A Simple Method for Millimeter-Wave Finline Balanced Mixer Design Using Three-Dimensional Field Simulation Software

In this paper, a simple method for millimeter-wave finline balanced mixer design using three-dimensional field simulation software has been proposed. The method can be widely used to design the diode-based circuits, especially for the circuit structures with orthogonal field in some specific hybrid integrated circuits which are unavailable to be designed using the circuit simulator. In these circuits, the power directly at diodes is correlated to the input reflection coefficient. The diodes mounted on the finline circuits are defined as impedance boundary in the commercial computer-aided design (CAD) tool High Frequency Structure Simulator (HFSS) model, and hence simulation with the use of HFSS can be implemented to optimize the input matching network of the finline circuits for transferring maximum power to the diodes. Two finline balanced mixers at U-band using commercial GaAs Schottky diodes have been designed and fabricated to validate this method. Matching structures at the radio frequency (RF) port have been employed for a better return loss and a lower conversion loss. Experiment results are presented and show good agreement with simulation data. The proposed method has proven to be useful for the design of millimeter-wave mixers in finline technique.     

基于PCI Express总线的数据采集设备实现

PCI Express是最新的总线和接口标准,具有数据传输速率高,支持点对点传输以及热插拔等特点.首先,介绍PCI Express总线的发展与体系构架.然后结合采用Xilinx公司的FPGA与PHY器件设计采集设备的过程,详细介绍硬件系统的电路设计,以及采用Xilinx Pipe Core实现PCI Express物理层、链路层、传输层和使用winDriver开发简单的驱动程序.结合PCI Express总线设计的采集设备,整体性能可以显著提高,其必将取代以往各种总线的数据采集设备.     

基于S3C2440的嵌入式Linux系统移植

针对嵌入式系统的应用和开发的需要,提供在ARM嵌入式平台上移植Linux系统的方法。在对Linux内核体系的研究基础上,分析往ARM平台上移植Linux需要的工作,可以提高系统的设计水平,缩短开发时间。ARM9选用的是三星公司的S3C2440,Linux内核版本号为2.6.30.4。介绍了嵌入式系统移植的主要过程,包括U-boot的移植与修改、Linux内核的配置和编译、根文件系统的定制。移植后Linux系统在ARM平台上运行良好。实验结果证明该方法是可行的,同时对其他嵌入式系统开发有一定的参考意义。     

激光冲击对中高温服役条件下镍基合金K417显微硬度的影响

为研究中高温环境下的激光冲击强化效果,采用功率密度8.5GW/cm2、脉冲宽度10ns的强激光对K417镍基合金冲击改性,利用维氏硬度法测试其在700℃、800℃、900℃保温后的显微硬度值。结果表明中高温保温后,激光冲击硬化效果有所减弱,但不同温度下激光冲击区域的平均硬度均明显大于未冲击区域;深度方向硬度近似呈指数形式衰减,硬化层深度随温度的增加呈减小趋势;单个光斑径向硬度分布与激光空间分布特性导致的等离子体冲击波不均匀相关。研究表明在800℃以下,激光冲击有效提高了K417的综合性能指标。     

核磁共振陀螺反馈环路中滤波器的影响研究

为了分析核磁共振陀螺中129Xe自旋振荡器的振幅和频率特性,建立了相应的半经典模型,其中分别采用密度矩阵和经典电磁理论描述核自旋系综和反馈系统。然后,根据自激振荡的自洽条件推导了用于描述自旋振荡器的振荡方程。进一步,利用旋转波近似和慢变振幅近似将振荡方程化简为自洽方程组,它由分别用于描述自旋振荡器振幅和频率的振幅方程和频率方程构成。基于上述自旋振荡器的半经典模型,研究了带通滤波器对自旋振荡器振幅和频率的影响。仿真结果表明,对核磁共振陀螺的典型参量,反馈环路设计不当导致的自旋振荡器频移可达亚μHz。该研究对提高基于自旋振荡器的核磁共振陀螺性能具有一定的参考价值。     

不同表面预处理对有机电致发光显示器性能的影响

从生产角度研究了基板表面的预处理工艺对OLED性能的影响,分别用UVOzone、氧Plasma以及两者相结合的方式对基板进行表面处理,并按照生产工艺制作器件,从接触角、方阻以及光电特性等测试结果对各种表面处理的样品进行比较。结果表明以上处理都改善了器件性能,不同程度提高了器件的清洁度、亮度和发光效率,其中UVOzone和氧Plasma结合的方式处理效果最为显著,器件在10V时亮度达到79920cd/m2,比其他两种处理方式亮度提高约25%。     

一种新的解映射算法的推导和实现

本文在一种16QAM,64QAM,256QAM的解映射算法启发下,提出了新的适合32QAM和128QAM的解映射算法,并在此基础上,给出了适合DVB-C接收机的多QAM解映射结构.然后在FPGA中实现和仿真.最后通过比较说明,相对于传统的查找表解映射方法,提出的解映射算法可以明显减少资源使用率.     

单片集成式氮化镓基发光二极管的设计与制造

We report a new monolithic structure of GaN-based light-emitting diode(LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode(MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.     

基于偏振度椭球的PMD补偿方法的研究

分析了PMD椭球的三个轴随PMD的变化规律,建立了以偏振度椭球的短轴作为PMD补偿的反馈信号的PMD补偿系统模型,并通过数值模拟对一阶和二阶PMD进行了补偿,结果表明采用这种方法能同时有效地补偿一阶及二阶PMD。