Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gain, with a maximum value of M = 5000 for the diffusion current at a reverse bias of V _b = 12 V. When the light was injected in the depletion layer, the gain was reduced as the injection approached the N+ edge of the junction. The impulse response was limited by the diode series resistance–capacitance product, RC, due to the large capacitance of the diode metallization. Hence, the fall time is given by the RC constant, estimated as RC = 270 ps, and the rise time is due to the charging of the diode capacitance via the transit and multiplication of carriers in the depletion layer. The latter varies between t _10–90 = 20 ps (at intermediate gains M < 500) and t _10–90 = 70 ps (at M = 3500). The corresponding RC-limited bandwidth is BW = 600 MHz, which yields a new absolute record in gain–bandwidth product of GBW = 2.1 THz. The increase in rise time at high gains indicates the existence of a limit in the transit-time-limited gain–bandwidth product, GBW = 19 THz. The impulse response was modeled using a one-dimensional deterministic model, which allowed a quantitative analysis of the data in terms of the average velocity of electrons and holes. The fitting of the data yielded a saturation of the electron and hole velocity of v _e = 2.3 × 10⁷ cm/s and v _h = 1.0 × 10⁷ cm/s at electric fields E > 1.5 kV/cm. The increase in rise time at high bias is consistent with the results of Monte Carlo simulations and can be partly explained by a reduction of the electron saturation velocity due to frequent impact ionization. Finally, the model was used to predict the bandwidth in diodes with shorter RC = 5 ps, giving BW = 16 GHz and BW = 21 GHz for x _j = 4 μm and x _j = 2 μm, respectively, for a gain of M = 100.     

Thermal Conductivity of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Affected by Grain Size and Pores

A fine measurement system for measuring thermal conductivity was constructed. An accuracy of 1% was determined for the reference quartz with a value of 1.411 W/m K. Bi_0.5Sb_1.5Te₃ samples were prepared by mechanical alloying followed by hot-pressing. Grain sizes were varied in the range from 1 μm to 10 μm by controlling the sintering temperature in the temperature range from 623 K to 773 K. The thermal conductivity was 0.89 W/m K for the sample sintered at 623 K, while a grain size of 1.75 μm was measured by optical microscopy and scanning electron microscopy. The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 K to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration.     

The theory of multiple peeling

In this paper we derive the theory of multiple peeling, extending the pioneering energy-based single peeling theory of Kendall, including large deformations and pre-stretching. We can thus treat a complex system of films, adhering over a substrate and having a common hinge where the pulling force is applied. Two case studies are investigated: the asymmetric V-shape double peeling and the symmetric cone-shape configuration with N peeling tapes, both requiring the solution of six nonlinear coupled equations (instead of the one needed in the simpler single peeling problem). Remarkable implications emerge: (1) for moderate deformations, the critical strain of a tape is identical to that of the single peeling; (2) an optimal peeling angle, at which adhesion is maximal, is discovered; (3) an additional optimization, even for hierarchical structures, is introduced by imposing the delamination force equal to the intrinsic fracture of the tape. Also, the length of the peeling process zone is calculated, suggesting different optimal values for flaw-tolerant peeling at different angles. Applications to gecko adhesion, for which the flaw-tolerant peeling is demonstrated, and spider silk anchors, that we are going to discuss in details in subsequent papers, are envisioned (including a new pre-stretching mechanism for adhesion control) and suggested by the evidence of a smart mechanism capable of maximizing adhesion simply by increasing the applied tension.     

Fabrication of transparent polymer-matrix nanocomposites with enhanced mechanical properties from chemically modified ZrO<Subscript>2</Subscript> nanoparticles

Optically transparent nanocomposites with enhanced mechanical properties were fabricated using stable dispersions of sub 10 nm ZrO₂ nanoparticles. The ZrO₂ dispersions were mixed with a commercially available bisphenol-A-based epoxy resin (RIMR 135i) and cured with a mixture of two amine-based curing agents (RIMH 134 and RIMH 137) after complete solvent removal. The colloidal dispersions of ZrO₂ nanoparticles, synthesized through a non-aqueous approach, were obtained through a chemical modification of the ZrO₂ nanoparticle surface, employing different organic ligands through simple mixing at room temperature. Successful binding of the ligands to the surface was studied utilizing ATR–FT-IR and thermogravimetric analysis. The homogeneous distribution of the nanoparticles within the matrix was proven by SAXS and the observed high optical transmittance for ZrO₂ contents of up to 8 wt%. Nanocomposites with a ZrO₂ content of only 2 wt% showed a significant enhancement of the mechanical properties, e.g., an increase of the tensile strength and Young’s modulus by up to 11.9 and 12.5%, respectively. Also the effect of different surface bound ligands on the mechanical properties is discussed.     

