Improved signal averaging performance in a weighing system

Translated from Izmeritel'naya Tekhnika, No. 5, pp. 22–23, May, 1988.     

Structure of the Cu<Subscript>2</Subscript>Se compound produced by different methods

Copper-selenide (Cu₂Se) samples are produced by mechanochemical synthesis and compaction by spark plasma sintering and hot pressing. The structure and phase composition of the samples before and after heat treatment are studied by the X-ray diffraction technique and electron microscopy. The character of changes in the shape and size of structural elements of the samples is shown. Variations in the phase composition of copper selenide in the temperature range from 25 to 500°C are studied in situ.     

Structural changes induced by neutron irradiation and heat treatments in InSb single crystals

Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) and to full-spectrum reactor neutrons with the ratio between the flux densities of slow and fast neutrons ?_sn/?_fn ≈ 1 are studied. It is shown that, in regard to the effect of fast neutrons on the lattice spacing, two portions can be distinguished in its dependence on the irradiation dose. At small fluences of fast neutrons (F _fn < 2.5 × 10¹⁷ cm^?2), no increase in the lattice spacing is observed. As follows from the diffuse X-ray scattering data, in this region of fluences, the clusters of vacancies dissociate and the number of small-sized interstitial-type clusters increases. At F _fn > 2.5 × 10¹⁷ cm^?2, the lattice spacing increases linearly with increasing fluences of neutrons, and numerous small-sized vacancy clusters and interstitial clusters capable of trapping the Sn dopant atoms are formed. Heat treatment of the exposed samples at temperatures up to 400°C results in complete restoration of the lattice spacing.     

Effect of the Phase Composition and Local Crystal Structure on the Transport Properties of the ZrO2–Y2O3 and ZrO2–Gd2O3 Solid Solutions

Russian Microelectronics - The results of investigating the crystal structure, ionic conductivity, and local structure of the (ZrO2)1 –x(Gd2O3)x and (ZrO2)1 –x(Y2O3)x (x = 0.04, 0.08,...     

Energy-saving power regulation of AC electric locomotives with continuous temperature monitoring of the electrical equipment

The character of thermo-mechanical ageing caused by growing of internal heat resistance of powerful semi-conductor devices in transforming units has been clarified. The reasons of low reliability of electronic equipment of electric locomotive are found out. The way to increase its lifetime is suggested.     

Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures

Specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been studied. It is shown that there are differences between variations in the structural and electrical properties of the thin silicon layer and those in bulk silicon crystals (with similar electrical characteristics) subjected to the same radiation effect. It is established that the embedded insulator in the SOI structure represents a barrier for motion of radiation-induced intrinsic interstitial silicon atoms, which brings about an increase in the dose of bombarding ions, which leads to the loss of single-crystallinity of the silicon layer in a SOI structure. It is shown that γ-ray irradiation with doses unaffecting the electrical conductivity of bulk silicon crystals appreciably affects the conductivity of the silicon layer in the SOI structures. In addition, variation in the conductivity of silicon layer is related to variation in the density of surface states at the interface between the silicon layer and the built-in insulator, rather than to generation of conventional radiation-induced structural defects in silicon.     

Structure, Homogeneity and Properties of Thermoelectric Materials Based on Ternary Solid Solutions of Bismuth and Antimony Chalcogenides

Ternary solid solutions Bi_xSb_1-xTe and especially Bi₂Te_1-ySe_y grown by vertical zone melting have the tendency for dendrite liquation. It causes considerable chemical inhomogeneity of the material and multicomponent structure. The effect of long-term annealing at 380–400°C on microstructure, phase composition and properties of structural components has been studied. It was shown that proper growth regime provides ingots with oriented column structure and good texture, which maximizes thermoelectric properties along the growth axis.