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31.
Popular biorthogonal wavelet filters via a lifting scheme and its application in image compression 总被引:2,自引:0,他引:2
Cheng L. Liang D.L. Zhang Z.H. 《Vision, Image and Signal Processing, IEE Proceedings -》2003,150(4):227-232
A technique using a lifting scheme is presented for constructing compactly supported wavelets whose coefficients are composed of free variables locating in an interval. An efficient approach-based wavelet for image compression is developed by selecting the coefficients of the 9-7 wavelet filter and associated lifting scheme. Furthermore, the rationalised coefficients wavelet filter that can be implemented with simple integer arithmetic is achieved and its characteristic is close to the well known original irrational coefficients 9-7 wavelet filters developed by A. Cohen et al. (Commun. Pure Appl. Maths., vol.45, no.1, p.485-560, 1992). To reduce the computational cost of image coding applications further, an acceleration technique is proposed for the lifting steps. Software and hardware simulations show that the new method has very low complexity, and simultaneously preserves the high quality of the compressed image. 相似文献
32.
湘中海相浅层湘冷1井酸压工艺研究及应用 总被引:2,自引:0,他引:2
湘冷1井具有气层埋藏浅(400m-500m)、纵向上裂隙发育的特点,属低孔、低渗的含泥质灰岩致密储层。大量室内实验和研究采用“前置液酸压+闭合酸化”工艺技术,并优选了相应降阻酸和闭合酸配方。通过酸压实现了该井工业油气流的突破,取得了明显的增产效果,为新区海相浅层气的开发探索出了一套成熟的改造增产措施。 相似文献
33.
Xue‐Yong Liu Xiao‐Bin Ding Zhao‐Hui Zheng Yu‐Xing Peng Albert S
C Chan C
W Yip Xin‐Ping Long 《Polymer International》2003,52(2):235-240
Amphiphilic magnetic microspheres ranging in diameter from 5 to 100 µm were prepared by dispersion copolymerization of styrene and poly(ethylene oxide) vinylbenzyl (PEO‐VB) macromonomer (MPEO) in the presence of Fe3O4 magnetic fluid. The effects of various polymerization parameters on the average particle size were systematically investigated. The average particle size was found to increase with increasing styrene concentration and initiator concentration. It also increased with decreasing stabilizer concentration and molecular weight of MPEO. The content of the hydroxyl groups localized in the microspheres ranged from 0.01 to 0.2 mmol g?1. © 2003 Society of Chemical Industry 相似文献
34.
从政策、城市与区域规划、环境、文化及其传承因素、基础设施等方面探析了高校新校区选址有关的主要影响因素,以满足高等学校大规模的扩建要求,促进高等教育的发展。 相似文献
35.
In this letter, we introduce and investigate a new problem referred to as the All Hops Shortest Paths (AHSP) problem. The AHSP problem involves selecting, for all hop counts, the shortest paths from a given source to any other node in a network. We derive a tight lower bound on the worst-case computational complexities of the optimal comparison-based solutions to AHSP. 相似文献
36.
37.
低温脂肪酶产生菌的筛选、鉴定及其部分酶学性质 总被引:15,自引:1,他引:14
从南极乔治王岛冻土来源的76株低温细菌中筛选到13株低温脂肪酶产生菌,对其中的BTsl0022菌株进行鉴定。通过生理生化特征、16s rDNA基因序列的同源性和系统发育分析发现,菌株RTsl0022属于假单胞菌属(Pseudomonas),但与已定名的假单胞菌有一定的差异,与未定名的Pseudomonas sp.PsB的亲缘关系最接近,故将其暂定名为Pseudomonas sp.BTsl0022。对该菌脂肪酶的酶学性质初步研究表明,酶的最适作用温度为24℃,对热敏感,60℃处理30min仅残留25%酶活性,酶的适宜作用pH范围在7.0~9.0,最适pH为8.0。 相似文献
38.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
39.
40.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献