首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   86740篇
  免费   7403篇
  国内免费   3719篇
电工技术   4954篇
技术理论   10篇
综合类   5519篇
化学工业   14570篇
金属工艺   4297篇
机械仪表   4947篇
建筑科学   6065篇
矿业工程   2311篇
能源动力   2876篇
轻工业   6157篇
水利工程   1521篇
石油天然气   3459篇
武器工业   687篇
无线电   11452篇
一般工业技术   10922篇
冶金工业   4902篇
原子能技术   1001篇
自动化技术   12212篇
  2024年   386篇
  2023年   1465篇
  2022年   2730篇
  2021年   3681篇
  2020年   2740篇
  2019年   2317篇
  2018年   2550篇
  2017年   2759篇
  2016年   2470篇
  2015年   3309篇
  2014年   4140篇
  2013年   5321篇
  2012年   5568篇
  2011年   5950篇
  2010年   5303篇
  2009年   5173篇
  2008年   5090篇
  2007年   4516篇
  2006年   4338篇
  2005年   3449篇
  2004年   2686篇
  2003年   2504篇
  2002年   2809篇
  2001年   2426篇
  2000年   1915篇
  1999年   1832篇
  1998年   1809篇
  1997年   1401篇
  1996年   1246篇
  1995年   981篇
  1994年   848篇
  1993年   646篇
  1992年   523篇
  1991年   419篇
  1990年   374篇
  1989年   330篇
  1988年   252篇
  1987年   211篇
  1986年   173篇
  1985年   159篇
  1984年   135篇
  1983年   92篇
  1982年   88篇
  1981年   72篇
  1980年   98篇
  1979年   56篇
  1978年   60篇
  1977年   59篇
  1976年   78篇
  1975年   44篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
11.
Two coupled-mode theories based on individual waveguide modes and compound system modes, respectively, are briefly reviewed with proper modification and new comments. The relation between these two theories is built and it is found that one theory is actually an efficient approximation of the other. Also, the reason why the results obtained with the first more accurate than those obtained with the second is found. The constraint on both approaches is shown  相似文献   
12.
袁颖曦 《模具制造》2007,7(12):79-81
列举了民营模具企业常见的几种泄密现象,并提出了防范措施。  相似文献   
13.
DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba1−x Ho x )TiO3 ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba1−x Ho x )TiO3 is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO3 by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.  相似文献   
14.
Four experiments of coagulation and flocculation were conducted to investigate the characteristics of colloidal silica removal in a high-tech industrial wastewater treatment plant for reclamation and reuse of the effluent. Experimental results illustrated that poly-aluminium chloride (PACl) showed higher performances on colloidal silica removal than alum. Interestingly, the two coagulants demonstrated the same capacity on silica removal. The specific silica removal capacity was approximately 0.135 mg SiO2/mg Al2O3 when the dosage of coagulants was in the range 30-150 mg/L Al2O3. In addition, the silica was reduced significantly at the condition of pH above 8. Experimental data implied that precipitation of aluminium flocs was the major mechanism for colloid silica removal in PACl and alum coagulation, besides, charge adsorption was also important for improving removal efficiency. Moreover, the addition of polyacrylic acid (PAA) as a flocculant could slightly advance silica removal in the PACl coagulation. The combined PACl/PAA/flocs coagulation was effective for the removal of colloidal silica, soluble COD, and turbidity and also suitable as a pretreatment unit in wastewater reclamation and reuse processes.  相似文献   
15.
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold  相似文献   
16.
A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (Tg) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry  相似文献   
17.
Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.  相似文献   
18.
Alumina-supported vanadium oxide, VOx/Al2O3, and binary vanadium–antimony oxides, VSbOx/Al2O3, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by SBET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO2 pulse methods. VSbOx/Al2O3 exhibited enhanced catalytic activity and especially on-stream stability compared to VOx/Al2O3 catalyst. Incorporation of antimony into VOx/Al2O3 increased dispersion of active VOx species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V0.43Sb0.57Ox/Al2O3 system.  相似文献   
19.
A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges  相似文献   
20.
This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号