Effects on Undercooling and Interfacial Reactions with Cu Substrates of Adding Bi and In to Sn-3Ag Solder

This study investigated the effects of adding Bi and In to Sn-3Ag Pb-free solder on undercooling, interfacial reactions with Cu substrates, and the growth kinetics of intermetallic compounds (IMCs). The amount of Sn dominates the undercooling, regardless of the amount or species of further additives. The interfacial IMC that formed in Sn-Ag-Bi-In and Sn-In-Bi solders is Cu₆Sn₅, while that in Sn-Ag-In solders is Cu₆(Sn,In)₅, since Bi enhances the solubility of In in Sn matrices. The activation energy for the growth of IMCs in Sn-Ag-Bi-In is nearly double that in Sn-Ag-In solders, because Bi in the solder promotes Cu dissolution. The bright particles that form inside the Sn-Ag-In bulk solders are the ζ-phase.     

Symbol Error Rate Analysis and Power Allocation for Adaptive Relay Selection Schemes

In this paper, we analyse the symbol error rate (SER) performance of adaptive relay selection schemes (ARS) in a general dual-hop multiple-relay network. Specifically, we provide a closed-form SER expression for ARS which is tight over the whole signal-to-noise ratio (SNR) region. In addition, the derived SER can be readily extended to conventional relay selection schemes, i.e. amplify-and-forward relay selection (AF-RS), perfect decode-and-forward relay selection (PDF-RS), adaptive decode-and-forward relay selection (ADF-RS), and cooperative-maximum-ratio-combining decode-and-forward relay selection (CDF-RS). Transmit power allocation based on the simplified SER is presented to improve the system performance. The analytical results are verified by computer simulations.     

Spare node cooperative method for IEEE 802.11 networks

Most of the existing cooperation methods select relay node(s) mainly based on the channel state information, but do not consider whether the selected relay nodes work or not. If the selected relays are invalidated, the performance of cooperative communication will deteriorate. To resolve the above problem, this paper investigates cooperative communication in IEEE 802.11 networks, and proposes a novel Spare Cooperative Method (SCM). SCM chooses a spare cooperation node to enhance the reliability of communication, and uses an enhanced handshaking mechanism to coordinate the access of source nodes and cooperation nodes to the wireless channel. The performance of SCM is comprehensively analyzed in terms of outage probability and saturated throughput. The analysis shows that SCM improves the performance of IEEE 802.11.     

A Design-Based Structural Test Method for a Switched-Resistor DAC

In this paper, a design-based structural testing method is presented to enable a fast, low cost test for a switched-resistor digital-to-analogue converter (DAC). A 24-bit stereo DAC is used to demonstrate this. After schematic-level simulations and experimental verification, it is found that the dynamic parameter THD can be predicted by the static test. Practical production wafer test and final test results evaluate this structural test method by comparing it with the traditional THD test method. In this paper the simulation results, the relevant measurement results, and the testing results are discussed. Finally, the application recommendations are given.

A Review on Thin-film Sensing with Terahertz Waves

In the past two decades, the development and steady improvement of terahertz technology has motivated a wide range of scientific studies designed to discover and develop terahertz applications. Terahertz sensing is one such application, and its continued maturation is virtually guaranteed by the unique properties that materials exhibit in the terahertz frequency range. Thin-film sensing is one branch of this effort that has enjoyed diverse development in the last decade. Deeply subwavelength sample thicknesses impose great difficulties to conventional terahertz spectroscopy, yet sensing those samples is essential for a large number of applications. In this article we review terahertz thin-film sensing, summarizing the motivation, challenges, and state-of-the-art approaches based predominately on terahertz time-domain spectroscopy.     

Design,Construction, and Installation of Movable Electrode Biasing System on Tokamak

The first results of the movable electrode biasing experiments performed on the IR-T1 tokamak are presented. For this purpose, a movable electrode biasing system was designed, constructed, and installed on the IR-T1 tokamak, and then the positive voltage applied to an electrode inserted inside the tokamak limiter and the plasma current, poloidal and radial components of the magnetic fields, loop voltage, and diamagnetic flux in the absence and presence of the biased electrode were measured. Results compared and discussed.