Low-temperature synthesis of nanocrystalline ZnGa2O4:Tb phosphors via the Pechini method

The synthesis of trivalent terbium doped ZnGa₂O₄ nanosized new phosphors by the Pechini method was reported. Well-crystallized ZnGa₂O₄:Tb³⁺ phosphors were obtained at low-temperature about 550 °C. The phosphors formed porous agglomerates which consist of spherical nanocrystallites with a uniform size at about 30 nm. The photoluminescence of the phosphors included both the luminescence of ZnGa₂O₄ host and characteristic emission of Tb³⁺, and the excitation spectra showed an energy transfer from the host lattice to the activator. The Tb³⁺ emission from the phosphors prepared by the Pechini process was more intensive than that of phosphors by solid-state reaction process.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.     

基于多维空间的商务协同要素分析

运用四维空间分析方法,引入时间压缩策略、战略成本管理、标杆管理和协同效应等原理,将网络协同商务链置于时间维、经济成本维、性能维和可持续发展维等多维空间中进行多元素分析和运筹。指出企业间资源、信息与业务的协同能力依赖于时间、成本、性能以及持续竞争优势等多个约束因素的协调。     

CIMS/CIPS中的现场总线

本文主要涉及现场总线定义，现场总线的特点，发展现场总线的必要性，现场总线的发展历程，现场总线的标准化及现场总线产品的开发等内容     

Development and Verification of the Equilibrium Strategy for Batteries in Electric Vehicles

The inconsistency of the cells in a battery pack can affect its lifespan,safety and reliability in the electric vehicles.The balanced system is an effective technique to reduce its inconsistency and improve the operating performance.A hybrid equilibrium strategy based on decision combing battery state-of-charge (SOC) and voltage has been proposed.The battery SOC is estimated through an improved least squares method.An equalization hardware in loop (HIL) platform has been constructed.Based on this HIL platform,equilibrium strategy has been verified under the constant-current-constant-voltage (CCCV) and dynamic-stress-test (DST) conditions.Experimental results indicate that the proposed hybrid equalization strategy can achieve good balance effect and avoid the overcharge and over-discharge of the battery pack at the same time.     

万全变电站5022断路器交流耐压中放电故障分析

通过对一起500kV断路器交流耐压中击穿事故的分析,得出该断路器制造及安装过程中应该注意的问题,并提出了该型断路器安装过程中应增加的检查工艺。     

预应力砼井字梁结构测试分析

在预应力双向网格井字梁屋盖施工中，对井字梁的预应力摩擦损失、锚具变形、钢筋内缩、弹性压缩和反拱及挠度进行了实测，以检验梁中建立的有效预应力能否达到设计要求，并与理论值进行比较。     

直流输电线路故障对电信线路感应的计算

直流输电线路对电信线路的危险影响、影响机理和计算方法,国内外资料及文献中尚无系统的介绍,我国也尚无统一的计算、设计标准。为便于工程设计,可以采用理论计算与实测对比相结合的方法推导出的简化公式进行计算。     

树脂浸渍补充增密对C/C复合材料摩擦磨损性能的影响

将CVD预增密至不同初始密度的C／C复合材料进行树脂浸渍／炭化补充增密至1.85g/cm^3，热处理后进行热物理性能的检测和不同刹车压力的摩擦磨损试验。结果表明，树脂浸渍／炭化是一种行之有效的快速致密化手段，所得制品的可石墨化性较好，导热性能也满足国外同类产品的要求；摩擦磨损试验和扫描电镜（SEM）观察结果表明，低一压力下形成的磨屑粒度明显大于高压下的磨屑，因而低压下的摩擦数高于高刹车压力下的摩擦系数。低压下的树脂炭对摩擦磨损的影响相对较大。     

微机辅助设计广播天线阵

随着广播事业的迅速发展，中波广播的定向发射将很快在我国提上日程。由于天线阵综合的工作量和对经验的依赖都比较大，非专门工作者殊难进行。本文提出的借助微机辅助设计的方法，对天线阵有一般了解的人员即可用其设计广播天线阵。