首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   211篇
  免费   3篇
  国内免费   8篇
电工技术   13篇
综合类   43篇
化学工业   6篇
金属工艺   96篇
矿业工程   16篇
能源动力   4篇
无线电   2篇
一般工业技术   21篇
冶金工业   21篇
  2023年   1篇
  2022年   1篇
  2021年   1篇
  2020年   1篇
  2019年   1篇
  2018年   8篇
  2015年   4篇
  2014年   9篇
  2013年   10篇
  2012年   13篇
  2011年   16篇
  2010年   15篇
  2009年   15篇
  2008年   35篇
  2007年   26篇
  2006年   16篇
  2005年   8篇
  2004年   9篇
  2003年   22篇
  2002年   9篇
  2001年   1篇
  1998年   1篇
排序方式: 共有222条查询结果,搜索用时 547 毫秒
21.
新型阴极钢棒对铝电解槽电热场的影响   总被引:2,自引:0,他引:2  
采用数值仿真的方法对应用一种可减小铝液中水平电流的新型阴极钢棒的420 kA级铝电解槽进行三维计算,分析这种新型阴极钢棒对铝液中水平电流、槽电压以及电解槽温度分布的影响。结果表明:新型阴极钢棒可有效地减小铝液中X方向的水平电流;新型阴极钢棒中绝缘材料的加入在一定程度上增大了槽电压;当钢棒和钢棒糊接触不是很好时,新型阴极钢棒电解槽比传统阴极钢棒电解槽更容易出现阴极炭块和钢棒连接区域温度过高的情况。该计算结果可为铝电解槽在应用此种新型阴极钢棒后所获得的节能效果以及个别槽在运行过程中出现的问题提供理论依据。  相似文献   
22.
采用电沉积方法在SnO2玻璃基底上制备了Co-Se化合物薄膜.研究了薄膜形成的电化学机理和电沉积工艺对薄膜组成与形貌的影响,并表征了薄膜的结构与光学性质.结果表明:Co2+受预沉积Se的表面诱导还原或直接与H2SeO3的六电子还原反应产物H2Se发生反应形成Co-Se化合物;沉积电位、沉积温度和pH值均显著影响电沉积Co-Se化合物薄膜的形貌与成分;在沉积电位为?0.5V(vs SCE)、沉积温度为50℃和pH值为2.0时可制备出表面致密平整且呈六方晶型结构的富硒CoSe薄膜,其光吸收系数达到1×105 cm?1,直接带隙宽度为(1.53±0.01)eV,接近单结太阳电池光吸收层材料的理论最佳值.  相似文献   
23.
器件的工程化制造作为超级电容器研发的主要内容之一,是决定超级电容器能否产业化的关键所在。以自制活性炭为原料,制备了2.5V/10F有机系超级电容器,考察了不同黏接剂体系、导电剂含量、黏接剂含量、轧制压力对超级电容器容量与内阻的影响,并对所制备的超级电容器进行了性能检测。检测结果表明:在1.6A的放电电流时,电容器能量密度为2.96Wh/kg,在2.5V恒压1h后,电容器漏电流小于0.15mA,在5000次循环后,超级电容器容量与500次循环时相比,衰减量小于3%。  相似文献   
24.
采用液态锂离子电池工艺制备了204468型大容量LiFePO4锂离子电池。利用XRD、SEM及充放电方法对电池的电极表面形貌和电池电化学性能进行表征和测试。结果表明:在面密度为3.0g/m^2,压实密度为2.0-2.2g/cm^3、电池脱气时间为48h的条件下,204468型LiFePO4锂离子电池首次放电比容量达到138.8mAh/g,0.5C循环100周容量保持率95%,5C放电容量达到86%以上。  相似文献   
25.
张治安  赖延清  李劼  刘业翔 《电池》2008,38(2):92-95
以高性能活性炭为电极材料,采用锂离子电池和铝电解电容器的制作工艺,制备出尺寸为Φ12 mm×20 mm的卷绕型超级电容器.通过BET比表面积、扫描电镜、激光粒度和振实密度对活性炭进行了分析;通过恒流充放电、循环伏安和交流阻抗等方法,对超级电容器的充放电特性、功率特性、电容量、内阻、漏电流和循环寿命等进行了研究.活性炭的比表面积为1 770 m2/g,总孔容为0.831 6 ml/g,平均孔径为1.880 nm,平均粒径为5.19 μm,振实密度为0.41g/cm3.制备的超级电容器为2.5 V/6.0 F,直流内阻为150 mΩ,交流内阻为58 mΩ,功率特性和循环性能良好.  相似文献   
26.
