Dissolution behavior of Cu and Ag substrates in molten solders

This study investigated the dissolution behavior of Cu and Ag substrates in molten Sn, Sn-3.5Ag, Sn-4.0Ag-0.5Cu, Sn-8.6Zn and Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga lead-free solders as well as in Sn-37Pb solder for comparison at 300, 350, and 400°C. Results show that Sn-Zn alloys have a substantially lower dissolution rate of both Cu and Ag substrates than the other solders. Differences in interfacial intermetallic compounds formed during reaction and the morphology of these compounds strongly affected the substrate dissolution behavior. Soldering temperature and the corresponding solubility limit of the substrate elements in the liquid solder also played important roles in the interfacial morphology and dissolution rate of substrate.     

Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[d,d']thieno[3,2‐b;4,5‐b']dithiophene (P‐BTDT) : 2‐(4‐n‐octylphenyl)benzo[d,d ']thieno[3,2‐b;4,5‐b']dithiophene (OP‐BTDT)] and C₆₀. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm² V^?1 s^?1. An optimized blending of P‐BTDT:OP‐BTDT with the n‐channel semiconductor, C₆₀, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm² V^?1 s^?1, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.     

An Integrated Assessment of the Impacts of Hydrogen Economy on Transportation, Energy Use, and Air Emissions

This paper presents an analysis of the potential system-wide energy and air emissions implications of hydrogen fuel cell vehicle (H ₂-FCV) penetration into the U.S. light duty vehicle (LDV) fleet. The analysis uses the U.S. EPA MARKet ALlocation (MARKAL) technology database and model to simultaneously consider competition among alternative technologies and fuels, with a focus on the transportation and the electric sectors. Our modeled reference case suggests that economics alone would not yield H₂-FCV penetration by 2030. A parametric sensitivity analysis shows that H₂-FCV can become economically viable through reductions in H ₂-FCV costs, increases in the costs of competing vehicle technologies, and increases in oil prices. Alternative scenarios leading to H₂-FCV penetration are shown to result in very different patterns of total system energy usage depending on the conditions driving H₂-FCV penetration. Overall, the model suggests that total CO₂ emissions changes are complex, but that CO₂ emission levels tend to decrease slightly with H₂-FCV penetration. While carbon capture and sequestration technologies with H ₂ production and renewable technologies for H₂ production have the potential to achieve greater CO₂ reductions, these technologies are not economically competitive within our modeling time frame without additional drivers     

Solution‐Processed High‐Performance Tetrathienothiophene‐Based Small Molecular Blends for Ambipolar Charge Transport

Four soluble dialkylated tetrathienoacene ( TTAR) ‐based small molecular semiconductors featuring the combination of a TTAR central core, π‐conjugated spacers comprising bithiophene ( bT ) or thiophene ( T ), and with/without cyanoacrylate ( CA ) end‐capping moieties are synthesized and characterized. The molecule DbT‐TTAR exhibits a promising hole mobility up to 0.36 cm² V^?1 s^?1 due to the enhanced crystallinity of the microribbon‐like films. Binary blends of the p‐type DbT‐TTAR and the n‐type dicyanomethylene substituted dithienothiophene‐quinoid ( DTTQ‐11 ) are investigated in terms of film morphology, microstructure, and organic field‐effect transistor (OFET) performance. The data indicate that as the DbT‐TTAR content in the blend film increases, the charge transport characteristics vary from unipolar (electron‐only) to ambipolar and then back to unipolar (hole‐only). With a 1:1 weight ratio of DbT‐TTAR DTTQ‐11 in the blend, well‐defined pathways for both charge carriers are achieved and resulted in ambipolar transport with high hole and electron mobilities of 0.83 and 0.37 cm² V^?1 s^?1, respectively. This study provides a viable way for tuning microstructure and charge carrier transport in small molecules and their blends to achieve high‐performance solution‐processable OFETs.     

