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An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. 相似文献
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在总结某炼油厂调度员工作经验的基础上,提出了一种“人工智能化思维”编制生产调度计划的方法,确定了有关的规则,并在计算机上加以实现。 相似文献
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SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with opti- mized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2. 相似文献
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采用磁控溅射FeSi2、Si靶加后续退火法在6H-SiC(0001)衬底上成功制备了β-FeSi2薄膜.采用XRD、SEM、AFM和Raman等测试手段对β-FeSi2薄膜的结构及形貌等特性进行了表征。XRD结果表明,当退火温度从500℃增加到900℃时,溅射的非晶FeSi2薄膜逐步相变为β-FeSi2薄膜,且其最佳的退火温度为900℃;SEM测试结果表明β-FeSi2薄膜表面较为平整、致密,β-FeSi2/6H-SiC界面清晰陡峭,薄膜表面粗糙度(RMS)为0.87nm;β-FeSi2薄膜的光学带隙为0.88eV。由此获得了在6H-SiC衬底上制备多晶β-FeSi2薄膜的最佳工艺条件。 相似文献
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反应堆压力容器、蒸汽发生器、稳压器等核岛主设备工艺流程复杂,关键部件生产周期长,生产组织难度大,其中长周期工序是影响产品交货期的最主要因素。从时间组织、空间组织和过程组织三个方面,对核岛主设备长周期工序的生产组织提出建议。 相似文献
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通过理论分析与计算机仿真方法对1 200 V 4H-碳化硅(SiC)结势垒肖特基(JBS)二极管进行了设计与研究,实现了1 200 V/2 A,1 200 V/5 A及1 200 V/30 A三种等级管芯的研制。鉴于非均匀场限环(FLR)保护效率存在对工艺偏差敏感的问题,所设计各电流等级的管芯均采用均匀FLR作为终端结构。经测试,所研制管芯在反偏压为1 200 V时,漏电流均不大于3μA,且1 200 V/2 A,1 200 V/5 A及1 200 V/30 A三种等级管芯的通态电阻分别为790mΩ,360 mΩ及59.3 mΩ。 相似文献
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对浮结型及超结型肖特基势垒二极管静态及动态特性进行了解析及模拟.静态特性通过解析击穿电压与导通电阻之间的关系得到.反向恢复特性通过二极管电容随反向电压变化关系解释,商用混合模拟器MEDICI模拟结果表明浮结结构具有软恢复特性,软度因子为0.949.超结结构恢复特性较硬,软度因子为0.7807.当考虑这两种耐压结构时,必... 相似文献
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利用直流磁控溅射系统在p型SiCGe和载玻片衬底上沉积ITO薄膜,并研究其ITO与p型SiCGe的接触特性与p型SiCGe制备条件、退火温度、退火时间的关系.结果表明:p型SiCGe制备条件的不同影响着退火使ITO/p型SiCGe的接触由线性变为非线性或者由非线性变为线性;随着退火温度的增加,接触电阻先减小后增加,这是由于退火过程中,接触界面层发生了反应以及接触势垒高度与宽度发生了变化造成的.当退火温度为500℃时,其接触电阻达到最小值,此时ITO薄膜的最高透过率高达90%,方块电阻为20.6Ω/□. 相似文献
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