remain effective, agents must be able to adapt their structures and knowledge while they execute.     

The First Template‐Free Growth of Crystalline Silicon Microtubes

A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.