变量喷雾系统中果树冠幅检测方法研究

果树的变量喷雾系统要求快速实时地检测果树的冠幅,现有数字图像处理 检测果树冠幅存在不能实现实时检测且误差大或者不能检测果树实际冠幅值的问题,本文用 参照标准板与每株样本果树一起拍摄,通过求每张图像单位像素宽度的方法求取对应样本果 树的实际冠幅;再将采用该数字图像检测的果树冠幅与采用手持激光测距仪检测的冠幅标准 值作比较分析。试验结果表明：检测的50 株样本果树中,74%的样本数利用图像处理方法 所检测冠幅值与参考值的相对差值都小于20%,对果树冠幅数字图像检测值与标准值进行回 归分析,R2=0.7406,因此,在变量喷雾系统中采用图像处理方式检测果树冠幅是可行的。     

Intense Yellow Photoluminescence from Silicon Oxynitride Films Prepared by Dual Ion Beam Sputtering

In this work, results on the study of the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual-ion-beam co-sputtering system. The XRD and TEM results show that the deposited films have an amorphous structure. In the XPS result, we find N 1 s spectra consist of one symmetric single peak at 397.8 eV, indicating that the nitrogen atoms are mainly bonded to silicon. It is in agreement to the result of FTIR. In SiOxNy films, an intense single PL peak at 590 nm is observed. Furthermore, with the increase of the N content in the SiOxNy films, the intensity of the PL peak at 590 nm increases a lot. The PL peak of 590 nm is suggested to originate from N-related defects.     

不同形貌CuO的制备与表征

以硝酸铜和六次甲基四胺为反应物,采用常压加热的方法,在90℃制备得到了CuO.通过改变铜源(氯化铜、乙酸铜和硫酸铜)和溶剂的极性(不同体积比的乙醇和水的混合溶剂)探究了不同因素对反应产物形貌的影响.利用X-射线衍射仪(XRD)和扫描电镜(SEM)对产物进行物相和形貌表征.结果表明,不同条件下制备得到了球形、梭形和花状等形貌的CuO.铜源和溶剂的极性均对产物形貌具有一定影响.     

海洋红酵母色素不同提取方法的比较

以酵母干粉为原料.主要研究用不同的方法从红酵母中提取类胡萝卜素,比较了DMSO法、酸热法、机械法、细胞自溶法和微波法这五种不同的提取方法.结果表明,各种不同提取方法的色素产量分别为:DMSO法(493.240,g/g)>酸热法(135.15μg/g)>机械法(66.57μg/g)>微波法(45.58μg/g)>细胞自溶法(O),所以选择DMSO法作为红酵母色素提取的最佳方法.     

梳齿式自动仿形残膜捡拾机的设计及性能试验

为使设计的残膜捡拾机适合山区垄作烟地、能实现自动仿形并有较高的捡拾性能。设计了分段自动仿形的梳齿安装架,分析得到弹齿的最佳入土角范围为15°~45°。利用正交试验方法,以梳齿间距（横向A、纵向B）及机具行进速度（C）为研究对象,分析各因素对收膜率及积土量的影响。试验结果表明在无垄地机具的最佳结构为横向齿间距（90 mm、70 mm和50 mm）,纵向齿间距440 mm,机具在低速（3.5 km/h）状态下积土量较小,在高速（7.5 km/h）状态下捡拾率提高。在有垄地的最佳结构为横向齿间距（180 mm、140 mm和50 mm）,纵向齿间距为440 mm,机具在高速（7.5 km/h）状态下积土量较小,在低速（3.5km/h）状态下捡拾率提高。      

Cu掺杂浓度对ZnO薄膜的结构、透光性和电学性质的影响

采用射频磁控溅射方法在导电玻璃和石英衬底上制备了未掺杂和不同Cu掺杂量的ZnO薄膜.XRD显示,适当的Cu掺杂增强了ZnO的(002)衍射峰的强度;用紫外分光光度计测量了样品的透光性,结果显示,随掺杂量的增加,其透光性减弱,但在Cu掺杂量为9.6%时其透光性还在60%以上.用四探针测量了样品的表面电阻率,薄膜的电阻率随Cu掺杂量的增加而增加.     

