mc-Si:H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

氧化锌颗粒膜电阻响应-恢复特性研究

测试了氧化锌颗粒膜电阻响应-恢复特性，讨论了颗粒形态，加热电压、环境气氛、气氛浓度和注入方式等因素对电阻响应-恢复特性的影响。结果表明，随着加热电压的升高，电阻响应-恢复的速度和程度明显加大；断续注入时颗粒膜电阻值的响应随着浓度的增加逐步减弱．     

基于MAX6361的掉电保持电路的设计

三星公司推出的微处理器S3C44BOX在嵌入式系统中得到了广泛应用．本文提出了由S3C4480X．IS62WV25616BLL和MAX6361组成的掉电保持电路的设计原理．重点介绍了MAX6361微处理器监控电路的工作特性。此电路可实现电源监控．处理器复位、电源自动切换及掉电时的数据保持等功能。     

可靠性预计方法及思考

本文介绍了可靠性预计的目的,并对当前较为常见的可靠性预计模型或方法做了比较和说明,也对造成可靠性预计局限性的原因做了分析,最后对在可靠性工程工作中对待可靠性预计的态度做了探讨.     

基于VHDL实现单精度浮点数的加／减法运算

研究了单精度浮点数加／减法的结构及其设计方法，并在Aldec公司的Active—HDL软件环境下，采用VHDL语言进行设计，并进行了仿真验证，计算精度可以达到10^-7。     

尼龙6/改性双马来酰亚胺共混物的制备

将尼龙6与改性双马来酰亚胺熔融共混形成合金以提高其热稳定性能.用转矩流变仪考察了尼龙6/改性双马来酰亚胺共混体系熔融反应过程中的流变行为,用TG-DSC测试了共混物的热性能.结果表明:熔融共混时,2组分间的化学反应进行很快,改性双马来酰亚胺用量增加,共混物的熔融粘度增大,温度或转速升高,平衡转矩降低;改性双马来酰亚胺可明显改善尼龙6的高温热稳定性能,当尼龙6与改性双马来酰亚胺的质量比为20/1时,共混物在236-340℃温度范围内有很好的热稳定性.     

基于互信息域的L2S接口方法研究

分析了基于互信息域的有效信噪比映射的L2S(link level to system level)接口方法,研究了信道相关带宽对接口复杂度的影响,在不明显降低预测准确度的前提下,验证了利用信道相关带宽来简化接口计算复杂度的可能性。     

新霍构造东翼Es_3~(3-4)储层特征及其影响因素分析

阐述了新霍构造东翼Es_3~(3-4)的储层特征,分析了影响储层孔隙发育的主要因素,认为储层压实作用强烈,原生孔隙不发育,而异常高压和有机质热演化造成溶蚀作用发育形成的次生孔隙是该区主要的储集空间;次生孔隙发育于3600～3900m深度段。在次生孔隙研究基础上,预测了下一步勘探方向。