Molecular Dynamics Simulation of MBE Growth of CdTe/ZnTe/Si

We simulate in three dimensions molecular beam epitaxial (MBE) growth of CdTe/ZnTe/Si using classical molecular dynamics. Atomic interactions are simulated with Stillinger–Weber potentials, whose parameters are obtained by fitting to experimental data or density function theory-calculated distortion energies of the component crystals. The effects of substrate temperature and atomic species flux ratios on epilayer morphology are investigated. The agreement between simulations and experiments suggests that this model has reasonable ability to predict the microstructures of CdTe/ZnTe/Si grown by MBE.     

Studies on protein and its high‐molecular‐weight subunit composition in relation to chapati‐making quality of Indian wheat cultivars

In order to predict the suitability of wheat for chapati making, 15 Indian wheat cultivars were studied for various protein characteristics in relation to chapati‐making quality. The cultivars varied considerably in their protein characteristics and chapati‐making potential. Results clearly indicated that both quantitative and qualitative characteristics of proteins influenced the chapati‐making potential of cultivars. Puffed height, the important qualitative parameter of chapati, was positively correlated with protein content (r = 0.62, p < 0.05), gluten content (r = 0.79, p < 0.01), sodium dodecyl sulphate (SDS) sedimentation value (r = 0.57, p < 0.05) and Glu‐1 quality scores of high‐molecular‐weight (HMW) subunits (r = 0.66, p < 0.01). Overall quality score of chapati was positively correlated with gluten content (r = 0.64, p < 0.01), SDS sedimentation value (r = 0.60, p < 0.05) and Glu‐1 score (r = 0.58, p < 0.05). HMW subunit composition varied considerably among cultivars. Cultivars having 5 + 10 subunits at the Glu‐1D chromosome, a protein content of about 130 g kg^?1 and SDS sedimentation value around 75 ml yielded excellent chapatis, while those having 2 + 12 subunits, a protein content of about 115 g kg^?1 and SDS sedimentation value around 55 ml resulted in poor chapatis. Interestingly, the presence of the 1BL/1RS chromosome in cultivars had no adverse effect on chapati quality. © 2003 Society of Chemical Industry     

DATA ACQUISITION SYSTEM FOR ARC-DRIVEN HF/DF CHEMICAL LASERS

The article focuses on the development of a data acquisition system (DAS) working in a noisy and hostile environment for an arc-operated hydrogen fluoride/deuterium fluoride (HF/DF) chemical laser. PC-based DAS has been configured using Advantech plug and play modules with fiber link connectivity. This article also focuses on implementation of an orifice-based precise gas flow control system. The plasma arc discharge in an arc heater/generator is essentially employed for inducing thermal dissociation of sulfur hexafluoride SF₆ for production of fluorine atoms, and DAS has been used for performance optimization of the composition of the lasing mixture by independently varying the flow rate, pressure, and temperature of its constituents. Since arc load is complex with high voltage transients and electromagnetic noise, an optical fiber link has been implemented for data transmission. This article also discusses digital output interface circuitry for various electro-pneumatic actuators/solenoid valves. The developed DAS has been used for monitoring and performance evaluation of parameters for 50 kW arc tunnel.     

4H-SiC RF power MOSFETs

A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz     

Site‐Controlled InGaAs Quantum Dots with Tunable Emission Energy

Semiconductor quantum‐dot (QD) systems offering perfect site control and tunable emission energy are essential for numerous nanophotonic device applications involving spatial and spectral matching of dots with optical cavities. Herein, the properties of ordered InGaAs/GaAs QDs grown by organometallic chemical vapor deposition on substrates patterned with pyramidal recesses are reported. The seeded growth of a single QD inside each pyramid results in near‐perfect (<10 nm) control of the QD position. Moreover, efficient and uniform photoluminescence (inhomogeneous broadening <10 meV) is observed from ordered arrays of such dots. The QD emission energy can be finely tuned by varying 1) the pyramid size and 2) its position within specific patterns. This tunability is brought about by the patterning of both the chemical properties and the surface curvature features of the substrate, which allows local control of the adatom fluxes that determine the QD thickness and composition.     

Effect of interface states on electron transport in 4H-SiCinversion layers

The effect of trapping in interface states on channel conductance and field-effect mobility in SiC MOSFETs is studied experimentally and theoretically. Hall effect measurements in n-channel MOS devices with varying densities of interface states were used to determine the effect of trapping on carrier mobility. The dependence of electron mobility on immobile interfacial charge density was quantified and was found to be similar to that in silicon, provided that the mobility is normalized to μ₀, the value in the absence of Coulomb scattering. A relationship has been established between the ratio of field-effect mobility to the actual carrier mobility and the density of interface states at the Fermi energy     

Preparation of poly(ε‐caprolactone)/poly(ε‐caprolactone‐co‐lactide) (PCL/PLCL) blend filament by melt spinning

Poly(ε‐caprolactone)/poly(ε‐caprolactone‐co‐lactide) (PCL/PLCL) blend filaments with various ratios of PCL and PLCL were prepared by melt spinning. The effect of PLCL content on the physical properties of the blended filament was investigated. The melt spinning of the blend was carried out and the as spun filament was subsequently subjected to drawing and heat setting process. The addition of PLCL caused significant changes in the mechanical properties of the filaments. Crystallinity of blend decreased with the addition of PLCL as observed by X‐ray diffraction (XRD) and differential scanning calorimetry (DSC). Scanning electron microscopy (SEM) revealed that the fracture surface becomes rougher at higher PLCL content. It may be proposed that PCL and PLCL show limited interaction within the blend matrix. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2012     

Comparison of Flux Pinning Mechanism in Laser Ablated YBCO and YBCO:BaZrO3 Nanocomposite Thin Films

Thin films of YBCO and YBCO:BaZrO₃ (BZO) nanocomposite have been deposited using the pulsed laser deposition technique. Substantial increase in critical current density (J _C ) and pinning force density (F _p ) of the nanocomposite thin films was observed. The possible pinning mechanism in YBCO:BZO nanocomposite thin films has been explored and compared with the pinning mechanism in pure YBCO thin film by studying the variation of J _C with magnetic field (B) and temperature. In the intermediate field regime (0.1–1 T), J _C follows B ^−α with nearly similar values of α for YBCO and YBCO:BZO nanocomposite thin films indicating similar pinning mechanism in both thin films. The variation of J _C with reduced temperature (t=T/T _C ) has been studied for both the films and it was observed that the mechanism of pinning in both YBCO and YBCO:BZO thin films is similar (δT _C pinning). The observed enhanced values of J _C and F _p of the nanocomposite thin film is attributed to the presence of BZO nanoparticles, which induces more defects due to lattice mismatch between YBCO and BZO leading to improved flux pinning properties of the nanocomposite thin film.