Real-time processing algorithms for target detection andclassification in hyperspectral imagery

The authors present a linearly constrained minimum variance (TCMV) beamforming approach to real time processing algorithms for target detection and classification in hyperspectral imagery. The only required knowledge for these LCMV-based algorithms is targets of interest. The idea is to design a finite impulse response (FIR) filter to pass through these targets using a set of linear constraints while also minimizing the variance resulting from unknown signal sources. Two particular LCMV-based target detectors, the constrained energy minimization (CEM) and the target-constrained interference-minimization filter (TCIMF), are presented. In order to expand the ability of the LCMV-based target detectors to classification, the LCMV approach is further generalized so that the targets can be detected and classified simultaneously. By taking advantage of the LCMV-based filter structure, the LCMV-based target detectors and classifiers can be implemented by a QR-decomposition and be processed line-by-line in real time. The experiments using HYDICE and AVIRIS data are conducted to demonstrate their real time implementation     

用AFM导电探针在n-Si(111)表面进行纳米加工的机理研究

本文介绍了在AFM针尖与氢钝化硅表面之间施加电场作用对硅表面进行修饰的纳米加工方法，重点讨论了加工机理。实验考虑了样品的表面状态，周围大气状况，所加电压的极性、大小和加压方式等影响纳米加工的因素。对机理的研究表明，针尖和样品之间发生的是场致电子发射而非热电子发射，电流热效应增强粒子的扩散能力，提高了电化学反应速度。最后给出了电场诱导阳极氧化扩散增强的加工机理。     

低信噪比下两种点目标检测算法的研究

红外图像中点目标检测技术是近年来信息处理研究的热点和难点之一。当红外图像传感器和目标之间距离很远时,目标在焦平面上成像面积很小,一般不超过探测器像元的大小,因此目标在图像中表现为点目标,且信噪比极低,目标被噪声（杂波）所淹没,给目标的检测带来了极大的困难。这一领域,前人已经进行了大量的研究工作,并提出了一些检测算法。文中也研究设计了两种红外图像点目标检测算法,并对其进行了计算机仿真实验和分析,结果表明这两种算法具有较好的检测能力。     

A formation of cobalt silicide on silicon field emitter arrays byelectrical stress

A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10^-8 torr     

封闭型(6,0)单壁碳纳米管电子传输特性研究

采用广义梯度近似(Generalized gradient approximation,GGA)密度泛函理论与非平衡态格林函数(Non-equilibrium Green’s function,NEGF)相结合的方法对两端封闭型单壁(6,0)碳纳米管进行电子传输的理论研究。在温度为300K的条件下,对不同长度(6,0)单壁碳纳米管(SWNT)进行电子透射概率计算。结果显示,两端封闭型(6,0)碳纳米管的电子传输属于量子化传输模式,并随着碳纳米管长度的增加,某些电子透射概率峰值所对应的能量值并未有大的变化,且呈现线性分布;两端封闭型单壁(6,0)碳纳米管中电子的传输接近无散射弹道传输模式,该系统概率尖峰能量的平均间距约为n×2.2eV,n为整数且1≤n≤6。     

近距离无线通信防碰撞技术研究

简要介绍了近距离无线通信技术及其协议标准EMCA-340使用的防碰撞算法。参考无线射频识别（RFID）有关防碰撞算法原理,总结了多种可在NFC中使用防碰撞算法的改进方案,并对二进制搜索算法和时隙算法的性能进行了比较,最后在此基础之上对更高速率防碰撞算法进行讨论。     

Uniplanar one-dimensional photonic-bandgap structures andresonators

This paper presents uniplanar one-dimensional (1-D) periodical structures, so-called photonic-bandgap (PBG) structures, and defect high-Q resonators for coplanar waveguide, coplanar strip line, and slot line. Proposed uniplanar PBG structures consist of 1-D periodically etched slots along a transmission line or alternating characteristic impedance series with wide band-stop filter characteristics. A stop bandwidth obtained is 2.8 GHz with a stopband rejection of 36.5 dB. This PBG performance can be easily improved if the number of cells or the filling factor is modified in a parametric analysis. Using uniplanar 1-D PBG structures, we demonstrate new high-Q defect resonators with full-wave simulation and measured results. These structures based on defect cavity or Fabry-Perot resonators consist of a center resonant line with two sides of PBG reflectors. They achieve a loaded Q of 247.3 and unloaded Q of 299.1. The proposed circuits should have many applications in monolithic and hybrid microwave integrated circuits     

Novel design for small-size coplanar waveguide frequency tripler

This letter presents a novel design for a small-size coplanar waveguide frequency tripler. In this study, a new BPF has been replaced the conventional stub lines in the output termination of the multiplier. Not only enhance the performance of the tripler, but also reduce the whole circuit size. to 2.125/spl times/2.275 cm/sup 2/ in the frequency 0.8/2.4 GHz, The spurious suppressions are 37.48, 33.38, and 32.08 dBc for the 1st, 2nd, and 4th harmonics, respectively. It reveals the best output power of -1.92 dBm for a 0 dBm input signal and maximum conversion gain of -1.92 dB. It is very useful for applications in the wireless communication and radar systems.     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

Broadband monolithic passive baluns and monolithic double-balancedmixer

The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled line baluns are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum relative bandwidths in excess of 3:1 are achieved. Simulated performances using full wave electromagnetic analysis are shown to agree with the measured results. Two accurate equivalent circuit models constructed from either electromagnetic simulated or measured S-parameters are developed for the MS Marchand and transformer baluns making the optimization of baluns and circuit design using the baluns much more efficient. The design of monolithic double-balanced diode mixer using two planar-transformer baluns is also presented. Without DC bias, the mixer shows a minimum conversion loss of 6 dB with the RF at 5 GHz and a LO drive of 15 dBm at 4 GHz. The measured input IP₃ of this mixer is better than 15 dBm over the 4 to 5.75 GHz frequency band