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为了提高密集波分复用(DWDM)薄膜窄带滤光片制备的成品率,讨论了用于DWDM薄膜窄带滤光片在镀制过程中的监控方法及误差,采用Monte Carlo允差分析原理分析用于DWDM窄带滤光片膜层的容差,以便选择更易制备的膜系;计算膜层的Mac leod极值灵敏度,得到所选膜系各个膜层的误差要求;模拟光学监控过程和计算膜层导纳,能够得到膜层制备过程中膜层之间膜厚的补偿关系。实验表明,据此制定的膜厚监控策略,对于DWDM窄带滤光片膜层的制备和保证成品率是非常关键的。 相似文献
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The surface oxidative characterization of Liquid Phase Epitaxy (LPE) HgCdTe epilayer has been studied by X-ray Photoelectron Spectroscopy (XPS) and Scanning Electron Microscopy (SEM). HgCdTe surface is exposed by various processing steps. After measurement and analysis, we draw a conclusion that the native oxide film can be reduced and removed by the solution of lactic acid in ethylene glycol after being etched by bromine in absolute ethyl alcohol. The result shows the main optical and electrical parameters have not been changed after the treatment and the processing method given here can successfully remove the native oxides of LPE HgCdTe epilayer to obtain a clean surface. It indicates that the pre-treatment before HgCdTe surface passivation can affect the passivant/HgCdTe interface properties. 相似文献
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采用低压金属有机气相外延设备生长并制作了 1 5 5 0 nm Al Ga In As- In P偏振无关半导体光放大器 ,有源区为 3周期的张应变量子阱结构 ,应变量为 - 0 .4 0 % .器件制作成脊型波导结构 ,并采用 7°斜腔结构以有效抑制腔面反射 .经蒸镀减反膜后 ,半导体光放大器的自发辐射功率的波动小于 0 .3d B,3d B带宽为 5 6 nm.半导体光放大器小信号增益近 2 0 d B,带宽大于 5 5 nm.在 1 5 0 0~ 1 5 90 nm波长范围内偏振灵敏度小于 0 .8d B,峰值增益波长的饱和输出功率达7.2 d Bm. 相似文献