Top-down logic design with pass-transistor cells and efficientsynthesiser

A pass-transistor based cell library containing only two types of cells is designed and a corresponding logic/circuit synthesiser developed for logic mapping of any combinational circuit. The proposed design has better performance than the recently proposed lean integration with pass transistors (LEAP) cell library. Furthermore, the modified LEAP cell library can be easily migrated to a new process technology due to the smaller number of cells     

Numerical simulation for thin wall injection molding of fiber-reinforced thermoplastics

The thickness of product is less than 1mm and product compares flowing length to thickness (flow length ratio L/t) to be living above 150 of injection molding filling. This situation is called thin wall injection molding. This study uses MoldFlow software for material (PP), different processing parameters (injection time, melt temperature, mold temperature, injection pressure), various fiber (glass, long glass), different fiber ratio (40%, 50%) and different thickness (1mm, 0.9mm) to simulate the result on notebook computer. The result shows that the mold temperature is the important factor on processing. The mold temperature, melt temperature and injection pressure of thin wall injection molding are higher than convectional injection molding.     

Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 /spl mu/m

Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 /spl mu/m were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A/cm/sup 2/ for the 1.378 and 1.41 /spl mu/m emitting lasers, respectively. The significant improvement of device performance is believed due to utilisation of high temperature annealing and introduction of GaAsN barriers to suppress the resulting wavelength blue shift. A comparable characteristic temperature coefficient of the external differential quantum efficiency, T/sub 1/, is observed for the InGaAsN-GaAsN QW laser compared to similar InGaAsN/GaAs structures.     

A 60-GHz 38-pJ/bit 3.5-Gb/s 90-nm CMOS OOK Digital Radio

A 60-GHz fully integrated bits-in bits-out on–off keying (OOK) digital radio has been designed in a standard 90-nm CMOS process technology. The transmitter provides 2 dBm of output power at a 3.5-Gb/s data rate while consuming 156 mW of dc power, including the on-chip 60-GHz frequency synthesizer. A pulse-shaping filter has been integrated to support high data rates while maintaining spectral efficiency. The receiver performs direct-conversion noncoherent demodulation at data rates up to 3.5 Gb/s while consuming 108 mW of dc power, for a total average transceiver energy consumption of 38 pJ/bit in time division duplex operation. To the best of the authors' knowledge, this is the lowest energy per bit reported to date in the 60-GHz band for fully integrated single-chip CMOS OOK radios.      

Effect of extrinsic impedance and parasitic capacitance on figure of merit of RF MOSFET

This paper investigates the impact of source/drain impedance, gate-to-bulk capacitance, and gate resistance on device properties from 0 to 50 GHz for 0.13-/spl mu/m MOSFETs. Better device characteristics (g/sub m/ and C/sub gg/) can be found on MOSFETs with lower metal (or source/drain) resistance. But the best frequency characteristics (f/sub T/ and f/sub max/) occurred on MOSFETs with medium metal (or source/drain) resistance due to the increased interconnection capacitances. For radio frequency MOSFETs with finger-gate structure, better high-frequency behavior occurred on devices with medium finger-gate width W/sub f/ because of the tradeoff between gate (or source/drain) resistance and parasitic capacitance.     

A union bound on the error probability of binary codes over block-fading channels

Block-fading is a popular channel model that approximates the behavior of different wireless communication systems. In this paper, a union bound on the error probability of binary-coded systems over block-fading channels is proposed. The bound is based on uniform interleaving of the coded sequence prior to transmission over the channel. The distribution of error bits over the fading blocks is computed. For a specific distribution pattern, the pairwise error probability is derived. Block-fading channels modeled as Rician and Nakagami distributions are studied. We consider coherent receivers with perfect and imperfect channel side information (SI) as well as noncoherent receivers employing square-law combining. Throughout the paper, imperfect SI is obtained using pilot-aided estimation. A lower bound on the performance of iterative receivers that perform joint decoding and channel estimation is obtained assuming the receiver knows the correct data and uses them as pilots. From this, the tradeoff between channel diversity and channel estimation is investigated and the optimal channel memory is approximated analytically. Furthermore, the optimal energy allocation for pilot signals is found for different channel memory lengths.