Mechanism of secondary gel-particle formation in viscose

Conclusions Experimental and calculated data have been given which support the mechanism for formation of secondary gel particles in viscose.According to this mechanism, the formation of gel particles takes place in the case where the time for diffusion exchange between the main stream and an immobile wall layer is greater than the time for coagulation.VNIIPV, Mytishchi. Translated from Khimicheskie Volokna, No. 2, pp. 22–24, March–April, 1992.     

The controlling effect of 0.05% hydrogen sulfide gaseous atmosphere on the accelerated fatigue failure of coated MM-002 nickel-base superalloy at 650 °C

A systematic study was carried out aimed at evaluating the environmental effects of H₂S containing environment on the creep-fatigue failure of coated undirectionally solidified MM-002 nickel-base superalloy at high temperature. The cyclic loading conditions were constant and consisted of creep tension and plastic compression following the CP-mode of the strain range partitioning method. The results obtained have shown that although the pack cementation coating used showed adequate resistance under the combination of cyclic loading and oxidizing environments, this resistance was not evident under the H₂S containing atmosphere. In fact, it was found that even an amount as little as 0.05% H₂S had an extremely detrimental effect on the creep-fatigue life of the coated superalloy at 650 °C. The crack initiation and propagation in the H₂S environment was controlled by an aggressive sulphidation attack ahead of the crack tip. This was demonstrated by the formation of low melting eutectic sulfides at the plastic zone ahead of the crack tip, causing an accelerated transdendritic cracking and premature failure.     

Calculation of an electric field in metal-insulator-metal structures

A method is proposed for calculating an electric field in a thin piezoelectric wafer taking into account the injection of electrons from a metal electrode into an insulator. The static current-voltage characteristic of a metal-insulator-metal structure is given, along with the results of a comparison of calculations and experiment. Translated from Izmeritel'naya Tekhnika, No. 1, pp. 46–48, January, 1996.     

Direct algorithms for data analysis in the location of sources of radiation from measured differences in distance: Model experiment

Results are presented from a model (numerical) experiment performed to check the efficiency of three groups of direct data-analysis algorithms to be used in satellite location of ground or ocean sources of radiation. The methodology behind the experiment is also explained. Translated from Izmeritel'naya Tekhnika, No. 12, pp. 40–44, December, 1996.     

Measurement of the dielectric constant of highly absorbing polar liquids at microwave frequencies

Nomograms are given for claculating the dielectric constant and dielectric loss of polar liquids by measuring the standing wave ratio for an infinitely thick layer of fluid and the layer thickness at which wave reflection is minimum. Translated from Izmeritel'naya Tekhnika, No. 2, pp. 46–47, February, 1996.     

A generalized model for the interaction between hydrogen and structural defects of the solid phase

A generalized mathematical model of the interaction between hydrogen and structural defects in metals is analyzed. The temporal dependence of hydrogen permeation flow is examined for three typical cases. The approximations to the general equation for hydrogen permeation flow obtained enable one to determine the interaction from experimental data. The extreme values of permeation flow are analyzed. A method for determining the kinetic parameters of interaction for a given permeation flow is suggested. The conclusion is made that, within the framework of the generalized model, it is possible to establish the mechanism of hydrogen trapping.Dnepropetrovsk Institute of Chemical Engineering, Dnepropetrovsk. Translated from Fiziko-Khimicheskaya Mekhanika Materialov, Vol. 29, No. 5, pp. 25–29, September–October, 1993.     

Silicon-substrate microelectrode arrays for parallel recording ofneural activity in peripheral and cranial nerves

A new process for the fabrication of regeneration microelectrode arrays for peripheral and cranial nerve applications is presented. This type of array is implanted between the severed ends of nerves, the axons of which regenerate through via holes in the silicon and are thereafter held fixed with respect to the microelectrodes. The process described is designed for compatibility with industry-standard CMOS or BiCMOS processes (it does not involve high-temperature process steps nor heavily-doped etch-stop layers), and provides a thin membrane for the via holes, surrounded by a thick silicon supporting rim. Many basic questions remain regarding the optimum via hole and microelectrode geometries in terms of both biological and electrical performance of the implants, and therefore passive versions were fabricated as tools for addressing these issues in on-going work. Versions of the devices were implanted in the rat peroneal nerve and in the frog auditory nerve. In both cases, regeneration was verified histologically and it was observed that the regenerated nerves had reorganized into microfascicles containing both myelinated and unmyelinated axons and corresponding to the grid pattern of the via holes. These microelectrode arrays were shown to allow the recording of action potential signals in both the peripheral and cranial nerve settings, from several microelectrodes in parallel     

Analysis of the IgE-epitope of Der f 2, a major mite allergen, by in vitro mutagenesis

Der f 2 is a major mite allergen composed of 129 amino acid residues. To determine the major epitopes on Der f 2 recognized by human IgE antibodies, artificial mutations were introduced to Der f 2 protein. The IgE-binding activity of Der f 2 was significantly decreased by deletion of 10 amino acids at the N-terminus or nine amino acids at the C-terminus. Site-directed mutagenesis with a single amino acid replacement by Ala or Leu in both N- and C-terminal regions as well as a central portion was performed to generate 42 single-site mutations. Amino acid replacement around a disulfide bond of Cys8-Cys119 caused a marked decrease in IgE-binding activity. Furthermore, a distinct decrease in IgE-binding was also caused by Ala-substitution close to a disulfide bond of Cys73-Cys78 and by mutations of a few charged residues. From these results, it was concluded that the two disulfide-forming regions of Der f 2 and several charged residues are important for forming major epitope structures recognized by human IgE antibodies.