电子封装用金刚石/铜复合粉体的制备及表征

设计粉末镀膜专用样品台,采用溅射沉积法在金刚石颗粒表面分别预沉积Cu膜和Ti/Cu双层膜,然后用化学镀铜法增厚铜层制备了金刚石/铜复合粉体。结果表明,金刚石表面经溅射沉积改性后,无需敏化活化就可化学镀铜制备金刚石/铜复合粉体,避免了Sn、Pd等杂质的引入;增加Ti作为过渡层可使化学镀铜层更致密,抗热冲击性更好。     

南水北调东线江苏段泵站工程电缆标准化整理探索与实践

针对已投入运行的泵站工程电缆敷设存在问题,在水利部提出“水利工程补短板”的要求下,南水北调东线江苏段泵站工程率先对电缆标准化整理进行探索,从2018年开始,通过三年时间完成了14座泵站工程电缆整理工作,消除了由电缆敷设不规范引起的安全隐患,提升了工程管理水平,电缆标准化整理工作得到水利行业内的高度认可。     

锌硼共掺对铌酸钾钠基压电陶瓷结构和性能影响的研究

采用传统固相制备工艺,在烧结温度960～980℃成功制备了致密度较高、综合电学性能优异的Li0.06(Na0.535K0.48)0.94Nb0.94Sb0.06O3+x%(质量分数)ZnO+B_2O_3(LNKNS-xZB2)无铅压电陶瓷。研究了ZnO+B_2O_3掺杂量对LNKNS-xZB2陶烧结性能、相结构、微观结构及电学性能的影响。结果发现,ZnO+B_2O_3的掺杂不仅改善了LNKNS-xZB2陶瓷的烧结性能,而且改变了陶瓷的相结构,在掺杂量x=1.2～1.6范围内形成四方-正交两相共存的多晶型相界(PPB)。在准同型相界处(x=1.6),陶瓷具有优异的电学性能:压电常数d33、机电耦合系数kp、介电常数εr、机械品质因数Qm、剩余极化强度Pr和相对密度ρr分别为285pC/N,35.4%,954,205,29.5μC/cm~2和96.3%。为铌酸钾钠基压电陶瓷的低温致密化烧结提供了新的思路。     

地下岩石隧道下穿既有高层建筑物安全性分析

在某城市地下隧道下穿既有建筑物工程中,考虑了既有建筑物的剩余安全度,制定了穿越处既有建筑物的风险控制指标和标准,并依据该市实际地层条件、建筑物等效刚度、等效荷载、地下隧道CRD开挖工法、施工错距等因素,建立FLAC~(3D)数值计算模型,模拟了隧道穿越建筑物的全过程,对既有建筑建筑物的沉降、倾斜规律进行预测分析。分析表明:四号导洞开挖施工,隧道拱顶最大沉降值为4.94mm,建筑物基底最大沉降量和倾斜值均满足控制标准,桩基嵌入深度不在隧道开挖引起的岩土塑性区影响范围之内。     

TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al_2O_3 and multi layers of TiN film structure

A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact of the deposition process and post treatment condition on the MIS capacitor＇s time-dependent dielectric breakdown （TDDB） performance is also studied. With an optimized process, it is confirmed by Auger electron spectroscopy and secondary ion mass spectrometry analysis that the Al（CH3）3/O3-based ALD Al2O3 dielectric film is carbon free and the hydrogen content is as low as 9 × 1019 cm-3. The top electrode TiN is obtained by multi-layered TiCl4/NH3 CVD deposited TiN followed by 120 s post NH3 treatment after each layer. This has higher diffusion barrier in preventing impurity diffusion through TiN into the Al2O3 dielectric due to its smaller grain size. As shown in energy dispersive X-ray analysis, there is no chlorine residue in the MIS capacitor structure. The leakage current of the capacitor is lower than 1 × 10-12 A/cm2. No early failures under stress conditions are found in its TDDB test. The novel MIS capacitor is proven to have excellent reliability for advanced DRAM technology.     

Y10T输出齿轮轴的感应淬火

齿轮在传递动力及改变速度的运动过程中,啮齿面之间既有滚动,又有滑动,而且齿轮根部还受到脉动或交变弯曲应力的作用。因此,齿面和齿根表面处需要一定强度和硬度,以防止齿轮在不同应力作用下失效。而对齿轮进行表面感应淬火,可以使得齿顶耐磨性及齿根抗弯曲疲劳强度都得到提高。     

Electronic structures and properties of pure vanadium

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氢气处理对FeZrNbBCu纳米晶合金磁性的影响

利用XRD、振动样品磁强计及阻抗分析仪研究了氢对纳米晶FeZrNbBCu合金的微观结构及软磁特性的影响.纳米晶合金吸收大量的氢原子,从而导致晶格常数膨胀.吸氢后导致饱和磁化强度略有升高、磁化率的降低以及弛豫频率的急剧上升.故氢气处理能够提高材料的高频软磁特性.     

Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar^＋ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.     

Fe85Hf787Cu1非晶合金的非等温晶化动力学

利用非等温方法研究了Fe15Hf7B4Cu1非晶合金的晶化过程,晶化过程分两步进行,并利用修正的Kissinger方程计算了晶化动力学参数.第一个晶化过程是±-Fe的形成过程,其激活能为299±10kJ/tool,Avrami指数为1.3,是以预先形核的核心为基础的三维扩散控制生长方式为主;第二个晶化过程为残余非晶中Fe3B的形成过程,其激活能为423±12kJ/mol,Avrami指数为3.1,是以形核率逐渐减小的界面控制生长方式为主.