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Effects of NH3 rapid thermal annealing(RTA) on the interface and electrical properties of Gd-doped HfO2(GDH)/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower(3.9×10-4A/cm2).The effective permittivity extracted from the C-V curves was~14.1 and ~13.1 for samples without and with RTA,respectively. 相似文献
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玻璃粉粘结剂对丝网印刷Zr-V-Fe吸气剂薄膜吸气性能的影响 总被引:1,自引:1,他引:0
利用丝网印刷技术制备Zr-V—Fe吸气剂薄膜。以Pb玻璃粉作为薄膜与基片的粘结剂,研究了三种不同退火温度下制备的Zr—V—Fe吸气剂薄膜的吸气性能,通过XRD,FESEM,EDS及吸气性能测试,分析讨论了薄膜的相组成、表面形貌和表面成分对吸气性能的影响。结果表明,退火温度变化会使薄膜表面Pb含量发生改变,从而引起吸气剂薄膜的吸气性能发生变化,在玻璃粉的熔点温度(350℃)进行退火,所得的薄膜具有更多清洁有效的表面,此时玻璃粉对薄膜的吸气性能影响最小,薄膜的吸气性能最佳。 相似文献
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研究了K4169高温合金在各种工艺条件下及向熔体中加入复合细化剂时的晶粒组织.结果表明.降低浇注温度和加入复合细化剂可以明显细化冷凝后基体的晶粒和提高铸件断面等轴晶的比例。在通常的浇注温度1400℃下加入复合细化济.对合金熔体进行或不进行过热处理时.可使圆柱锭的品粒分别细化至ASTM11.7级和ASTM3.2级:断面等轴晶的比例分别达96%和99%以上.当浇注温度为1420℃,加入复合细化利并对合金熔体进行过热处理时,可使圆住锭晶粒细化至ASTMM10.5级,断面等轴晶的比例达90%以上,提出了晶粒细化的机理并对晶粒细化后断面等轴晶比例增大的现象进行了分析。 相似文献
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1 INTRODUCTIONTherecentdiscoveryofsuperconductivityinthebinaryintermetalliccompoundMgB2 [1] hasstimulatedworldwideexcitementinthescientificcommunityandresultedinaflurryofbothexperimentalandtheoreti calwork[2 8] .Thesuperconductingtransitiontemper atureTcofMgB2 is 39K ,whichisalmosttwiceaslargeastherecordvaluesofTcfortheconventionalintermetallicsuperconductors .Itsstructureisverysimple ,consistingofalternatinglayersofMgatomsandBatoms .HalleffectmeasurementsshowthattheHallcoefficientof… 相似文献
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利用宏观-微观耦合的模型和热焓法处理结晶潜热,用外节点直接差分法数值计算技术,模拟了Al-2wt%Cu合金凝固过程的冷却曲线和晶粒组织特征,并与实验结果进行了比较。结果表明:冷却速率越大的凝固区域,再辉出现得越早,平台凝固段越短。模拟所得冷却曲线和晶粒组织特征同实测值吻合较好。 相似文献
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采用原子层沉积技术(ALD)制备了Nd_2O_3掺杂的HfO_2高k栅介质薄膜(Hf-Nd-O),通过X射线光电子能谱(XPS)研究了薄膜中元素的成分、结合能及化学计量比,分析了Nd_2O_3掺杂后薄膜中氧空位浓度和界面层成分的变化;通过测量薄膜的光致发光(PL)图谱,比较了Nd_2O_3掺杂前后铪基薄膜中的氧空位浓度变化,分析了Nd_2O_3掺杂对HfO_2薄膜中氧空位浓度的影响;通过高分辨率透射电子显微镜(HR-TEM)研究了薄膜厚度及形态;制备了Pt/HfO_2(Hf-Nd-O)/IL/n-Si/AgMOS结构,应用半导体参数测试仪得到薄膜的电容-电压(C-V)和漏电流密度-电压(J-V)特性曲线。结果表明,Nd_2O_3掺入HfO_2薄膜后,整个铪基薄膜体系的氧空位减少,Hf-O键的结合能提高,Hf和O的原子比更接近理想的化学计量比(1∶2);在同样物理厚度与界面制备工艺条件下,Nd_2O_3的掺入使得MOS结构的饱和电容值提高,EOT降低,V_g=(V_(fb)+1)V时,Nd_2O_3掺杂的HfO_2薄膜的漏电流密度为8.7×10~(-3)A·cm~2,相比于纯HfO_2薄膜的3.5×10~(-2)A·cm~2有明显降低,电学性能整体得到提高。 相似文献
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The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and inter-face state density (7×1011 cm-2) were achieved from Au/Ti/GHO/Ge/Al capacitors. 相似文献