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51.
52.
We present a structured procedure for order pick system (OPS) analysis and design that has been established on literature review and interviews with and presentations to OPS experts. In particular, we attempt to include the thinking processes that occur between OPS designers and owners. The design procedure and related issues are discussed in the order of input, selection, and evaluation stages. 相似文献
53.
Chih-Chun Hsieh Tao-Chih Chang Dong-Yih Lin Ming-Che Chen Weite Wu 《Metals and Materials International》2007,13(5):411-416
The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel
welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition
of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD),
scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS),
respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless
steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding.
The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ2 in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in
the fusion zone of the third pass welds during multi-pass welding. 相似文献
54.
Kow Ming Chang Yuan Hung Chung Gin Ming Lin 《Electron Device Letters, IEEE》2002,23(5):255-257
Studies the anomalous variations of the OFF-state leakage current (IOFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous IOFF can be attributed to (1) IOFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) IOFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/LCH) 相似文献
55.
56.
Yung-Chung Chang Wei-Tzen Yang Chun-Chang Liu 《Power Systems, IEEE Transactions on》1994,9(3):1665-1671
A method is proposed which avoids many limitations associated with traditional B-coefficient loss coefficient calculation. The proposed method, unlike the traditional B-coefficient method, is very fast and can handle line outages. The method utilizes network sensitivity factors which are established from DC load flow solutions, Line outage distribution factors (ODFs) are formulated using changes in network power generations to simulate the outaged line from the network. The method avoids the use of complicated reference frame transformations based upon Kron's tenser analysis. The necessity of data normalization used in least squares and the evaluation of the slope of &thetas;j versus PGn is not necessary with the proposed method. Using IEEE standard 14-bus and 30-bus systems, the method's results are compared against results obtained from an AC load flow program (LFED). The method's solution speed is compared to that of the LFED method, the base case database method and the conventional B-coefficient method based on Ajn-factor. The proposed method is easy to implement and, when compared to other methods, has exhibited good accuracy and rapid execution times. The method is well suited to online dispatch applications 相似文献
57.
58.
T. Nozokido J. J. Chang C. M. Mann T. Suzuki K. Mizuno 《Journal of Infrared, Millimeter and Terahertz Waves》1994,15(11):1851-1865
We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs. 相似文献
59.
60.
Comparison of protein adsorption isotherms and uptake rates in preparative cation-exchange materials
Adsorption isotherms and effective diffusivities of lysozyme in a set of six preparative cation-exchange stationary phases were determined from batch uptake data in a stirred vessel. Both a pore diffusion and a homogeneous diffusion model were used in estimating diffusivities, with the isotherms fitted to a non-Langmuirian analytical isotherm equation. The capacities inferred from the isotherms are found to be correlated with the surface area accessible to lysozyme, the effective surface concentrations obtained being in agreement with values measured by different methods in various non-chromatographic systems. The pore diffusivities show systematic trends with protein and salt concentration, and effects of pore size and connectivity are also evident. Some trends in the homogeneous diffusivities are quite different to those in the pore diffusivities, but these differences largely disappear when the homogeneous diffusivities are rescaled to account for adsorption equilibrium behavior. Additional information is required to elucidate further the mechanisms of coupled diffusion and adsorption in stationary phases. 相似文献