沉积气压对磁控溅射制备ZnO薄膜的结构与光学性能影响

采用CS-400型射频磁控溅射仪在Si(111)和石英基底上成功的制备了ZnO薄膜,分别用XRD、SEM、紫外-可见光分光光度计和荧光分光光度计表征样品的结构和光学性质.实验表明,采用射频磁控溅射制备的ZnO薄膜具有六角纤锌矿结构的(002)峰和(101)峰的两种取向.在沉积气压>1.0Pa时所制备的ZnO薄膜具有(002)择优取向,并且十分稳定.SEM图表明,ZnO薄膜颗粒大小较为均匀,晶粒尺寸随着气压升高而变小,沉积气压不同时,薄膜样品的生长方式有所差异.在400～1000nm范围内,可以看出除O.5Pa下制备的ZnO薄膜外,其余ZnO薄膜在可见光区域的平均透过率超过80%,吸收边在380nm附近,所对应的光学带隙约为3.23～3.27eV,并随着沉积气压上升而变大.ZnO薄膜的PL谱上观察到了392nm的近紫外峰和419nm的蓝峰;沉积气压对Zno薄膜的发光峰位和峰强有影响.     

基于LBP-GLCM特征融合的烤烟油分等级预测模型

烤烟油分含量评价对烟叶等级的评判具有重要影响,为了对烤烟油分等级进行科学预测,创建烤烟微观纹理与油分含量的关系模型,论文以贵州安顺平坝烟区烤烟样品为研究对象,基于LBP—GLCM（融合灰度共生矩阵与局部二进制模式）特征融合提取烤烟表面纹理特征,结合BP人工神经网络模型,对烤烟油分等级进行预测。结果表明：采用LBP-GLCM算法结合BP神经网络对烤烟油分等级预测正确识别率为93.33%,模型相关系数为0.91486,可见该算法对于烤烟油分等级预测具有一定的优势。     

The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

In this paper, N-doped diamond-like carbon(DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition(HWP-CVD) with the Ar/CH_4/N_2 mixed gas. The surface morphology, structural and mechanical properties of the N-doped DLC films were investigated in detail by scanning electron microscopy(SEM), x-ray photoelectron spectroscopy(XPS), Raman spectra, and atomic force microscopy(AFM). It can be observed from SEM images that surface morphology of the films become compact and uniform due to the incorporation of N. The maximum of the deposition rate of the films is 143 nm min~(-1), which is related to the high plasma density. The results of XPS show that the N incorporates in the films and the C-C sp~3 bond content increases firstly up to the maximum(20%) at 10 sccm of N_2 flow rate, and then decreases with further increase in the N_2 flow rate. The maximum Young's modulus of the films is obtained by the doping of N and reaches 80 GPa at 10 sccm of N_2 flow rate, which is measured by AFM in the scanning probe microscope mode. Meanwhile, friction characteristic of the N-doped DLC films reaches a minimum value of 0.010.     

非晶SiOx:C薄膜的发光特性研究

采用双离子束溅射法制备了SiOx:C非晶薄膜,在室温下可观察到薄膜样品有强的420nm(紫光)、470nm(蓝绿光)的光致发光(PL).分别对样品在不同温度下退火后,PL测试显示随着退火温度的升高420nm处的峰带逐渐增强变为强的发光峰;470nm处的发光峰位来自于硅基薄膜中富硅引起的中性氧空位缺陷(O3≡Si-Si≡O3),是由与氧原子配位的二价硅的单态-单态之间的跃迁所致;420nm范围的峰带可能来自于薄膜中由C单质、以及Si、O、C三者组成的一个复杂结构.