新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

Cif2000平台下的核磁共振测井解谱方法研究

介绍了在Cif2000多井解释平台下的核磁共振解谱方法与编程实现。解谱采用加入平滑因子后在特征矩阵的奇异值分解中截去小的非零奇异值的方法，可以在低信噪比时得到稳定的弛豫谱，在油田实际应用中证明了该方法的有效性。根据该方法在Cif2000平台上编制了完整的解谱处理程序，可以直接用于油田的生产实际。     

第三代短波自动链路建立系统特性分析及仿真实现

分析了第三代短波自动链路建立系统的工作特性及技术特点，并对系统仿真实现的原则及一些细节问题进行了较深入的探讨，同时对仿真实现中涉及的链路质量分析（LQA）算法进行了研究。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

用面向对象方法建立人事信息系统

应用先进的面向对象设计方法开发了技术中心人事信息系统，采用E－R数据库建立了数据库逻辑模型，通过VFP语言设计了友好直观的用户使用界面。实践表明，新开发的人事信息系统速度快、容量大，操作性强，对实现信息管理标准化，尤其是人力资源的动态管理和科学决策具有很强的实用性。     

Interfacial strength and chemistry of additive-free silicon nitride ceramics brazed with aluminium

Two kinds of additive-free silicon nitride ceramics were brazed with aluminium; one was with as-ground faying surfaces and the other was with faying surfaces heat-treated at 1073K for 1.8 ksec in air. The heat-treatment of the silicon nitride ceramics formed a silicon oxynitride layer on the faying surfaces and increased the brazing strength of the joints. A silica-alumina non-crystalline layer and a β′-sialon layer were formed successively from the aluminium side at the interface of the joints. The heat-treatment which made the former layer thicker is a necessary process in making reliable, strong brazed joints.     

In situ formation of multi scale reinforcing phases to improve performance of Al2O3-SiC C castables

In order to improve the physical properties and slag corrosion resistance of refractory materials for hot metal pretreatment, different contents of composite metal powders (CMP) were introduced into Al2O3-SiC-C refractory castables. The effect of CMP on the microstructure, physical properties and slag corrosion resistance of Al2O3-SiC-C refractory castables were studied. The results show that the multi scale reinforcing phases including flake crystals, rod shaped fibers, filamentous fibers and whiskers are in situ formed in the samples with addition of CMP, which result to the improvement of the cold modulus of rupture and cold crushing strength. When the addition of CMP is 6 wt.%, the high temperature modulus of rupture increases by 231%, the thermal shock resistance increases by 77% after thermal shock by water cooling 5 times and the percentage of the slag resistant area reduces by 37.2%.     

改性生物质作为型煤黏结剂的研究

探讨了用NaOH改性生物质秸秆作为型煤黏结剂的可行性,考察了NaOH溶液浓度对生物质改性的影响以及生物质添加量、无机物(MgO和MgCl2)添加量对型煤机械强度、防水性能和着火温度的影响。研究结果表明,NaOH改性液的质量分数为1.0%~2.0%时,制得的生物质型煤有较高的机械强度;生物质添加量在2%~20%时,随生物质添加量的增加,机械强度增加,着火温度降低,但防水性较差;而在生物质型煤中加入适量无机黏结剂后,型煤有很高的浸水强度,表现出优越的防水性能。     

校园文化与大学发展

校园文化看不见、摸不着，却支撑着大学的脊梁，它潜移默化影响和造就一所大学的文化品格。它不仅对大学发展起着重要作用，也是大学发展的重要内容，是大学建设的题中应有之义。为此，需要建设民主和谐，具有学术自由、人文精神和创新精神的校园文化，并将它提高到学校战略发展的高度来看，以校园文化整合学校发展战略。     

多孔薄膜荫罩热变形的有限元仿真设计

荫罩的热变形使电子束产生着屏偏移 ,进而导致了色纯变坏。本文采用大型软件ANSYS对 1 5英寸荫罩进行了热变形的有限元仿真 ,从而得到了电子束的着屏偏移。建立了包括阴极射线管 (CRT)里所有部件的完整的有限元模型。荫罩被建为无孔连续薄壳的模型 ,对它的表面导热系数和表面弹性模量作了等效的计算。考虑了弹簧片的预应力以及弹簧片和销钉的连接。这样可使我们的分析模型更接近真实情况。本文给出了 50 0、1 0 0 0、1 0 0 0 0s时的热变形和电子束着屏偏移。分析表明 :电子束着屏偏移的最大值发生在 50 0s左右。利用这种分析方法及研究结果可指导新型荫罩的设计和研制。