Techniques for high-frequency integrated test and measurement

This paper describes techniques for the on-chip measurement of high-frequency and/or high-bandwidth electrical phenomena in ultra large-scale integration environments. The techniques rely on the integration of multiple compact and robust electronic test devices, or cores, at various locations within an integrated circuit. The cores consist primarily of signal generators that approximate the output of a sigma-delta modulator using finite repetitious bit patterns and a small set of highly robust analog components. They are capable of digitizing on-chip signals at gigahertz rates even using low-cost manufacturing processes. Simple communication between the multiple cores enables the migration of many "board-level" type measurements down to the chip level.     

Sequential Spectrum Analysis of the Sideband Components of Digital Amplitude-Modulated Signals

It is shown that, for the spectrum analysis of digital quasi-periodic signals, one must use a procedure based on approximating the sequence of data readouts by a first-order trigonometric polynomial with a varying frequency of its harmonic functions.     

The Shunting of Current and the Resultant Variation of Voltage in Channels of Plasmatrons with Self-Adjusting Length of Electric Arc

The characteristics of pulsation processes in dc plasmatrons with the cathode located in the channel center and the anode in the form of a cylindrical or a conical channel wall are investigated in plasmas of argon and nitrogen at atmospheric pressure. The fast Fourier transform of signals and their subsequent computer processing are used to obtain the dependences of the frequency of fluctuations of the arcing voltage on the working parameters of the plasmatron, namely, the electric arc current, the flow rate of plasma-forming gas, and the channel diameter. For plasmatrons with the self-adjusting length of the electric arc, analysis is performed of the mechanism of reclosing of the anode region of the arc, i.e., of the electric arc shunting associated with the stretching of the current filament by a flow of gas and with the electrodynamic interaction of different filament regions. A formula is derived which defines the dependence of the characteristic frequency of fluctuations of the arcing voltage on the external parameters of the problem, namely, the arc current, the flow rate of the working gas, and the characteristic channel diameter. It is demonstrated that the pattern of the dependence of the frequency of voltage fluctuations on the gas flow rate may vary with the values of the parameter of magnetohydrodynamic interaction. The formula generalizes the experimental results of numerous researchers obtained in a wide range of variation of the external parameters.     

On the effect of spatial variances in historical rainfall time series to CSO performance evaluation.

Historical, high-resolution rain series are the backbone of modern combined sewer overflow (CSO) structure design. These rain series are the input to the computational estimation of the performance of the measures with respect to CSO pollution abatement. However, those historical precipitation measurements are available at only a few locations. Frequently rain series have to be used from gauging stations at a significant distance. In order to judge and to compensate for this influence an estimate between rain characteristics and combined sewer outflow (CSO) performance indicators would be useful. In this paper such correlations have been sought for a collection of 37 rain series covering large areas of Europe. It was found that the mean annual rain volume can explain most of the variances for the performance indicators Number of overflows and CSO volume. For explaining the spatial differences in the efficiency of the CSO structure another rain characteristic, i.e. the maximum event with a return period of one year, is to be used.     

EBSP study of the annealing behavior of aluminum deformed by equal channel angular processing

Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.     

Nanoscale Crystallization in Amorphous Fe–P–Mn Alloys

Mössbauer effect measurements and physicochemical analysis demonstrate that annealing of amorphous Fe–P–Mn alloys leads to the formation of a nanocrystalline structure.     

Fabrication, assembly, and characterization of molecular electronic components

One of the ultimate miniaturizations in nanotechnology is molecular electronics, where devices will consist of individual molecules. There are many complications associated with the use of molecules in electronic devices, such as the electronic perturbations in the molecule associated with being bonded to an electrode, how electrons traverse the metal-molecule junction, and the difficulty of macroscopically addressing single to very few molecules. Whether fabricating a test structure or a usable device, the use of self-assembly is fundamental to the fabrication of molecular electronic devices. We will discuss how to fabricate self-assembled monolayers into test assemblies and how to use intermolecular interactions to direct molecules into desired positions to create nanostructures and to connect functional molecules to the outside world. These assemblies serve as test structures for measurements on single or bundled molecules. The development of several experimental techniques, including various scanning probes, mercury drop junctions, break junctions, nanopores, crossed wires, and other techniques using nanoparticles have enabled the ability to test these structures and make reproducible measurements on single molecules. Many of these methods have been developed to test molecules with potential for integration into devices such as oligo (phenylene-ethynylene) molecules and other /spl pi/-conjugated molecules, in ensemble or single-molecule measurements.     

On optimal sequential prediction for general processes

This paper considers several aspects of the sequential prediction problem for unbounded, nonstationary processes under pth power loss /spl lscr//sub p/(u,v)=|u-v|/sup p/, 1相似文献