1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计

优化设计了 1.5 5 μm In Ga As P/In Ga As P张应变量子阱偏振不灵敏半导体光放大器的结构 .利用 k· p方法计算了多量子阱的价带结构 ,计算中考虑了 6× 6有效质量哈密顿量 .从阱宽、应变、注入载流子密度等方面计算了量子阱模式增益的偏振相关性 .     

1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计

优化设计了1.55μm InGaAsP/InGaAsP张应变量子阱偏振不灵敏半导体光放大器的结构.利用k*p方法计算了多量子阱的价带结构,计算中考虑了6×6有效质量哈密顿量.从阱宽、应变、注入载流子密度等方面计算了量子阱模式增益的偏振相关性.     

选择外延MOVPE的表面迁移

研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律,以及InGaAsP表面边缘尖角随Ⅴ/Ⅲ比的变化.结果表明,随着掩模宽度的增大,In组分增大,Ga 组分减少;随着Ⅴ/Ⅲ比的增大,InGaAsP 材料表面趋向平坦.对材料边缘尖角的变化规律作出了合理解释,研制出表面平坦的外延材料,为器件研制提供了有效的方法.     

Highly controllable ICP etching of GaAs based materials for grating fabrication

Highly controllable ICP etching of GaAs based materials with SiCl₄/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 = 10 W, RF2 = 20 W and a high ratio of Ar to SiCl₄ flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm² area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.