Optical properties of evaporated Ge20Se80−x Tl x thin films

Chalcogenide glasses with composition Ge₂₀Se_80–x Tl _x (x=10, 15, 20, 25, 35%) have been prepared by the usual melt-quenching technique. Thin films of the mentioned compositions have been prepared by the electron beam evaporation. In addition, another set taken from the composition ofX=30 at % with different thicknesses (d=14.7, 30.0, 56.5, 70.0, 101.0, 180.0 nm) have been taken into consideration. The X-ray diffraction (XRD) analysis revealed the amorphous nature of the prepared films. It was found that, in contrast to the optical gap (E _op), both the extent of the band tailing (B), and the band gap (E _e) increase with increasing thallium content. In other side,E _op showed thickness independency. The refractive index (n) showed obvious dependence on both composition and thickness also on the energy of the incident radiation.     

Thermal design method of bayonet-tube evaporators and condensers

The paper describes an effectiveness-NTU design method of bayonet-tube evaporators and condensers. Including the effect of the wall superheat on the shell-side film coefficient, and using an energy balance on the tube, differential equations for the steady-state fluid temperatures are formulated. Because of the nonlinear nature of the governing equations, the fourth-order Runge-Kutta method is employed to the solution of the finite difference equations. The results are iterated with the combination of integration techniques. An upper bound to the numerical error being ±5% the fluid temperature distribution as well as the exchanger effectiveness are determined, and presented as a function of the Hurd number, the number of heat transfer units and the flow arrangement. For flow entering through the inner tube, the temperature distribution displays the occurrence of a minimum at a point other than the tube-tip of the exchanger. In an extension of the analysis, an effort is made to illustrate the deviation of the results obtained by uniform film coefficient from the present study, and the differences are outlined.     

Comparison of Markov model and fault tree approach in determining initiating event frequency for systems with two train configurations

This study explores the use of Markov models in some areas of systems analysis in which time evolution of the system may be a significant factor in influencing the system reliability or availability. Comparisons are made between the Markov models and the time-averaged fault tree models for determining support system failure initiating event frequency in a nuclear power plant, for both power and shutdown conditions. Factors affecting consistency between the fault tree approach and the Markov model approach are studied for systems with common two train configurations. A correlation is developed to estimate the ratio between initiator frequencies through both approaches for a two parallel component system. Insights are developed as to when time averaged and simplified fault tree models support a good approximation to the more rigorous time-dependent Markov models.     

Scan performance of infinite arrays of microstrip patch elementsloaded with varactor diodes

The analysis and scanning characteristics of an infinite array of rectangular microstrip patches each loaded with a varactor diode is presented. The analysis is based on full-wave moment method theory and uses attachment modes to accurately model the current through the feed and the diode. The effect of the biased varactor diode on the scan performance is presented, and it is shown that the impedance mismatch caused by a scan blindness can be eliminated. Other characteristics are also given such as: the active element gain, the efficiency of each loaded microstrip element, and the level of cross polarization generated by the loading of the patch. The effect of the diode biasing level as well as the position of the diode on each radiating element on these scan characteristics is also considered     

Detection of Discordant Content Uniformity Observations and Compendial Compliance

A discordant observation is a data point whose value is drastically different from that of the rest of the members in the data set. In the context of content uniformity experiments, however, a discordant observation arises in two ways: (i) when the value of an observation is markedly distant from that of the other data points even though it is within the required compendial range, and (ii) when the value of an observation is outside the permissible compendial range. Several statistical tests for detecting one or more discordant observations are presented. Since discordancy distorts the symmetricity of the data, several tests of symmetricity are provided. Tests for detection of group discordancy induced by discordant samples are also included. The compendial requirements are explained in statistical terms. The impact of discordant observations on compendial compliance requirements is assessed. The statistical basis of the construction of compendial limits as well as the assumptions implicit in the construction is elaborated. The results of the statistical analysis of three content uniformity studies are appropriately interpreted.     

Human peripheral eosinophils express functional interferon-gamma receptors (IFN-gammaR)

In order to determine whether or not IFN-gammaR is associated with regulatory mechanisms on human eosinophil function, we examined the expression of functional IFN-gammaR on human peripheral eosinophils. In this study, peripheral blood eosinophils were obtained from seven normal controls and 12 patients (bronchial asthma, n = 9, and hypereosinophilic syndrome (HES), n = 3), and the purity of eosinophils was 97.11 +/- 2.31%, n = 19. We first showed that anti-IFN-gammaR alpha-chain MoAb reacted with all tested eosinophils of both normal controls and patients by flow cytometry analysis. We also showed expression of mRNA for the alpha-chain of IFN-gammaR in all purified eosinophils of six individuals. Further, to characterize IFN-gammaR on eosinophils, we did binding experiments with 125I-IFN-gamma on purified peripheral eosinophils. The linear Scatchard plot indicated a single type of high-affinity binding sites (dissociation constant (Kd) = 3.89-4.95 x 10(-10) M, numbers of binding sites = 183-233/cell, n = 3). To determine whether IFN-gammaR on eosinophils is functional, we examined surface eosinophilic cationic protein (ECP) and CD69 induction after IFN-gammaR ligation with recombinant human IFN-gamma (rhIFN-gamma) on eosinophils by flow cytometry. rhIFN-gamma stimulation significantly induced both ECP and CD69 expression on the 2-18 h-cultured eosinophils in a dose-dependent manner. Further, the effects of rhIFN-gamma stimulation were significantly blocked by both a neutralizing anti-IFN-gamma MoAb and a blocking anti-IFN-gammaR MoAb. These results suggest that human peripheral eosinophils express functional IFN-gammaR.     

Pentacene-based organic thin-film transistors

Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm²/V-s and on/off current ratio larger than 10⁸; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible     

Features of ultrasonic wave propagation to identify defects in composite materials modelled by finite element method

A two-dimensional plane strain finite element model with absorbing boundary condition has been developed to investigate the ultrasonic wave propagation in isotropic and orthotropic media. It is capable of simulating the experimental pulse echo technique to obtain A-scan data, when a short duration pulse is transmitted into a domain with or without a flaw. The flaw can either be a crack or an inclusion of different material such as a Teflon insert or a resin rich zone. After performing FFT on the A-scan data, frequency domain feature analysis is done. The study provides a guideline regarding the suitability of certain harmonics sensitive to certain types of flaw. The simulation shows other important artifacts of wave propagation such as mode conversion and scattering due to the presence of flaws.