Pioneering e-supply chain integration in semiconductor industry: a case study

Taiwan Semiconductor Manufacturing Company (TSMC) is the largest semiconductor foundry in the world. Advanced Semiconductor Engineering Inc. (ASE) is the world’s leader in semiconductor assembly and testing. From 1998 to 2004, the two companies completed electronic integration of 11 key business processes through the Internet. The result is a seamless interface between TSMC, ASE and their joint customers. They can now obtain accurate, timely information on their product status and respond appropriately when needed. While the direct economic benefits are estimated to be around US$ 10 million through productivity increase over a total investment of about US$ 2 million, the indirect benefits of this initiative could be on the order of US $100 million if the joint customers’ benefits are considered. In collaboration with the RosettaNet organization, TSMC and ASE leveraged their pioneering experiences to define three data exchange standards which can then be widely adopted in the semiconductor industry. This case study is a demonstration of how two leading companies in their respective fields can join forces to make a difference in creating value for the entire semiconductor industry, which in turn benefits society at large. With the momentum continuing to build and the sphere of influence continuing to expand, it is anticipated that TSMC, ASE and the entire sector will upgrade their competitiveness in terms of cost, quality, responsiveness and customer orientation.     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Processing, Microstructures, and Properties of Cr-Cr3Si, Nb-Nb3Si, and V-V3Si Eutectics

The present paper examines the potential of refractory metal-A15 silicide composites as structural materials for high temperature applications. Three eutectic systems are considered, Cr-Cr₃Si, Nb-Nb₃Si, and V-V3Si, since they all have melting points above 1700°C and densities lower than Ni-based superalloys. Eutectic compositions were selected because directional solidification of eutectics can be used to generate aligned composite microstructures. The present paper describes processing, microstructures and properties of directional ly solidified Cr-Cr₃Si, Nb-Nb₃Si, and V-V₃Si. Based on microstructural and chemical analyses, some phase diagram modifications are suggested. The orientation relationships between the refractory metal and A15-silicide phases were characterized using transmission electron microscopy. In the Cr-Cr₃Si eutectic a strong orientation relationship was observed; there was excellent lattice matching of the (110) in Cr and (210) in Cr₃Si. Room temperature and elevated temperature microhard-ness and fracture toughness are also reported; these indicate good strength retention in Nb-Nb₃Si at elevated temperatures.     

Recommendations for the prevention of coronary artery disease in Asians: a scientific statement of the International College of Nutrition

PURPOSE: Two types of glass wool were used to remove leukocytes in semen for evaluation of reactive oxygen species production by spermatozoa in oligozoospermic patients with leukocytospermia. METHODS: Semen samples were prepared using fine-structure glass wool (SpermFertil) and coarse-structure glass wool. In each treatment group, native semen was evaluated for sperm concentration, percentage motility, viability, leukocyte concentration, and production of reactive oxygen species. RESULTS: Electron microscopically, SpermFertil showed a higher number of leukocytes attached to the fibers compared to coarse-structure glass wool. Leukocytes in native semen and after glass wool filtration as determined by peroxidase cytochemistry confirmed this observation. Reactive oxygen species decreased from 45.303 counts/10(7) viable cells in native semen to 15.806 counts/10(7) cells in coarse structure wool and 7.465 counts/10(7) cells in Spermfertil, respectively. CONCLUSIONS: Removal of leukocytes from semen of oligozoospermic patients by means of glass wool filtration is a useful method to distinguish production of reactive oxygen species by leukocytes versus sperm cells.     

用热分析法研究硝化棉的熔化过程

用ＭＤＳＣ，显微镜温台熔点测定仪和固体原位反应池／快速扫描傅立叶变换红外光谱联用装置考察了硝化棉的熔化过程。ＭＤＳＣ曲线表明吸热过程是可逆的，它系由ＮＣ和部分分解凝聚相产物的混合物的固液相变所引起。由ＮＣ的ＭＤＳＣ曲线得到的熔点，熔化含，熔化熵，分解含和分解反应热温熵分别为４７６．８４Ｋ，２０５．６Ｊ．ｇ＾－１，０．４３１２Ｊ．ｇ＾－１．Ｋ＾－１，－２４７５．０Ｊ．ｇ＾－１，－５．２４２Ｊ．ｇ＾－     

Advanced thin-film silicon-on-sapphire technology: microwavecircuit applications

This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET's optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have f_t values of 25 GHz (14 GHz) and f_max values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET's to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications