High efficiency red phosphorescent organic light-emitting diodes using a spirobenzofluorene type phosphine oxide as a host material

High efficiency red phosphorescent organic light-emitting diodes have been developed using a spirobenzofluorene type phosphine oxide (SPPO2) as a host material. The SPPO2 had a high glass transition temperature of 119 °C and a smooth surface morphology with a surface roughness less than 1 nm. The red device with the SPPO2 as a host showed a quantum efficiency of 14.3% with a current efficiency of 20.4 cd/A.     

A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using aNAND flash memory technology

A 3.3-V 16-Mb nonvolatile memory having operation virtually identical to DRAM with package pin compatibility has been developed. Read and write operations are fully DRAM compatible except for a longer RAS precharge time after write. Fast random access time of 63 ns with the NAND flash memory cell is achieved by using a hierarchical row decoder scheme and a unique folded bit-line architecture which also allows bit-by-bit program verify and inhibit operation. Fast page mode with a column address access time of 21 ns is achieved by sensing and latching 4 k cells simultaneously. To allow byte alterability, nonvolatile restore operation with self-contained erase is developed. Self-contained erase is word-line based, and increased cell disturb due to the word-line based erase is relaxed by adding a boosted bit-line scheme to a conventional self-boosting technique. The device is fabricated in a 0.5-μm triple-well, p-substrate CMOS process using two-metal and three-poly interconnect layers. A resulting die size is 86.6 mm², and the effective cell size including the overhead of string select transistors is 2.0 μm²     

Quantitative Evaluation Method for Etch Sidewall Profile of Through‐Silicon Vias (TSVs)

Through‐silicon via (TSV) technology provides much of the benefits seen in advanced packaging, such as threedimensional integrated circuits and 3D packaging, with shorter interconnection paths for homo‐ and heterogeneous device integration. In TSV, a destructive cross‐sectional analysis of an image from a scanning electron microscope is the most frequently used method for quality control purposes. We propose a quantitative evaluation method for TSV etch profiles whereby we consider sidewall angle, curvature profile, undercut, and scallop. A weighted sum of the four evaluated parameters, nominally total score (TS), is suggested for the numerical evaluation of an individual TSV profile. Uniformity, defined by the ratio of the standard deviation and average of the parameters that comprise TS, is suggested for the evaluation of wafer‐to‐wafer variation in volume manufacturing.     

Performance evaluation and application of channel offset schemes inindoor channel assignments

We deal with channel offset schemes and their application in three-dimensional (3-D) frequency reuse environments with ideal cubic microcells. Formulas are derived to calculate channel reuse distances (CRDs) and interchannel usage distances (IUDs) for a given offset degree. For an indoor personal communication network (PCN), an algorithm is proposed for fixed channel assignment with channel offset. The spectral efficiency of channel offset schemes is discussed and the results show that compared to the channel offsetless scheme, channel offset schemes make more efficient use of limited spectrum resources     

Power generation characteristics of a sandwich‐type self‐heating thermoelectric generator with spatially varying embedded heat source

Power generation characteristics of a sandwich‐type thermoelectric generator in which the heat source is embedded into thermoelectric elements are investigated. Our previous work on a similar concept only considered a uniform heat source distribution inside thermoelectric elements. In this work, the effect of the spatial distribution of a heat source is examined. In particular, the effect of the concentration of heat source near the one end, that is, the hot end, is intensively studied as a potential means of improving the efficiency of the device. Although the effects of heat source concentration in impractical cases without heat transfer limitations on the cold side remain ambiguous, it become clear that heat source concentration indeed has positive effects in more realistic cases with finite heat transfer coefficients imposed on the cold side. Because of the relatively low efficiency of typical thermoelectric generation, a significant amount of heat must be dissipated from the cold end of the thermoelectric element. Greater heat source concentration near the hot end leads to more effective utilization of available heat source, reduces the amount of heat rejected at the cold end, and lowers the hot end temperature of the thermoelectric element. Overall, it is suggested that heat source concentration can be used as a method to achieve more efficient operation and better structural integrity of the system. Copyright © 2015 John Wiley & Sons, Ltd.     

