离子注入对CuxS薄膜的影响

讨论了ＣｕｘＳ薄膜经氮离子注入后对薄膜的特性影响，铜硫化合物薄膜是经两次蒸发制备在玻璃上。实验发现氮离子束注入引起了ＣｕｘＳ薄膜中的铜与硫成分的改变，明显观察到样品中的铜对硫化的值随注入了子束强度的增加而变大。经过透射光谱的分析对比证实了确有新的ＣｕｘＳ状态出现。     

基于InGaAs渐变缓冲层的太阳能电池的研究

This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ＂transition layer＂ and the ＂cover layer＂ to accommodate the 3.9% mismatch. No threading dislocations were observed in the uppermost part of the epitaxial layer stack when using a transmission electron microscope （TEM）. We analyze the factors which influence the saturation current. Simulation data shows that the cells grown by metal organic vapor phase epitaxy （MOVPE） have considerable open circuit voltage, short circuit current, and photoelectric conversion efficiency. Finally we propose that InP may have great development potential as a substrate material.     

硫化铜薄膜的两次蒸发制备

在玻璃基底上通过两次蒸发制备CuXS薄膜.硫蒸气在温度150-210℃时与淀积在衬底上的铜直接反应,生成CuXS薄膜.实验发现150℃时生成无定形的CuS,呈黄绿色,而在200℃左右生成多晶状的CuS薄膜,颜色为深绿色.对薄膜的光学、电学特性进行了研究.