Magnetron-assisted deposition of thin (SiC)1-x(AlN)x alloy films

The results of theoretical estimations of important parameters of the process of magnetron-assisted sputtering are reported. The parameters are the extent of the zone of thermalization of atoms and the distance from the target to the conditional anode. The method of magnetron-assisted sputtering of polycrys-talline SiC-AlN targets is applied to produce thin (SiC)_1-x(AlN)_x alloy films on SiC and Al₂O₃ substrates. The structure and composition of the films are studied by X-ray diffraction measurements and electron microscopy. The factors that control the composition and structure of the films and the conditions of formation of the single-crystal (SiC)_1-x(AlN)_x films on the SiC substrates are established.     

Computation of the Solubility of Aromatic Hydrocarbons in Supercritical Media Based on the Entropic Method of Similarity Theory

Theoretical Foundations of Chemical Engineering - The results of generalizing the solubility of aromatic hydrocarbons in supercritical carbon dioxide using the entropy method of similarity theory...     

Electric properties of (SiC)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(AlN)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiC anisotropic heterostructures

The heterostructures of p-(SiC)_{1 − x} (AlN) _x / _n -6H-SiC are synthesized by means of sublimation epitaxy of (SiC)_{1 − x} (AlN) semiconductor solid solutions at 6H-SiC substrates. The results of the investigation of the concentration and temperature dependences on current-voltage characteristics (CVCs) are presented. It is revealed that due to the high potential barriers the forward current is caused by the tunneling and recombination processes of charge carriers via states at the boundary surface.     

Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)_1–x(AlN)_x structures. The results of calculations are compared to experimental data.     

Effect of sublimation epitaxy conditions on the properties of (SiC)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(AlN)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

We have studied the effect of growth conditions on the growth rate, chemical composition, and conductivity type of films of (SiC)_{1 ? x} (AlN) _x semiconductor solid solutions produced by sublimation epitaxy on 6H-SiC substrates in an argon + nitrogen atmosphere.     

Cyclic-deformation system for the reduction of continuous-cast slabs

Introducing systems capable of profound reduction in a casting and rolling module improves the product quality, on account of the intense working of large continuous-cast slabs over the whole cross section and the production of uniform fine-grain structure of the metal, and also increases the cross section of continuous- cast billet. Analysis of the formation of nonmetallic inclusions and segregation in the axial zone of the thick rolled sheet is followed by analysis of the nonuniform deformation over the slag height in the reduction of large continuous-cast slabs at the 5000 mill at OAO Magnitogorskii Metallurgicheskii Kombinat. The structure of a cyclic-deformation system for preliminary deformation of large continuous-cast slabs is described, and its capabilities are explored. Hammers for preliminary deformation of large continuous-cast slabs are considered. Experimental data are presented for the deformation of continuous-cast steel 45 and 12Kh18N10T steel billet. The structure of the continuous-cast billet is assessed in the course of reduction on the cyclic-deformation system. The basic parameters of the system for preliminary deformation of large continuous- cast slabs are determined. The capabilities of the cyclic-deformation system are outlined in terms of increase in sheet quality. On that basis, the use of the cyclic-deformation system in the continuous-casting line for preliminary reduction of large continuous-cast slabs is recommended: it permits matching of the speed of continuous-casting and cyclic-deformation processes; and ensures 45–90% reduction in a single pass so as to obtain well-worked cast structure over the whole slab cross section. When using the cyclic-deformation system in the continuous-casting line, the continuous-cast slabs are reduced by means of the heat of the cast metal, thereby greatly reducing the energy consumption in billet production. The cyclic-deformation system may be used with thick-sheet and broad-strip mills for preliminary single-pass reduction of the hot slab, with improvement in sheet quality and reduction in the number of passes in the mills.     

Structural Aspects of Zones of Plastic Strain. Part I. Effect of Adiabatic Shear

Metal Science and Heat Treatment - The structure, the dynamic crack resistance, and the characteristics of mechanical properties of quenched and tempered structural steel 09G2S are studied. Special...     

The Influence of Dynamic Preload on the Fatigue Endurance Limit of AMg6 Alloy

Technical Physics Letters - The influence of dynamic preload on the fatigue endurance limit of AMg6 alloy has been experimentally studied in a range of 109 loading cycles. It is established that...     

Structure and Spectral Dependences of the Raman Scattering of Photosensitive CuIn<Subscript>0.95</Subscript>Ga<Subscript>0.05</Subscript>Se<Subscript>2</Subscript> Films on Glass,Aluminum, and Nanoporous Al/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Substrates

Photosensitive polycrystalline CuIn_0.95Ga_0.05Se₂ thin films have been formed on glass, aluminum, and nanoporous Al/Al₂O₃ substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural properties and the Raman scattering spectral dependences have been investigated. The dependence of the main lattice parameters and intensities of the Raman scattering lines on the substrate material is demonstrated.