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针对杜儿坪矿井下68310工作面采煤机自带的CAN总线通信无法满足长距离远程通信要求的问题,在分析CAN总线和串口总线通信方式原理的基础上,提出在CAN总线增设第三方转换模块实现远距离通信的方案。实践应用效果表明:优化改进后的远距离通信方案能保障对68310工作面井下采煤机与地面远程集中控制台之间的数据传输及工况监测,为实现工作面的智能化开采奠定基础。 相似文献
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A novel cantilever array-based bio-sensor was batch-fabricated with IC compatible MEMS technology for precise liver cancer bio-marker detection. A micro-cavity was designed in the free end of the cantilever for local antibody-immobilization, thus the adsorption of the cancer biomarker takes place only in the local region of the cantilever instead of the whole lever, and the effect of adsorption-induced k variation can be dramatically reduced. These structural features offer several advantages: high sensitivity, high throughput, high mass detection accuracy, and a portable system. In addition, an analytical model has been established to eliminate the effect of the adsorption-induced lever stiffness change and has been applied to the precise mass detection of the cancer biomarker AFP; the experimentally detected AFP antigen mass by the sensor (7.6 pg/mL) is quite close to the calculated one (5.5 pg/mL), two orders of magnitude better than those of the fully antibody-immobilized cantilever sensor. These approaches can promote real applications of the cantilever sensors in cancer diagnosis. 相似文献
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考虑到轧辊是轧机的重要组成部件,轧辊的质量直接影响轧机成形产品的质量,研究了基于图像识别的轧辊表面破损检测系统.利用高清摄像机采集轧辊图像;使用滤波去噪算法去除图像中的干扰因素;使用图像分割技术分割图像,以提高图像的识别效率;使用模板匹配的方法进行破损的识别;使用拉普拉斯方法对图像进行锐化处理,从而使得轧辊破损区域的边... 相似文献
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The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q) MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (〉 1000 ℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices. 相似文献
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