Modeling and simulation of 2D lithium‐ion solid state battery

The goal of the work presented here was to develop a simulation approach for studying the effects of materials and geometry on the performance of Li‐ion Solid State Batteries (SSB). Simulation provides the opportunity to explore, with ease, different material properties and cell geometries to optimize a Li‐ion SSB's performance. Simulations shown in this paper are time‐dependent and consider electrochemical reaction, heat transfer, the diffusion of Li‐ions and electrons in the electrolyte, and solid Li diffusion in the positive electrode. A 2D model was simulated and the results shown. The simulations were able to show discharge curves, heat flux, the concentration of Li‐ions, electrons, and solid Li at any time in the discharge cycle. Copyright © 2015 John Wiley & Sons, Ltd.     

Ultra fast symmetry and SIMD-based projection-backprojection (SSP) algorithm for 3-D PET image reconstruction

Remarkable progress in positron emission tomography (PET) development has occurred in recent years, in hardware, software, and computer implementation of image reconstruction. Recent development in PET scanners such as the high-resolution research tomograph (HRRT) developed by CTI (now Siemens) represents such a case and is capable of greatly enhanced resolution as well as sensitivity. In these PET scanners, the amount of coincidence line data collected contains more than 4.5 x 10(9) coincidence lines of response generated by as many nuclear detectors as 120 000. This formidable amount of data and the reconstruction of this data set pose a real problem in HRRT and have also been of the major bottle neck in further developments of high resolution PET scanners as well as their applications. In these classes of PET scanners, therefore, obtaining one set of reconstructed images often requires many hours of image reconstruction. For example, in HRRT with full data collection in a normal brain scan (using SPAN 3), the image reconstruction time is close to 80 min, making it practically impossible to attempt any list-mode-based dynamic imaging since the image reconstruction time would take many days (as much as 43 h or more for 32-frame dynamic image reconstruction). To remedy this data-handling problem in image reconstruction, we developed a new algorithm based on the symmetry properties of the projection and backprojection processes, especially in the 3-D OSEM algorithm where multiples of projection and back-projection are required. In addition, the single-instruction multiple-data (SIMD) technique also allowed us to successfully incorporate the symmetry properties mentioned above, thereby effectively reducing the total image reconstruction time to a few minutes. We refer to this technique as the symmetry and SIMD-based projection-backprojection (SSP) technique or algorithm and the details of the technique will be discussed and an example of the application of the technique to the HRRT's OSEM algorithm will be presented as a demonstration.     

Laser Raman studies of α–bromoacrylamide reactive dyes and wool

The use of laser Raman spectroscopy in the investigation of interactions in α–bromoacrylamide reactive dye–wool fibre systems has been established. The spectra obtained (in particular using C. I. Reactive Red 84) provide some evidence to support the proposal that the dye reacts via addition at the double bond of the reactive group, followed by ring closure through nucleophilic substitution. Furthermore, preliminary studies of the effect of the commercial levelling assistant Albegal B on the aqueous dye environment have been made using C. I. Reactive Yellow 39. The results show that, whilst the primary interaction between the dye and auxiliary may be via the water–solubilising sulphonate groups of the dye, hydrophobic interactions are also important.     

Formation of Pb/63Sn solder bumps using a solder droplet jetting method

Formation processes of Pb/63Sn solder droplets using a solder droplet jetting have not been sufficiently reported. Solving problems such as satellite droplets and position errors are very important for a uniform bump size and reliable flip-chip solder bump formation process. First, this paper presents the optimization of jet conditions of Pb/63Sn solder droplets and the formation process of Pb/63Sn solder bumps using a solder droplet jetting method. Second, interfacial reactions and mechanical strength of jetted Pb/63Sn solder bumps and electroless Ni-P/Au UBM joints have been investigated. Interfacial reactions have been investigated after the second solder reflow and aging, and results were compared with those of solder bumps formed by a solder screen-printing method. Third, jetted solder bumps with variable bump sizes have been demonstrated by a multiple jetting method and the control of waveform induced to a jet nozzle. Multiple droplets jetting method can control various height and size of solder bumps. Finally, real applications of jetted Pb/63Sn solder bumps have been successfully demonstrated on conventional DRAM chips and integrated passive devices (IPDs).     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).