Relationship between changes in physical activity and plasma insulin during a 2.5-year follow-up study

The association between changes in physical activity, body weight, and diet and fasting plasma insulin was analyzed in a 2.5-year follow-up study of 146 men aged 50 to 60 years. Physical activity was assessed by a 7-day physical activity recall interview, diet by a 4-day food record, and plasma insulin radioimmunologically. Total physical activity decreased from (mean +/- SD) 45.1 +/- 10.1 to 39.0 +/- 6.1 metabolic equivalent (MET) hours (METh).d-1 and conditioning physical activity (> 5.0 METs) from 8.0 +/- 11.2 to 2.7 +/- 5.0 METh.d-1, whereas plasma insulin increased from 8.2 +/- 5.8 to 9.2 +/- 6.7 mU.L-1 and body weight from 80.5 +/- 12.0 to 81.6 +/- 11.6 kg during the follow-up period (P < or = .001 for all). The change in conditioning physical activity correlated inversely (r = -.34, P < .001) and change in body weight positively (r = .42,P < .001) with the change in plasma insulin level. With data adjusted for the baseline insulin level, cardiovascular health status, alcohol intake, change in body weight, smoking, age, and follow-up time, the odds ratio for an increase in fasting plasma insulin was 8.9 (95% CI, 2.1 to 37.1; P = .003) for men with the greatest decrease in conditioning physical activity (< -7 METh) compared with men who reported an increase in conditioning physical activity. The same logistic regression model showed an odds ratio of 9.9 (95% CI, 2.1 to 45.4; P = .003) for the increase in plasma insulin for subjects who gained more than 3.3 kg body weight compared with subjects who lost at least 0.6 kg. Men who consumed at least 12 g.d-1 alcohol at both examinations had an odds ratio of 12.8 (95% CI, 1.7 to 94.5; P = .012) compared with nondrinkers. These data suggest that in middle-aged men, a reduction in physical activity increases the risk for increased plasma insulin independently of alcohol intake and changes in body weight.     

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Diamond surfaces polished both mechanically and manually; an atomic force microscopy (AFM) study

Diamond surfaces that are polished both mechanically and manually have been studied using atomic force microscopy and compared with optical micrographs obtained within the Nomarski interference mode. The extra gentle manual polishing which follows the mechanical polishing was developed to produce much smoother, well characterized and flat diamond surfaces than those prepared through mechanical polishing only. Both the AFM and optical micrographs showed the manually polished diamond surfaces being smoother and also exhibiting lower roughness parameters than those polished mechanically only. Annealing the surfaces to 250 °C did not show any noticeable changes in the surface roughnesses, but a 750 °C vacuum-anneal did show some differences that were attributed to possible surface etching through the desorption of the surface-bonded species.     

Characteristics of a photonic bandgap single defect microcavityelectroluminescent device

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70-Å compressively strained In_0.15Ga_0.85As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β≈0.06     

Real-time reconfigurable subthreshold CMOS perceptron.

In this paper, a new, real-time reconfigurable perceptron circuit element is presented. A six-transistor version used as a threshold gate, having a fan-in of three, producing adequate outputs for threshold of T =1, 2 and 3 is demonstrated by chip measurements. Subthreshold operation for supply voltages in the range of 100-350 mV is shown. The circuit performs competitively with a standard static complimentary metal-oxide-semiconductor (CMOS) implementation when maximum speed and energy delay product are taken into account, when used in a ring oscillator. Functionality per transistor is, to our knowledge, the highest reported for a variety of comparable circuits not based on floating gate techniques. Statistical simulations predict probabilities for making working circuits under mismatch and process variations. The simulations, in 120-nm CMOS, also support discussions regarding lower limits to supply voltage and redundancy. A brief discussion on how the circuit may be exploited as a basic building block for future defect tolerant mixed signal circuits, as well as neural networks, exploiting redundancy, is included.     

Kinetics of manganese ore reduction by carbon monoxide

A step has been made in the direction of understanding the fundamental chemical processes taking place inside electric are furnaces producing manganese alloys. The reduction of higher manganese oxides to MnO by carbon monoxide has been studied in the temperature range 700 °C to 1100 °C. A topochemical pattern with a single shrinking core inside the ore particles has been observed in most cases. It has been found that the reduction of some manganese silicates (braunite minerals) is influenced by reaction interface kinetics, whereas the reduction rate of manganese oxides (bixbyite and hausmannite) is mostly determined by product shell pore diffusion. Sintering kinetics and the extent of natural porosity determine the product shell pore diffusivity. As the melting point of the reaction product is approached, rapid sintering leads to a decrease in diffusivity.     

Cryogenic Ge Detectors for Dark Matter Search: Surface Event Rejection with Ionization Signals

A new design of an ionization-heat germanium detector for dark matter search is presented, based on the use of interleaved electrodes for charge collection. This device allows active rejection of surface events by performing the appropriate cuts in the charge measurement data. Test experiments were performed with a prototype device, fitted with annular collection electrodes and with a neutron transmutation-doped Ge thermometer. Calibration runs with gamma and neutron sources demonstrate the remarkable possibilities offered by this type of detector in terms of surface event discrimination.      

Nonlinearized approach to profile inversion

A method for reconstructing the index of refraction of a bounded inhomogeneous object of known geometric configuration from measured far-field scattering data is presented. This work is an extension of recent results on the direct scattering problem wherein the governing domain integral equation was solved iteratively by a successive relaxation technique. The relaxation parameters were chosen to minimize the residual error at each step. Convergence of this process was established for indices of refraction much larger than required for convergence of the Born approximation. For the inverse problem, the same technique is applied, except is this case both the index of refraction and the field are unknown. Iterative solutions for both unknowns are postulated with two relaxation parameters at each step. They are determined by simultaneously minimizing the residual errors in satisfying the domain integral equation and matching the measured data. This procedure retains the nonlinear relation between the two unknowns. Numerical results are presented for the dielectric slab. The algorithm is shown to be effective in cases where the iterative solution of the direct problem is rapidly convergent and outperforms the Born-based approaches.