Corrosion Condition Evaluation at Muddy Creek Bridge

Corrosion rates were measured at the exposed spots of rebars near three corners of Muddy Creek Bridge located in northern West Virginia using a 3LP device. Also, chloride contents of the concrete samples taken from the vicinity of the spots were analyzed using a wet chemical method that had been developed in this study. The average corrosion rate over the three spots was 4.66 mA/m2, which is in the range of corrosion damage possible in 10–15 years. The average chloride content of the concrete over the three spots was 703 parts per million (ppm), which is well above the threshold limit value of 260 ppm. Although the corrosion rate measurement method using a 3LP device is by manual operation, it is found to be reliable and effective, and, thus, recommended for future studies of this kind of research. The wet chemical method developed in this study is found to be effective.     

Decreasing miscibility with greater heterogeneity in ternary polymer blend: poly(cyclohexyl methacrylate), poly(α‐methyl styrene) and poly(4‐methyl styrene)

A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (T_g) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry     

Grain size effects on the mechanical properties of some squeeze cast light alloys

Mechanical property-grain size relationships have been examined for squeeze cast Al-4.5% Cu alloy, for an aluminium alloy with a composition corresponding to wrought 7010, and for a magnesium alloy AZ91. The general trend of the results obtained showed that the tensile properties and the fatigue strength improved as grain size decreased and the reverse was found to be the case for the fatigue crack propagation resistance and fracture energy of these castings. However, the results also showed that no simple common relationship existed between grain size and the tensile properties of the different alloys. The results are discussed in respect of their microstructures.     

Mechanical alloying in the Al-Bi alloy system

Mechanical alloying (MA) was carried out to investigate the MA behaviour of the immiscible Al-10, 30 at % Bi alloys. After the MA processing, the Al and Bi were finely and homogeneously alloyed. The Bi crystallite size decreased to 25 nm and 30 nm in the Al-10 at % Bi and Al-30 at % Bi alloys, respectively. By increasing the MA time, the hardness increased up to a value of 80 H _v, which is larger than that obtained from the rule of mixtures. The lattice parameter of Bi decreased by about 0.27%, which shows the formation of a non-equilibrium hcp Bi super-saturated solid solution. The extended solubility of Al in Bi was 1.9% in the Al-30 at % Bi alloy. Due to the extended solubility, depression of the melting temperature of hcp Bi was confirmed in the mechanically alloyed Al-Bi alloys. The maximum depression in the temperature was about 10 K. The measured values corresponded well with those estimated from the extrapolation of the solidus line.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

The oxidative inducation test applied to medical PVC and other polymers

We have examined the applicability of this simple and effective test to polymer systems widely used in the medical industry. First, it was found that not every polymer examined exhibited a distinct onset of autocatalytic oxidation detectable by DSC. However, for cases where distinct onsets are found, powerful insights can be obtained. These included activation energy of the degradation, thermal oxidative shelf life prediction, and correlation, with product performances. Actual examples are presented to illustrate the utility of the test.     

Decision-directed maximum-likelihood estimation of OFDM framesynchronisation offset

The authors propose a method to estimate the synchronisation offset for orthogonal frequency division multiplexing (OFDM) frame alignment without resort to pilot tones. A decision-directed maximum-likelihood estimation of frame synchronisation offset is derived, and the performance of the proposed scheme is confirmed by computer simulation for QAM systems     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance