Synthesis and characterization of neodymium doped ceria nanocrystalline ceramic structures

In this study, a new method to synthesize neodymium doped ceria ceramic nanopowders by the electrospinning of the hybrid polymers solution of their composite precursor was put forward. Calcined and sintered nanopowders were characterized by FT-IR, XRD, BET, SEM, and AFM techniques. According to the XRD analysis, the obtained powders are single phase and independent of the dopant concentration in the range investigated. The crystallite sizes were calculated using Scherrer equation. Moreover, lattice parameters, dislocation densities and microstrain values were calculated. BET results show that the increase of the neodymium doped content decrease the surface area of the composite powders, confirming the highly ordered micro and mesostructure. SEM and AFM results show that the samples have spherical grains. According to the surface roughness measurements, the increase in the amount of neodymium and the decrease in the amount of cerium decreased the surface roughness.     

Anodic behaviour of fulvestrant and its voltammetric determination in pharmaceuticals and human serum on highly boron-doped diamond electrode using differential pulse adsorptive stripping voltammetry

The electrochemical oxidation of fulvestrant was made on highly boron-doped diamond electrode using differential pulse adsorptive stripping voltammetry. The highest current intensities were obtained by applying +1.10 V during 150 s for boron-doped diamond electrode. For boron-doped diamond electrode, linear responses were obtained for the concentrations between 1 × 10⁻⁶ and 8 × 10⁻⁵ M in standard samples and between 1 × 10⁻⁶ and 4 × 10⁻⁵ M in serum samples. The repeatability of the method was 0.55 RSD% for differential pulse adsorptive stripping voltammetry. The analytical values of the method are demonstrated by quantitative determination of fulvestrant in pharmaceutical formulations and human serum, without the need for separation or complex sample preparation, since there was no interference from the excipients and endogenous substances. Selectivity, reproducibility, and accuracy of the developed methods were demonstrated by recovery studies.     

Synthesis and characterization of boron-doped Bi2O3 - La2O3 fiber derived nanocomposite precursor

Boron doped poly(vinyl) alcohol/ bismuth - lanthanum acetate (PVA/Bi-La) nanofibers were prepared by electrospinning using PVA as a precursor. The effect of boron doping was investigated in terms of solution properties, morphological changes and thermal characteristics. The fibers were characterized by FT-IR, XRD, SEM and BET. The addition of boron did not only increase the thermal stability of the fibers, but also their diameters, which yielded stronger fibers. XRD analyses showed that boron doping increased the peak intensities and indicated that the boron doping enhanced the crystallite size. Moreover, no shifts were noticed in diffraction angles for boron doped and undoped samples. Therefore, boron doping did not significantly alter the lattice spacing. The SEM micrograph of the fibers showed that the addition of boron resulted in the formation of cross linked bright surfaced fibers. Also, grain diameters of boron doped and undoped nanocrystalline sintered powders were measured as 170 nm and 120 nm respectively. The BET results show that boron undoped and doped Bi₂O₃-La₂O₃ nanocrystalline powder ceramic structures sintered at 800 °C have surface areas of 20.44 m²/g and 12.93 m²/g, respectively.     

Physico-chemical and sensory properties of chips produced using different lupin (Lupinus albus L.) flour formulations and cooking methods

Development of novel snack foods is an important area of research, and different ingredients are being tested to develop and process new formulations. In this study, lupin chips prepared using different formulations (hulled lupin, whole lupin, wheat and corn flours) were cooked using baking and frying, and changes in the sensory and colour parameters, acrylamide contents, fat absorption, peroxide number and p-anisidine values of the final products were studied. Lupin flour significantly changed p-anisidine value of chips. Addition of lupin flour and cooking methods affected the colour, fat absorption and peroxide values. Significant differences in chemical properties of chips made from whole and hulled lupin flours were also observed. Acrylamide was not detected in all the formulations studied. The lupin chips have increased brightness (L*), no acrylamides, reduced peroxide and p-anisidine values and acceptable sensory quality; hence, this ingredient is recommendable for use in snack foods.     

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Current–voltage (I–V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80–400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (Φ_B0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly dependent on temperature. The forward bias semi-logarithmic I–V curves for different temperatures have an almost common cross-point at a certain bias voltage. The values of Φ_B0 increase with the increasing temperature whereas those of n decrease. Therefore, we have attempted to draw Φ_B0 vs. q/2kT plot in order to obtain evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean value of BH and standard deviation (σ₀) were found to be 0.974 eV and 0.101 V from this plot, respectively. Thus, the slope and intercept of modified vs. q/kT plot give the values of and Richardson constant (A^?) as 0.966 eV and 118.75 A/cm²K², respectively, without using the temperature coefficient of the BH. This value of A^* 118.75 A/cm²K² is very close to the theoretical value of 120 A/cm²K² for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of Au/PVA/n-Si (1 1 1) SBDs can be successfully explained on the basis of the Thermionic Emission (TE) theory with a GD of the BHs at Au/n-Si interface.     

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied in the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si SDs were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The effects of interface state density (N_ss) and series resistance (R_s) on C-V characteristics were investigated in the wide temperature range. It was found that both of the C-V-T and G/w-V-T curves included two abnormal regions and one intersection point. The dielectric constant (ε″), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni, Zn-doped)/n-Si SDs. Experimental results show that the values of ε′, ε″ and tan δ are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures.     

Anomalous Peak in the Forward-Bias <Emphasis Type="Italic">C</Emphasis>–<Emphasis Type="Italic">V</Emphasis> Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/<Emphasis Type="Italic">n</Emphasis>-Si(111) Structures

In this study, the temperature-dependent mean density of interface states (N_SS)(N_{\rm SS}) and series resistance (R_S)(R_{\rm S}) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current–voltage (I−V) and admittance spectroscopy [capacitance–voltage (C–V) and conductance–voltage G/ω–V] methods. The other main electronic parameters such as zero-bias barrier height (F_B0)(\Phi_{{\rm B}0}), ideality factor (n), and doping concentration (N _D) are also obtained as a function of temperature. Experimental results show that the values of F_B0\Phi_{\rm{B}0}, n, R _S, and N _SS are strongly temperature dependent. The values of F_B0\Phi_{\rm{B}0} and R _S increase with increasing temperature, while those of n and N _SS decrease. The C–V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N _SS, R _S, and temperature. The experimental data confirm that the values of N _SS, R _S, temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.     

Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

The dielectric properties and AC electrical conductivity (σ_ac)of the (Ni/Au)/Al_0.22Ga_0.78N/AlN/GaN heterostructures, with and without the SiN_x passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε′), dielectric loss (ε′′), loss tangent (tanδ), σ_ac and the real and imaginary part of the electric modulus (M′ and M′′) were found to be a strong function of frequency and temperature. A decrease in the values of ε′ and ε′′ was observed, in which they both showed an increase in frequency and temperature. The values of M′ and M′′ increase with increasing frequency and temperature. The σ_ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the ε′ and σ_ac.