超级电容器用离子液体电解质的研究进展   总被引:3,自引:0,他引:3  
离子液体具有热稳定性好、不挥发、电导率高、电化学窗口宽等优点,在超级电容器中作为电解质有着很好的应用前景.对离子液体作为超级电容器电解质的最近研究进展进行了介绍.  相似文献   
27.
H+ doped polyaniline nanofibre (PH) was synthesized by interfacial polymerization and polyanilines doped with Li salt (PLI and PHLI) were prepared by immersing emeraldine base (EB) and H+ doped polyaniline in 1 mol/L LiPF6/(EC-EMC-DMC), respectively. PH, PLI and PHLI were all characterized by scanning electron microscopy (SEM) and Fourier transform infrared (FT-IR) spectrometry. With 1 mol/L LiPF6/(EC-EMC-DMC) as electrolyte, PH, PHLI and PLI were used as the active materials of symmetric non-aqueous redox supercapacitors. PLI shows the highest initial specific capacitance of 120 F/g (47 F/g for PH and 66 F/g for PHLI) among three samples. After 500 cycles, the specific capacitance of PLI remains 75 F/g, indicating the good cycleability.  相似文献   
28.
The CaO-doped Cu/(NiFe2O4-10NiO) cermet inert anodes were prepared by the cold isostatie pressing-sintering process, and their corrosion resistance to Na3AlF6-K3AlF6-Al203 melt was studied. The results show that the relative density of 5Cu/(NiFe2O4-10NiO) cermet sintered at 1 200 ℃ increases from 82.83% to 97.63% when 2% CaO (mass fraction) is added. During the electrolysis, the relative density of cermet inert anode descends owing to the chemical dissolution of additive CaO at ceramic grain boundary, which accelerates the penetration of electrolyte. Thus, the corrosion resistance to melts of Cu/(NiFe2O4-10NiO) cermet inert anode is reduced. To improve the corrosion resistance of the cermet inert anode, the content of CaO doped should be decreased and the technology of cleaning the ceramic grain boundary should be applied.  相似文献   
29.
The effects of contents of AlF3 and Al2O3, and temperature on electrical conductivity of (Na3AlF6-40%K3AlF6)- AlF3-Al2O3 were studied by continuously varying cell censtant (CVCC) technique. The results show that the conductivities of melts increase with the increase of temperature, but by different extents. Every increasing 10 ℃ results in an increase of 1.85 × 10^-2, 1.86× 10^-2, 1.89 × 10^-2 and 2.20 × 10^-2 S/cm in conductivity for the (Na3AlF6-40%K3AlF6)-AlF3 melts containing 0%, 20%, 24%, and 30% AlF3, respectively. An increase of every 10 ℃ in temperature results an increase about 1.89× 10^-2, 1.94 × 10^-2, 1.95 × 10^-2, 1.99× 10^-2 and 2.10× 10^-2 S/cm for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts containing 0%, 1%, 2%, 3% and 4% Al2O3, respectively. The activation energy of conductance was calculated based on Arrhenius equation. Every increasing 1% of AlF3 results in a decrease of 0.019 and 0.020 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3 melts at 900 and 1 000 ℃, respectively. Every increase of 1% Al2O3 results in a decrease of 0.07 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts. The activation energy of conductance increases with the increase in content of AlF3 and Al2O3.  相似文献   
30.
The effects of contents of AlF3 and Al2O3,and temperature on electrical conductivity of (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 were studied by continuously varying cell constant (CVCC) technique.The results show that the conductivities of melts increase with the increase of temperature,but by different extents.Every increasing 10 ℃ results in an increase of 1.85×10-2,1.86×10-2,1.89×10-2 and 2.20×10-2 S/cm in conductivity for the (Na3AlF6-40%K3AlF6)-AlF3 melts containing 0%,20%,24%,and 30% AlF3,respectively.An increase of every 10 ℃ in temperature results an increase about 1.89×10-2,1.94×10-2,1.95×10-2,1.99×10-2 and 2.10×10-2 S/cm for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts containing 0%,1%,2%,3% and 4% A12O3,respectively.The activation energy of conductance was calculated based on Arrhenius equation.Every increasing 1% of AlF3 results in a decrease of 0.019 and 0.020 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AIF3 melts at 900 and 1 000 ℃,respectively.Every increase of 1% Al2O3 results in a decrease of 0.07 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts.The activation energy of conductance increases with the increase in content of AlF3 and Al2O3.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号