Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Tunnel electroresistance in ferroelectric tunnel junctions (FTJs) has attracted considerable interest, because of a promising application to nonvolatile memories. Development of ferroelectric thin‐film devices requires atomic‐scale band‐structure engineering based on depolarization‐field effects at interfaces. By using FTJs consisting of ultrathin layers of the prototypical ferroelectric BaTiO₃, it is demonstrated that the surface termination of the ferroelectric in contact with a simple‐metal electrode critically affects properties of electroresistance. BaTiO₃ barrier‐layers with TiO₂ or BaO terminations show opposing relationships between the polarization direction and the resistance state. The resistance‐switching ratio in the junctions can be remarkably enhanced up to 10⁵% at room temperature, by artificially controlling the fraction of BaO termination. These results are explained in terms of the termination dependence of the depolarization field that is generated by a dead layer and imperfect charge screening. The findings on the mechanism of tunnel electroresistance should lead to performance improvements in the devices based on nanoscale ferroelectrics.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system

We report on the fabrication of organic photodetectors (OPD) based on isolated islands of P3HT:PCBM. Pattern transfer to the active material was done with photolithography based on non-fluorinated solvents and the excessive organic semiconductor was removed with oxygen plasma reactive ion etching. The photoresist system used was found to be benign to the P3HT:PCBM layer as confirmed by absorption, thickness and roughness measurements. Current–voltage characteristics and external quantum efficiency (EQE) remained unchanged after the patterning process. It was demonstrated that it is possible to photolithographically pattern isolated islands with 200 μm edge length with the same dark current density (<10⁻⁵ A/cm² at −2 V bias voltage) and photocurrent density (>5 × 10⁻³ A/cm² at −2 V). Furthermore, concerning the solar cell performance, the patterned, small-area devices showed power conversion efficiency of 2.1% and fill-factor of 60%. Dark current was observed to depend on the size of the remaining semiconductor island, which was demonstrated on OPDs with diameter of 50 μm. The presented results show the feasibility of fabrication of isolated devices based on organic semiconductors patterned with non-fluorinated photolithography.     

Complex Hydrides for Electrochemical Energy Storage

Complex hydrides have energy storage‐related functions such as i) solid‐state hydrogen storage, ii) electrochemical Li storage, and iii) fast Li‐ and Na‐ionic conductions. Here, recent progress on the development of fast Li‐ionic conductors based on the complex hydrides is reported. The validity of using them as electrolytes in all‐solid‐state lithium rechargeable batteries is also examined. Not only coated oxides but also bare sulfides are found to be applicable as positive electrode active materials. Results related to fast Na‐ionic conductivity in the complex hydrides are presented. In the last section, the future prospects for battery assemblies with high‐energy densities, and Mg ion batteries with the liquid and the solid‐state electrolytes are discussed.     

Novel Near‐Infrared Squaraine Sensitizers for Stable and Efficient Dye‐Sensitized Solar Cells

A new molecular design strategy for tuning the energy levels of cis‐configured squaraine sensitizers for dye‐sensitized solar cells is described. The Hammett substituent constant and the π‐conjugation length are used as quantitative indicators to modify the central squarate moiety of the sensitizer dyes; specifically, novel near‐infrared squaraine dyes HSQ3 and HSQ4 are synthesized by incorporation of an electron‐withdrawing and π‐extending ethyl cyanoacetate unit on the central squarate moiety. The solution absorption maximum of HSQ4 occurs at 703 nm, and the energy levels of the lowest unoccupied molecular orbital and the highest occupied molecular orbital are in the ideal range for energetically efficient electron injection and regeneration of the oxidized dye. A solar cell sensitized with HSQ4 exhibits a broad incident photo­n‐to‐current conversion efficiency spectrum, extending into the near‐infrared region with a maximum value of 80% at 720 nm, which is is the highest value reported for a squaraine dye–based dye‐sensitized solar cell. The HSQ4‐sensitized solar cell also exhibits excellent durability during light soaking, owing to the double anchors attaching the dye to the TiO₂ surface and to the long alkyl chains extending outward from the surface.     

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

We investigated the effect of Fe contamination on the electronic properties of dislocation clusters in relation to oxygen precipitation in multicrystalline silicon (mc-Si). Photoluminescence (PL) spectroscopy and mapping were performed at room and liquid-He temperatures on mc-Si wafers before and after Fe contamination. PL spectra consisted of the band-edge emission, the 0.78-eV emission associated with oxygen precipitates, and the dislocation-related D-lines. The Fe contamination increased the electrically active dislocation clusters. Part of these clusters acted as preferential oxygen precipitation sites, and their electronic properties were not further influenced by the Fe contamination.     

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.     

Synthesis and characterization of poly(N-tert-alkylmaleimide)s

N-tert-Butylmaleimide (tBMI) polymerized readily in the presence of a radical initiator in spite of its bulky N-substituent to give a high molecular weight and less-flexible poly(substituted methylene). From kinetic investigation for the polymerization of tBMI with 2,2-azobisisobutyronitrile (AIBN) in benzene, it was revealed that the rate of polymerization (R _p) was expressed as R _p=k [AIBN]^0.51[tBMI]^1.4, and the overall activation energy was 99.6 kJ/mol. The high polymerization of tBMI was assumed to result from the decrease in the rate of bimolecular termination between rigid polymer radicals bearing a bulky substituent. The flexibility of the polymer chain was examined by the viscometric and light scattering methods, and the effect on the polymerization reactivity was discussed.     

A PRACTICAL METHOD FOR RECTIFYING INTERFACIAL TENSION DATA TO PREDICT THE SHAPE OF INTERFACES IN AN IMMISCIBLE LIQUID/LIQUID/GAS SYSTEM

The shape of interfaces formed by the contact of two liquid phases, immiscible with each other, and a gaseous phase can be predicted on the condition that the tension to work at each interface is known with a sufficient accuracy. In general, interfacial tension data available are not so accurate, however, as to be useful as they are in predicting the shape of interfaces, particularly when the spreading coefficient of either liquid (liquid 1) on the other (liquid 2) has a negative value of a small magnitude. Presented in this note is a simple method to rectify the interfacial tension data, with the aid of a measurement of the radius of a lens of liquid 1 of a known volume placed on the horizontal surface of liquid 2, and thereby make them usable for predicting interfacial geometries. The method is tested by applying it to benzene/water and n-pentane/water systems.     

Composition of Corn Hull Dietary Fiber

The corn hull dietary fiber was decomposed into their components such as cellulose, hemicellulose-A, -B, -C, -other and lignin by the Siegel method, and their contents were 16%, 1%, 57%, 14% and 2%, respectivity. The components of ordinary corn fiber were insoluble in water, but several decomposed fractions were able to dissolved. The solubility in water of hemicellulose-B was well and of hemicellulose A was slightly, but other fractions were insoluble. Hemicellulose-A, -B, -C and -other fractions were made up of about 30% of arabinose and 50% of xylose. Uronic acid contents and solubility in water of each hemicellulose fraction were mutually related.