A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

SnS₂ films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH₂CH₂CH₂CH₃)₄Sn] and carbon disulfide in n-hexane at the temperature range 180-200 °C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mössbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 μm, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm.     

Cr12MoV钢冷挤压成形模强化工艺的研究

针对Crl2MoV钢冷挤压成形模热处理存在的质量问题，对加热温度和方式进行了大量的试验研究，在此基础上，提出了改进的快速加热工艺。结果表明，经该工艺处理后，模具使用寿命得到显提高。     

横波速度各向异性初步探讨：—多波勘探资料的应用

在纵波、SH 型横波资料处理和解释过程中,我们发现四川 HBC 地区地下介质普遍存在方向各向异性。当横波通过方向各向异性介质时,分裂成两个波:一个波的偏振方向与裂缝平行,叫快横波;另一个波的偏振方向与裂缝走向垂直,叫慢横波。采用相应的观测和处理方法,便可获得快横波和慢横波剖面。根据同一界面的快、慢横波的旅行时可以求得各向异性系数。同样,还可以利用 SH 波与转换波的速度比求取各向异性系数。各向异性系数的大小,反映了裂缝的发育程度。如果野外作了 X、Y 分量观测,室内又作了坐标旋转处理,那么,就可以进一步确定裂缝带的方向。如果未作上述工作,也可以根据构造线走向,大致确定裂缝带的发育方向。     

Thermal decomposition and micropore formation in PEK,PEEK and PES

At strain rates greater than about 10 the deformation of polymers is an adiabatic process which can lead to the generation of very high localized temperatures. These may be well in excess of the temperatures required for thermal decomposition of the polymer to occur. It is speculated that gaseous products arising from such decomposition may act as the source of microcavities and craze initiators. Experiments are described in which the thermal decomposition reaction parameters of polyetherketone, polyetheretherketone, and polysulphone are measured using differential scanning calorimetry and thermogravimetric analysis, and the decomposition products analysed by mass spectrometry. The results indicate that the proposed mechanism could act as a source of micropores with total pore volumes amounting to several per cent of the material volume.     

An efficient network-switch scheduling for real-time applications

Bursts consist of a varying number of asynchronous transfer mode cells corresponding to a datagram. Here, we generalized weighted fair queueing to a burst-based algorithm with preemption. The new algorithm enhances the performance of the switch service for real-time applications, and it preserves the quality of service guarantees. We study this algorithm theoretically and via simulations.     

磷酸盐玻璃中Er~(3+)离子的光跃迁和激光作用

给出了Li-Al磷酸盐玻璃中Er~(3+)离子发射特性(Ar、σ_ρ、β、τ_γ)的计算结果。报道了Cr~(3+)→Yb~(3+)→Er~(3+)的一种有效能量转移,并获得了室温下3J1.54μm波长的激光输出。     

Co-evolution as a computational and cognitive model of design

Co-evolutionary design has been developed as a computational model that assumes two parallel search spaces: the problem space and the solution space. The design process iteratively searches each space using the other space as the basis for a fitness function when evaluating the alternatives. Co-evolutionary design can also be developed as a cognitive model of design by characterizing the way in which designers iteratively search for a design solution, making revisions to the problem specification. This paper presents the computational model of co-evolutionary design and then describes a protocol study of human designers looking for evidence of co-evolution of problem specifications and design solutions. The study shows that co-evolutionary design is a good cognitive model of design and highlights the similarities and differences between the computational model and the cognitive model. The results show that the two kinds of co-evolutionary design complement each other, having strengths in different aspects of the design process. Electronic Publication     

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application     

Microstructural investigation of the breakdown of the protective oxide scale on a 304 steel in the presence of oxygen and water vapour at 600 °C

This article focuses on the detailed microstructural investigation of the oxide scale formed on a 304 steel in the presence of oxygen and water vapour (40%) at 600 °C. The work has been carried out using a combination of microanalytical techniques including FIB, TEM, EDX and electron diffraction. The local breakdown of the initially protective oxide scale and the growth of island/crater oxide morphology are described. Special consideration is given to the influence of the microstructure of the steel and the oxide scale on the breakdown behaviour.