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51.
Translated from Izmeritel'naya Tekhnika, No. 5, pp. 22–23, May, 1988. 相似文献
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A. A. Ivanov A. I. Sorokin V. P. Panchenko I. V. Tarasova N. Yu. Tabachkova V. T. Bublik R. H. Akchurin 《Semiconductors》2017,51(7):866-869
Copper-selenide (Cu2Se) samples are produced by mechanochemical synthesis and compaction by spark plasma sintering and hot pressing. The structure and phase composition of the samples before and after heat treatment are studied by the X-ray diffraction technique and electron microscopy. The character of changes in the shape and size of structural elements of the samples is shown. Variations in the phase composition of copper selenide in the temperature range from 25 to 500°C are studied in situ. 相似文献
55.
V. M. Boĭko V. T. Bublik M. I. Voronova N. G. Kolin D. I. Merkurisov K. D. Shcherbachev 《Semiconductors》2006,40(7):749-757
Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) and to full-spectrum reactor neutrons with the ratio between the flux densities of slow and fast neutrons ?sn/?fn ≈ 1 are studied. It is shown that, in regard to the effect of fast neutrons on the lattice spacing, two portions can be distinguished in its dependence on the irradiation dose. At small fluences of fast neutrons (F fn < 2.5 × 1017 cm?2), no increase in the lattice spacing is observed. As follows from the diffuse X-ray scattering data, in this region of fluences, the clusters of vacancies dissociate and the number of small-sized interstitial-type clusters increases. At F fn > 2.5 × 1017 cm?2, the lattice spacing increases linearly with increasing fluences of neutrons, and numerous small-sized vacancy clusters and interstitial clusters capable of trapping the Sn dopant atoms are formed. Heat treatment of the exposed samples at temperatures up to 400°C results in complete restoration of the lattice spacing. 相似文献
56.
Agarkova E. A. Borik M. A. Bublik V. T. Volkova T. V. Kulebyakin A. V. Kuritsyna I. E. Larina N. A. Lomonova E. E. Milovich F. O. Myzina V. A. Ryabochkina P. A. Tabachkova N. Yu. 《Russian Microelectronics》2019,48(8):523-530
Russian Microelectronics - The results of investigating the crystal structure, ionic conductivity, and local structure of the (ZrO2)1 –x(Gd2O3)x and (ZrO2)1 –x(Y2O3)x (x = 0.04, 0.08,... 相似文献
57.
Sh. K. Ismailov V. P. Smirnov O. V. Gatelyuk V. V. Bublik 《Russian Engineering Research》2009,29(2):126-130
The character of thermo-mechanical ageing caused by growing of internal heat resistance of powerful semi-conductor devices in transforming units has been clarified. The reasons of low reliability of electronic equipment of electric locomotive are found out. The way to increase its lifetime is suggested. 相似文献
58.
Specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been
studied. It is shown that there are differences between variations in the structural and electrical properties of the thin
silicon layer and those in bulk silicon crystals (with similar electrical characteristics) subjected to the same radiation
effect. It is established that the embedded insulator in the SOI structure represents a barrier for motion of radiation-induced
intrinsic interstitial silicon atoms, which brings about an increase in the dose of bombarding ions, which leads to the loss
of single-crystallinity of the silicon layer in a SOI structure. It is shown that γ-ray irradiation with doses unaffecting
the electrical conductivity of bulk silicon crystals appreciably affects the conductivity of the silicon layer in the SOI
structures. In addition, variation in the conductivity of silicon layer is related to variation in the density of surface
states at the interface between the silicon layer and the built-in insulator, rather than to generation of conventional radiation-induced
structural defects in silicon. 相似文献
59.
V.B. Ufimtsev V.B. Osvensky V.T. Bublik T.B. Sagalova O.E. Jouravlev 《Advanced Performance Materials》1997,4(2):189-197
Ternary solid solutions BixSb1-xTe and especially Bi2Te1-ySey grown by vertical zone melting have the tendency for dendrite liquation. It causes considerable chemical inhomogeneity of the material and multicomponent structure. The effect of long-term annealing at 380–400°C on microstructure, phase composition and properties of structural components has been studied. It was shown that proper growth regime provides ingots with oriented column structure and good texture, which maximizes thermoelectric properties along the growth axis. 相似文献
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